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1、纳米压印及其相关技术纳米压印及其相关技术王旭迪 付绍军Contact author: Dr. Xudi Wang Hefei University of Technology Hefei, 230009 Email:xudi_ Tel:1395516200405/10/2004Title2Outline 介绍介绍 纳米压印(NIL)技术 NIL应用 Roll-to-roll NIL其他纳米加工技术 结束语05/10/2004Title3微纳米加工技术的起源05/10/2004Title4微纳米加工的基本形式05/10/2004Title5微纳米加工技术的发展历史05/10/2004Title6
2、纳米加工的定义纳米加工的定义Sub-100nm scale (or sub-m)Making 1D, 2D and 2.5D nanostructuresExcluding synthesis of nanoparticles or CNTsLeading to functional devices05/10/2004Title7Nanofabrication vs. NanomanufacturingScientific research orientedOne-off or a few-off devicesThroughput, uniformity and quality contro
3、l are less of issuesReliability and repeatability are importantLess concern of economical return纳米加工的定义纳米加工的定义05/10/2004Title8微米加工与纳米加工05/10/2004Title9各种纳米加工技术的比较各种纳米加工技术的比较05/10/2004Title10Modern optical lithography systems05/10/2004Title11Extreme UV LithographyAdvantages Extreme UV is 10-14nm wave
4、length source Resolution approaching 30nm High Throughput Disadvantages Mask fabrication is difficult Reflective optics can be expensive CaF2instead of SiO2 optics Cost of EUV startup 50-60 million* Masks can cost up $88K*05/10/2004Title12Principle of optical lithography05/10/2004Title13集成电路纳米加工技术05
5、/10/2004Title14纳米尺度的光学曝光技术纳米尺度的光学曝光技术05/10/2004Title15纳米尺度的电子束曝光技术纳米尺度的电子束曝光技术Advantages Very accurate control of pattern with direct writing No mask needed Highly automated 5nm resolution possibleDisadvantages Very low throughput Less than 10 wafers per hour Expensive (Hardware cost 6-10 Million05/
6、10/2004Title16纳米尺度的电子束曝光技术纳米尺度的电子束曝光技术05/10/2004Title17纳米尺度的聚焦离子束技术a)b)05/10/2004Title18扫描探针纳米加工技术电子流导致曝光、表面融化/氧化、机械划痕、直接转移05/10/2004Title19Dip-Pen lithography探针作为蘸水笔，在针尖蘸上特殊墨水，利用表面张力将墨水写在衬底05/10/2004Title20Outline 介绍 纳米压印纳米压印(NIL)技术技术 NIL应用 Roll-to-roll NIL其他纳米加工技术 结束语05/10/2004Title21 预先图案化的印章使聚 合
7、物材料变形而在聚合物上 形成结构图案过程 分辨率达到1nm以下的 水平，具有高分辨率、高产 量、低成本的优点 下一代32nm节点光刻的 代表技术 已经应用于硬盘和闪存 生产 应用于了各种纳电子器 件、光学器件、存储器、纳 米流体通道、生物芯片等功 能结构各种纳米压印技术-Resolution depends on stamps -Need an extra etching step -Best for periodical patterns05/10/2004Title22NIL History and milestones1982 Introduction of the CD in Euro
8、pe and Japan, fabricated by hot embossing process 1996 Imprint as a nanolithography technique by S. Chou at Princeton 1997 Imprinting of sub 10 nm structures via hot embossing, S. Chou 1999 First publication of UV based nanoimprint (UV-NIL) by the Aachengroup, Prof Kurz(MNE99 conference) 1998 Format
9、ion of the first research consortiums over the area of NIL 2000 First publication of step and flash imprint lithography (SFIL) by Texas University, Prof. Wilson (3 beam conference 02)First report of MOSFET with 100 nm line gates by imprint lithography from Nakamura in Japan 2001First 3D pattern, T g
10、ates by imprint lithography by S. Chou and Y. Chen 2003Imprint lithography was added onto the International Technology Road map for Semiconductors: 32 nm technology coming in 2009 but volume production by 201305/10/2004Title23NIL tools05/10/2004Title24NIL toolsNanoimprinter2.5 Obducat ltd in SwedenI
11、MPRIO 100 Molecular Imprints IncTemperature: room T up to 250 oC pressure: 2 100 bar Maximum wafer size: 65 mm resolution: 20 nm uniformity: 10 nm computing programmableResolution:Sub-50 nmAlignment: Tfflow stateNIL Resist05/10/2004Title59T=90Pressure: 2 MPa Template: h=280nm, W=150 nm05010015020025
12、03005060708090100 Temperature (Degree Centigrade)Imprinted depth (nm)quartzPressing downNIL Resist05/10/2004Title60Why not PDMS Itself?NIL Resist-self release05/10/2004Title61NIL Resist-self release05/10/2004Title62Excellent Mold Release with CopolymersNIL Resist-self releaseProvides excellent mold-
13、releasing properties and the ability to produce high-resolution features with sufficient aspect ratios05/10/2004Title63NIL Resist-self releaseImprinting of PS-PDMS Block Copolymerthermally crosslinked within 10 s05/10/2004Title64Silsesquioxane Resin for Nanoimprint 70 nm line width patternNIL Resist
14、-self release05/10/2004Title65Sub-100 nm line width structures in PDMSNIL Resist-self release05/10/2004Title66NIL Resist-self releaseLow viscosity of the UV curable liquid enables easy patterning of large and nanoscale patterns at low pressure20 um patterns60 nanometer trenches05/10/2004Title67UV cu
15、rable liquid resist bead up on bare Si after spin-coating due to dewettingSmooth and uniform UV curable resist film on PMMA under-coatingLiquid Film Dewetting and PreventionNIL Resist-self release05/10/2004Title68NIL Resist-self release05/10/2004Title69Physical Properties suitable for NILNIL Resist-
16、self release05/10/2004Title70Outline 介绍 纳米压印(NIL)技术 NIL应用应用 Roll-to-roll NIL其他纳米加工技术 结束语05/10/2004Title71 Data storage Broadband AR coating for LCD display motheye biometic (65C) clogs the channels High post-exposure baking temperature causes expansion of air trapped inside the sealed channels Air bubblesCloggingBallooning常见问题紫外压印紫外压印- -热键合制作热键合制作SUSU- -8 8胶纳流体
