《pmos管技术资料ao3401》由会员分享，可在线阅读，更多相关《pmos管技术资料ao3401（6页珍藏版）》请在金锄头文库上搜索。
1、Symbol VDS VGS IDM TJ, TSTG SymbolTypMax 6590 85125 RJL4360 Junction and Storage Temperature Range A PD C 1.4 1 -55 to 150 TA=70C ID -4.2 -3.5 -30Pulsed Drain Current B Power Dissipation A TA=25C Continuous Drain Current A MaximumUnitsParameter TA=25C TA=70C Absolute Maximum Ratings TA=25C unless ot
2、herwise noted V V12Gate-Source Voltage Drain-Source Voltage-30 C/W Maximum Junction-to-Ambient A Steady-State C/W W Maximum Junction-to-Lead CSteady-StateC/W Thermal Characteristics ParameterUnits Maximum Junction-to-Ambient A t 10s RJA AO3401 P-Channel Enhancement Mode Field Effect Transistor July
3、2001 Features VDS (V) = -30V ID = -4.2 A RDS(ON) 50m (VGS = -10V) RDS(ON) 65m (VGS = -4.5V) RDS(ON) 120m (VGS = -2.5V) General Description The AO3401 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable
4、 for use as a load switch or in PWM applications. S G D TO-236 (SOT-23) Top View G D S Alpha & Omega Semiconductor, Ltd. AO3401 SymbolMinTypMaxUnits BVDSS-30V -1 TJ=55C-5 IGSS100nA VGS(th)-0.7-1-1.3V ID(ON)-25A 4250 TJ=125C75 5365 m 80120 m gFS711S VSD-0.75-1V IS-2.2A Ciss954pF Coss115pF Crss77pF Rg
5、6 Qg9.4nC Qgs2nC Qgd3nC tD(on)6.3ns tr3.2ns tD(off)38.2ns tf12ns trr20.2 ns Qrr11.2nC Body Diode Reverse Recovery Time Body Diode Reverse Recovery ChargeIF=-4A, dI/dt=100A/s Drain-Source Breakdown Voltage On state drain current ID=-250A, VGS=0V VGS=-2.5V, ID=-1A VGS=-4.5V, VDS=-5V VGS=-10V, ID=-4.2A
6、 Reverse Transfer Capacitance Electrical Characteristics (TJ=25C unless otherwise noted) STATIC PARAMETERS ParameterConditions IDSSA Gate Threshold VoltageVDS=VGS ID=-250A VDS=-24V, VGS=0V VDS=0V, VGS=12V Zero Gate Voltage Drain Current Gate-Body leakage current RDS(ON)Static Drain-Source On-Resista
7、nce Forward Transconductance Diode Forward Voltage m VGS=-4.5V, ID=-4A IS=-1A,VGS=0V VDS=-5V, ID=-5A IF=-4A, dI/dt=100A/s VGS=0V, VDS=-15V, f=1MHz SWITCHING PARAMETERS Total Gate Charge VGS=-4.5V, VDS=-15V, ID=-4A Gate Source Charge Gate Drain Charge Turn-On Rise Time Turn-Off DelayTime VGS=-10V, VD
8、S=-15V, RL=3.6, RGEN=6 Gate resistanceVGS=0V, VDS=0V, f=1MHz Turn-Off Fall Time Maximum Body-Diode Continuous Current Input Capacitance Output Capacitance Turn-On DelayTime DYNAMIC PARAMETERS A: The value of R JA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still ai
9、r environment with T A =25C. The value in any a given application depends on the users specific board design. The current rating is based on the t 10s thermal resistance rating. B: Repetitive rating, pulse width limited by junction temperature. C. The R JA is the sum of the thermal impedence from ju
10、nction to lead R JL and lead to ambient. D. The static characteristics in Figures 1 to 6,12,14 are obtained using 80 s pulses, duty cycle 0.5% max. E. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25C. The SOA curve provi
11、des a single pulse rating. Alpha & Omega Semiconductor, Ltd. AO3401 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 0.00 5.00 10.00 15.00 20.00 25.00 0.001.002.003.004.005.00 -VDS (Volts) Fig 1: On-Region Characteristics -ID (A) VGS=-2V -2.5V -3V -4.5V -10V 0 2 4 6 8 10 00.511.522.53 -VGS(Volts) Figu
12、re 2: Transfer Characteristics -ID(A) 20 40 60 80 100 120 0.002.004.006.008.0010.00 -ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage RDS(ON) (m ) 1.0E-06 1.0E-05 1.0E-04 1.0E-03 1.0E-02 1.0E-01 1.0E+00 1.0E+01 0.00.20.40.60.81.01.2 -VSD (Volts) Figure 6: Body-Diode Characteristics
13、-IS (A) 25C 125C 0.8 1 1.2 1.4 1.6 1.8 0255075100125150175 Temperature (C) Figure 4: On-Resistance vs. Junction Temperature Normalized On-Resistance VGS=-2.5V ID=-3.5A, VGS=-10V ID=-3.5A, VGS=-4.5V 10 30 50 70 90 110 130 150 170 190 0246810 -VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltag
14、e RDS(ON) (m ) 25C 125C VDS=-5V VGS=-2.5V VGS=-4.5V VGS=-10V ID=-2A 25C 125C ID=-1A Alpha and Omega Semiconductor, Ltd. AO3401 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 0 1 2 3 4 5 024681012 -Qg (nC) Figure 7: Gate-Charge Characteristics -VGS (Volts) 0 200 400 600 800 1000 1200 1400 05101520253
15、0 -VDS (Volts) Figure 8: Capacitance Characteristics Capacitance (pF) Ciss 0 10 20 30 40 0.0010.010.11101001000 Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-to- Ambient (Note E) Power (W) 0.01 0.1 1 10 0.000010.00010.0010.010.11101001000 Pulse Width (s) Figure 11: Normalized Maximum
16、 Transient Thermal Impedance Z JA Normalized Transient Thermal Resistance CossCrss 0.1 1.0 10.0 100.0 0.1110100 -VDS (Volts) -ID (Amps) Figure 9: Maximum Forward Biased Safe Operating Area (Note E) 100s 10ms 1ms 0.1s 1s 10s DC RDS(ON) limited TJ(Max)=150C TA=25C VDS=-15V ID=-4A Single Pulse D=Ton/T TJ,PK=TA+PDM.ZJA.RJA RJA=90C/W Ton T PD In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse TJ(Max)=150C TA=25C 1
