B,Nov,2011 JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors S9013 TRANSISTOR (NPN) FEATURES ? High Collector Current. ? Complementary to S9012. ? Excellent hFE Linearity. MARKING: J3 MAXIMUM RATINGS (Ta=25℃ ℃ unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage 40 V VCEO Collector-Emitter Voltage 25 V VEBO Emitter-Base Voltage 5 V IC Collector Current 500 mA PC Collector Power Dissipation 300 mW RΘJA Thermal Resistance From Junction To Ambient416 ℃/W Tj Junction Temperature 150 ℃ Tstg Storage Temperature -55～+150℃ ELECTRICAL CHARACTERISTICS (Ta=25℃℃ unless otherwise specified) Parameter Symbol Test conditions Min Typ Max Unit Collector-base breakdown voltage V(BR)CBO IC=0.1mA, IE=0 40 V Collector-emitter breakdown voltage V(BR)CEO IC=1mA, IB=0 25 V Emitter-base breakdown voltage V(BR)EBO IE=0.1mA, IC=0 5 V Collector cut-off current ICBO VCB=40V, IE=0 0.1 uA Collector cut-off current ICEO VCE=20V, IB=0 0.1 uA Emitter cut-off current IEBO VEB=5V, IC=0 0.1 uA hFE(1) VCE=1V, IC=50mA 120 400 DC current gain hFE(2) VCE=1V, IC=500mA 40 Collector-emitter saturation voltage VCE(sat) IC=500mA, IB=50mA 0.6 V Base-emitter saturation voltage VBE(sat) IC=500mA, IB=50mA 1.2 V Base-emitter voltage VBE VCB=1V,IC=10mA, 0.7 V Transition frequency fT VCE=6V,IC=20mA, f=30MHz 150 MHz Collector output capacitance Cob VCB=6V, IE=0, f=1MHz 8 pF CLASSIFICATION OF hFE(1) RANK L H J RANGE 120-200 200-350 300-400 SOT––23 1. BASE 2. EMITTER 3. COLLECTOR 【南京南山半导体有限公司 — 长电贴片三极管选型资料【南京南山半导体有限公司 — 长电贴片三极管选型资料】】 110100 10 100 1000 110100 10 100 0.1110 1 100 10 100 1000 0255075100125150 0 100 200 300 400 0.00.20.40.60.81.0 0.1 1 10 100 110100 0.0 0.4 0.8 1.2 048121620 0 20 40 60 80 100 fT ——IC hFE —— COMMON EMITTER VCE=1V 330500 Ta=100℃ Ta=25℃ DC CURRENT GAIN hFE COLLECTOR CURRENT IC (mA) IC 30 300 303 COLLECTOR-EMITTER SATURATION VOLTAGE VCEsat (mV) COLLECTOR CURRENT IC (mA) β=10 Ta=25℃ Ta=100℃ ICVCEsat —— 500 500 100 30 10 3 30.320 Cob Cib REVERSE VOLTAGE V (V) f=1MHz IE=0/ IC=0 Ta=25℃ VCB/ VEBCob/ Cib —— CAPACITANCE C (pF) 300 1030 VCE=6V Ta=25℃ TRANSITION FREQUENCY fT (MHz) COLLECTOR CURRENT IC (mA) S9013Typical Characterisitics COLLECTOR POWER DISSIPATION PC (mW) AMBIENT TEMPERATURE Ta ()℃ PC —— Ta VBEIC —— 30 3 0.3 Ta=25℃ Ta=100℃ COMMON EMITTER VCE=1V COLLECTOR CURRENT IC (mA) BASE-EMMITER VOLTAGE VBE (V) 30 3 β=10 BASE-EMITTER SATURATION VOLTAGE VBEsat (V) COLLECTOR CURRENT IC (mA) Ta=25℃ Ta=100℃ 500 ICVBEsat —— Static Characteristic COLLECTOR CURRENT IC (mA) COLLECTOR-EMITTER VOLTAGE VCE (V) 400uA 350uA 300uA 250uA 200uA 150uA 100uA IB=50uA COMMON EMITTER Ta=25℃ B,Nov,2011 Min.Max.Min.Max. A0.9001.1500.0350.045 A10.0000.1000.0000.004 A20.9001.0500.0350.041 b0.3000.5000.0120.020 c0.0800.1500.0030.006 D2.8003.0000.1100.118 E1.2001.4000.0470.055 E12.2502.5500.0890.100 e e11.8002.0000.0710.079 L L10.3000.5000.0120.020 θ0°8°0°8° 0.550 REF.0.022 REF. Symbol Dimensions In InchesDimensions In Millimeters 0.950 TYP.0.037 TYP. 【南京南山半导体有限公司 — 长电三极管选型资料【南京南山半导体有限公司 — 长电三极管选型资料】】 The bottom gasket The top gasket 3000×1 PCS 3000×15 PCS Label on the Reel Label on the Inner Box Label on the Outer Box QA Label Seal the box with the tape Seal the box with the tape Stamp “EMPTY” on the empty box Inner Box: 210 mm× 208 mm×203 mmOuter Box: 440 mm× 440 mm× 230 mm 。