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1、MOSFET TEST METHODOLOGIES,Basic Test Parameters,DVDS- Delta Drain to Source Forward Voltage,UIL- Unclamped Inductive Load,BVDSS- Drain to Source Breakdown Voltage,IDSS- Drain to Source Leakage Current,IGSS- Gate to Source Leakage Current,Vgsth- Gate to Source Threshold Voltage,VSD- Drain to Source F
2、orward Voltage,RDSon- Drain to Source On-Resistance,Note: Click on the parameter to view detailed explanation,DVDS,- Delta Drain to Source Voltage,DVDS = VSD1 VSD2,- It is determined by testing VSD1 first.,Click to go back to Main Page,- Heat up the unit by putting a gate bias and a certain drain cu
3、rrent (Id) for a few milliseconds.,- Lastly, test VSD2. The difference between VSD1 and VSD2 is the DVDS value.,UIL,Click to go back to Main Page,EAV = 0.5L * Id2 EAV Avalanche Energy (Joule) L - Inductive Load ( Henry ) ID - Peak Drain Current ( Ampere ),High Speed Switch,Vdd,Free-wheeling diode,Hi
4、gh Slew Rate Voltage Driver,Vgs INPUT,Id,0A,0V,V+,Peak Id,Current Sense Meter,UIL,Click to go back to Main Page,High Voltage/Current Source Voltmeter/Ammeter,High Slew Rate Voltage Driver,DUT,Pulse Detector,L,Blocking Diode,EAV = 0.5L * Id2 EAV Avalanche Energy (Joule) L - Inductive Load ( Henry ) I
5、D - Peak Drain Current ( Ampere ),BVDSS,- Breakdown Voltage between Drain to Source with Gate shorted to Source.,- Properly designed and manufactured MOSFETs mostly have close Bvdss readings when measured either by 10uA, 50uA and 250uA forcing.,- It is determined by forcing a specified current from
6、drain to souce and measuring the resulting voltage.,Click to go back to Main Page,IDSS,- The zero gate voltage Drain-Source Current or off-state Drain Leakage current.,- Drain to Source forcing voltage is normally at 80% of its breakdown voltage.,- It is determined by applying specified voltage from
7、 Drain to Source with Gate shorted to Source and measuring the resulting current.,Click to go back to Main Page,IGSS,- The Gate to Body(Source) Leakage current. .,- Due to input capacitance however, large diesize Mosfets may prove difficult to measure with automatic test equipment, some testers requ
8、ire a larger test time to charge the gate capacitance prior to test.,- It is measured with Drain and Source at Ground and gate biased to a specified voltage.,Click to go back to Main Page,Vgs(th),- Threshold Voltage between Gate and source.,- For ease of measuring, the drain is commonly shorted to t
9、he gate. Threshold current is normally measured at 250uA (Industry practice),- It is defined as the voltage from gate to source required to cause the Mosfet to Conduct with a specified Id current.,Click to go back to Main Page,Rds(on),- Drain-Source On resistance with specified Id and Vgs forcing.,-
10、 Components are device channel resistance, epi-res, backmetal res, pkg res,Rds(on) = Vds / Id,Click to go back to Main Page,Total resistance in each cell,- It is determined by forcing a fixed drain current and gate to source voltage. The drain to source voltage drop is then measured and divided by the drain current to get the RDSon value.,VSD,- Body diode forward Current Conduction with Is (source current) as forcing Current (Vgs is set to zero).,Click to go back to Main Page,
