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1、Chapter 4 Metal Oxide-Semiconductor Field Effect TransistorsChapter 4 Metal Oxide-Semiconductor Field Effect TransistorsFundamental of Semiconductor DevicesFundamental of Semiconductor Devices第四章第四章 MOSMOS 场效应晶体管场效应晶体管Metal Oxide Semiconductor Metal Oxide Semiconductor Field Effect TransistorsField
2、Effect TransistorsChapter 4 Metal Oxide-Semiconductor Field Effect TransistorsChapter 4 Metal Oxide-Semiconductor Field Effect TransistorsFundamental of Semiconductor DevicesFundamental of Semiconductor Devices场效应晶体管，利用改变垂直于导电沟道的电场控制沟道的导电能力，并实现放大作用Chapter 4 Metal Oxide-Semiconductor Field Effect Tra
3、nsistorsChapter 4 Metal Oxide-Semiconductor Field Effect TransistorsFundamental of Semiconductor DevicesFundamental of Semiconductor Devices场效应晶体管的工作电流 由导体中单种多数载流子 输运，因此又称为单极型晶体管单极型晶体管( ( UnipolarUnipolar Transistor Transistor) )Chapter 4 Metal Oxide-Semiconductor Field Effect TransistorsChapter 4 M
4、etal Oxide-Semiconductor Field Effect TransistorsFundamental of Semiconductor DevicesFundamental of Semiconductor Devices按结构及工艺特点场效应 晶体管一般可分成三类： 第一类是表面场效应管， 通常采取绝缘栅的形式， 称为绝缘栅场效应管 ( IGFET )。 Chapter 4 Metal Oxide-Semiconductor Field Effect TransistorsChapter 4 Metal Oxide-Semiconductor Field Effect T
5、ransistorsFundamental of Semiconductor DevicesFundamental of Semiconductor Devices若半导体衬底与金属栅间 的绝缘介质层是 Si02 ，即 “ 金属-氧化物-半导体 ” ( MOS ) 场效应晶体管， 它是最重要的一种绝缘栅 场效应晶体管；Chapter 4 Metal Oxide-Semiconductor Field Effect TransistorsChapter 4 Metal Oxide-Semiconductor Field Effect TransistorsFundamental of Semic
6、onductor DevicesFundamental of Semiconductor Devices第二类是结型场效应管 ( JFET )，一种采用 pn 结势垒控制器件导电能力的场效应晶体管; Chapter 4 Metal Oxide-Semiconductor Field Effect TransistorsChapter 4 Metal Oxide-Semiconductor Field Effect TransistorsFundamental of Semiconductor DevicesFundamental of Semiconductor DevicesN 型 衬底 P
7、型栅区 P 型栅区 栅极 栅极 源 极 漏 极 耗尽区耗尽区Chapter 4 Metal Oxide-Semiconductor Field Effect TransistorsChapter 4 Metal Oxide-Semiconductor Field Effect TransistorsFundamental of Semiconductor DevicesFundamental of Semiconductor Devices第三类是薄膜场效应晶体 管( TFT )，结构及原理与 IGFET 相似。TFT 采用蒸发 工艺将半导体、绝缘体和 金属薄膜蒸发在绝缘衬底 上构成的场效应晶
8、体管。Chapter 4 Metal Oxide-Semiconductor Field Effect TransistorsChapter 4 Metal Oxide-Semiconductor Field Effect TransistorsFundamental of Semiconductor DevicesFundamental of Semiconductor Devices现在中国本土一线电视厂商 几乎均已涉足液晶模组制造 一时间薄膜晶体管液晶显示 模组 ( TFT-LCM ) 制造业引 起了人们前所未有的关注。 Chapter 4 Metal Oxide-Semiconduct
9、or Field Effect TransistorsChapter 4 Metal Oxide-Semiconductor Field Effect TransistorsFundamental of Semiconductor DevicesFundamental of Semiconductor DevicesChapter 4 Metal Oxide-Semiconductor Field Effect TransistorsChapter 4 Metal Oxide-Semiconductor Field Effect TransistorsFundamental of Semico
10、nductor DevicesFundamental of Semiconductor Devices效应晶体管与双极型晶体 管相比有下述优点： (1) 输入阻抗高达10 9一10 15 (2) 噪声系数小Chapter 4 Metal Oxide-Semiconductor Field Effect TransistorsChapter 4 Metal Oxide-Semiconductor Field Effect TransistorsFundamental of Semiconductor DevicesFundamental of Semiconductor Devices(3) 功
11、耗小可制造高集 成度半导体的集成电路；(4) 温度稳定性好 多子 器件，电学参数不随温度 变化；(5) 抗辐射能力强等。Chapter 4 Metal Oxide-Semiconductor Field Effect TransistorsChapter 4 Metal Oxide-Semiconductor Field Effect TransistorsFundamental of Semiconductor DevicesFundamental of Semiconductor DevicesMOS MOS 场效应晶体管的场效应晶体管的 结构结构 Structure of MOSFETStructure of MOSFETMOS 场效应管的衬底材料 可以是 n 型半导体也可以 是 p 型半导体。Chapter 4 Metal Oxide-Semiconductor Field Effect TransistorsChapter 4 Metal Oxide-Semiconductor Field Effect TransistorsFundamental of Semiconductor DevicesFundamental of Semiconductor Devicesp 型衬底制成的器件， 漏 - 源区是 n 型，称 n 沟 MOS 场
