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1、 JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors MMBT5401 TRANSISTOR (PNP) FEATURES Complementary to MMBT5551 Ideal for Medium Power Amplification and Switching MARKING: 2L MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit VCBO Colle
2、ctor-Base Voltage -160 V VCEO Collector-Emitter Voltage -150 V VEBO Emitter-Base Voltage -5 V IC Collector Current -0.6 A PC Collector Power Dissipation 0.3 W RJA Thermal Resistance from Junction to Ambient 416 /W Tj Junction Temperature 150 Tstg Storage Temperature -55+150 ELECTRICAL CHARACTERISTIC
3、S (Ta=25 unless otherwise specified) Parameter Symbol Test conditions Min Typ MaxUnit Collector-base breakdown voltage V(BR)CBO IC=-100A, IE=0 -160 V Collector-emitter breakdown voltage V(BR)CEO* IC=-1mA, IB=0 -150 V Emitter-base breakdown voltage V(BR)EBO IE=-10A, IC=0 -5 V Collector cut-off curren
4、t ICBO VCB=-120V, IE=0 -0.1 A Emitter cut-off current IEBO VEB=-4V, IC=0 -0.1 A hFE(1) * VCE=-5V, IC=-1mA 80 hFE(2) * VCE=-5V, IC=-10mA 100 300 DC current gain hFE(3) * VCE=-5V, IC=-50mA 50 VCE(sat)1* IC=-10mA, IB=-1mA -0.2 V Collector-emitter saturation voltage VCE(sat)2* IC=-50mA, IB=-5mA -0.5 V V
5、BE(sat)1* IC=-10mA, IB=-1mA -1 V Base-emitter saturation voltage VBE(sat)2* IC=-50mA, IB=-5mA -1 V Transition frequency fT VCE=-5V,IC=-10mA, f=30MHz 100 MHz *Pulse test: pulse width 300s, duty cycle 2.0%. CLASSIFICATION OF hFE (2) RANK L H RANGE 100-200 200-300 SOT23 1. BASE 2. EMITTER 3. COLLECTOR
6、C,Nov,2012 【南京南山半导体有限公司 长电贴片三极管选型资料【南京南山半导体有限公司 长电贴片三极管选型资料】 -0.1-1-10-100 -0.0 -0.2 -0.4 -0.6 -0.8 -1.0 -0.0-0.2-0.4-0.6-0.8-1.0 -0.1 -1 -10 -100 -1-10 1 10 100 -1-10-100 0 50 100 150 200 250 300 0255075100125150 0.0 0.1 0.2 0.3 0.4 -0-3-6-9 -0 -2 -4 -6 -8 -10 -12 -14 -16 -18 -20 -0.1-1-10-100 -0.
7、01 -0.1 -1 -0-5-10-15-20-25-30 0 50 100 150 200 250 300 -600 COLLECTOR CURRENT IC (mA) BASE-EMITTER SATURATION VOLTAGE VBEsat (V) Ta=25 Ta=100 =10 ICVBEsat -600 VCE=-5V Ta=25 Ta=100 oC BASE-EMITTER VOLTAGE VBE(V) COLLECTOR CURRENT IC (mA) VBE IC -0.5 f=1MHz IE=0 / IC=0 Ta=25 oC Cob Cib VCB / VEBCob
8、/ Cib REVERSE VOLTAGE V (V) CAPACITANCE C (pF) DC CURRENT GAIN hFE COLLECTOR CURRENT IC (mA) Ta=25 oC Ta=100 oC VCE=-5V IChFE -600 COLLECTOR POWER DISSIPATION Pc (W) AMBIENT TEMPERATURE Ta () Pc Ta COMMON EMITTER Ta=25 COLLECTOR CURRENT IC (mA) COLLECTOR-EMITTER VOLTAGE VCE (V) -20uA -30uA -40uA -90
9、uA -80uA -50uA -100uA -70uA -60uA IB=-10uA Static Characteristic MMBT5401Typical Characteristics Ta=25 Ta=100 =10 COLLECTOR CURRENT IC (mA) COLLECTOR-EMITTER SATURATION VOLTAGE VCEsat (V) VCEsat IC VCE=-5V Ta=25 oC COLLECTOR CURRENT IC (mA) TRANSITION FREQUENCY fT (MHz) ICfT C,Nov,2012 Min.Max.Min.M
10、ax. A0.9001.1500.0350.045 A10.0000.1000.0000.004 A20.9001.0500.0350.041 b0.3000.5000.0120.020 c0.0800.1500.0030.006 D2.8003.0000.1100.118 E1.2001.4000.0470.055 E12.2502.5500.0890.100 e e11.8002.0000.0710.079 L L10.3000.5000.0120.020 0808 0.550 REF.0.022 REF. Symbol Dimensions In InchesDimensions In
11、Millimeters 0.950 TYP.0.037 TYP. 【南京南山半导体有限公司 长电三极管选型资料【南京南山半导体有限公司 长电三极管选型资料】 The bottom gasket The top gasket 30001 PCS 300015 PCS Label on the Reel Label on the Inner Box Label on the Outer Box QA Label Seal the box with the tape Seal the box with the tape Stamp “EMPTY” on the empty box Inner Box: 210 mm 208 mm203 mmOuter Box: 440 mm 440 mm 230 mm
