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1、济南大学毕业论文- I -摘 要为了研究种子层对 Bi3.15Nd0.85Ti3O12（BNT0.85）铁电薄膜结构和性能的影响，本论文采用溶胶- 凝胶法(Sol-Gel)在 Pt/Ti/SiO2/Si 衬底上制备了不同厚度、不同预处理温度、不同退火温度和保温时间条件下的种子层薄膜。XRD 图显示，不同的实验条件显著地影响着 BNT0.85 薄膜的结晶状况，且在每层涂膜厚度为 70nm、预处理温度为 425的制备工艺条件下，分别在退火温度为 560保温时间为 180s 和退火温度为 550保温时间为 300s 的条件下，制备出了 BNT0.85 薄膜。通过测试薄膜的铁电性能可以看出，退火温度为
2、 560保温时间为 180s 条件下所得薄膜铁电性能较好，并且，随着应用电压的增大，BNT0.85 薄膜的剩余极化 Pr 和电滞回线的矩形度逐渐增加。通过测试两种薄膜的压电性能，同样是退火温度为 560保温时间为180s 条件下所得薄膜压电性能较好，该条件下 BNT0.85 薄膜半峰宽较小，峰-峰值较大 ，在正负电压下表现出几乎相同的压电响应，具有极好的一致性。因此，最终确定在每层涂膜厚度为 70nm、预处理温度为 425 、退火温度为 560及保温时间为 180s 的制备工艺条件下，获得了 a 轴取向择优度最高、铁电性能和压电性能更好的 BNT0.85 的薄膜。关键词：种子层；Bi 3.15
3、Nd0.85Ti3O12 薄膜；溶胶-凝胶法； 电滞回线；压电响应济南大学毕业论文- II -ABSTRACTIn this paper ,in order to explore the effect of seeding layer on the structure and properties of Bi3.15Nd0.85Ti3O12 (BNT0.85) ferroelectric thin films, we deposited the seeding layer on Pt/Ti/SiO2/Si substrates using sol-gel method at different
4、 thickness, pretreatment temperatures, annealing temperatures and heat preservation time. XRD patterns show that different experimental conditions have an important effect on the crystallization of BNT0.85 films, and in the condition of each layer thickness of 70nm and pretreatment temperature of 42
5、5 , BNT0.85 ferroelectric thin films were prepared at annealing temperatures of 560 for 180s and 550 for 300s, respectively. The analysis of ferroelectric properties shows that, the ferroelectric properties of BNT0.85 films prepared at annealing temperatures of 560 for 180s are better, and their val
6、ues of the remanent polarization (Pr) and the rectangular of the hysteresis loop improve with the increase of the voltage applied. The analysis of piezoelectric properties shows that, the piezoelectric properties of BNT0.85 films prepared at annealing temperatures of 560 for 180s are also better, th
7、eir full width at half maximum (FWHM) of the peak is smaller, the peak-to-peak distance is larger, and they have almost the same piezoresponse under positive and negative voltages and excellent uniformity. Therefore, BNT0.85 ferroelectric thin films which were prepared in the condition of each layer
8、 thickness of 70nm and pretreatment temperature of 425 at annealing temperatures of 560 for 180s are highest predominantly (100)-oriented films with better ferroelectric and piezoelectric properties.Key words：seeding layer；Bi 3.15Nd0.85Ti3O12film；Sol-Gel；hysteresis loop ；piezoresponse 济南大学毕业论文- III
9、-目 录摘 要 .IABSTRACT .II1 前言 .11.1 铁电材料及其基本特性 .11.1.1 铁电材料 .11.1.2 铁电材料的特性 .21.2 钙钛矿型铁电材料晶体结构 .41.2.1 简单钙钛矿结构(perovskite) .51.2.2 Bi 系层状钙钛矿结构（Bi-layered perovskite structure） .51.3 国内外研究现状及存在问题 .61.4 研究目的、意义及主要内容 .81.4.1 研究目的与意义 .81.4.2 研究的主要内容 .82 实验原理与测试方法 .92.1 薄膜制备技术 .92.1.1 射频磁控溅射法 .92.1.2 脉冲激光沉积法 .92.1.3 金属有机分解法 .102.1.4 溶胶-凝胶法 .102.1.5 化学气相沉积法 .112.2 分析测试技术 .112.2.1 X-射线衍射分析 .122.2.2 电学性能测试技术 .123 实验方案设计与方法 .
