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1、IRFBC30 N - CHANNEL 600V - 1.8 - 3.6A - TO-220 PowerMESH MOSFET ITYPICAL RDS(on)= 1.8 IEXTREMELYHIGH dv/dt CAPABILITY I100%AVALANCHE TESTED IVERYLOW INTRINSIC CAPACITANCES IGATECHARGE MINIMIZED DESCRIPTION The PowerMESH is the evolution of the first generation of MESH OVERLAY . The layout refinement
2、sintroducedgreatlyimprovethe Ron*area figure of merit while keeping the device at the leading edge for what concerns switching speed,gate charge and ruggedness. APPLICATIONS IHIGH CURRENT, HIGH SPEED SWITCHING ISWITH MODE POWER SUPPLIES(SMPS) IDC-AC CONVERTERS FOR WELDING EQUIPMENTAND UNINTERRUPTIBL
3、E POWERSUPPLIES AND MOTOR DRIVER INTERNAL SCHEMATIC DIAGRAM January 2000 ABSOLUTE MAXIMUM RATINGS SymbolParameterValueUnit VDSDrain-source Voltage (VGS= 0)600V VDGRDrain- gate Voltage (RGS= 20 k)600V VGSGate-source Voltage 20V IDDrain Current (continuous) at Tc= 25 oC 3.6A IDDrain Current (continuou
4、s) at Tc= 100 oC 2.3A IDM()Drain Current (pulsed)14A PtotTotal Dissipation at Tc= 25 oC 75W Derating Factor0.6W/oC dv/dt(1)Peak Diode Recovery voltage slope3V/ns TstgStorage Temperature-65 to 150 oC TjMax. Operating Junction Temperature150 oC () Pulse width limited by safe operating area(1) ISD3.6 A
5、,di/dt 60 A/s, VDD V(BR)DSS, Tj TJMAX TYPEVDSSRDS(on)ID IRFBC30600 V ID(on)x RDS(on)max VGS= 10 V 3.6A DYNAMIC SymbolParameterTest ConditionsMin.Typ.Max.Unit gfs()Forward Transconductance VDS ID(on)x RDS(on)maxID= 2.2 A2.5S Ciss Coss Crss Input Capacitance Output Capacitance Reverse Transfer Capacit
6、ance VDS= 25 Vf = 1 MHzVGS= 0475 72 10 pF pF pF IRFBC30 2/8 元器件交易网w w w . c e c b 2 b . c o m ELECTRICAL CHARACTERISTICS (continued) SWITCHING ON SymbolParameterTest ConditionsMin.Typ.Max.Unit td(on) tr Turn-on Time Rise Time VDD= 250 VID= 2.5 A RG= 4.7 VGS= 10 V (see test circuit, figure 3) 14 14 n
7、s ns Qg Qgs Qgd Total Gate Charge Gate-Source Charge Gate-Drain Charge VDD= 480 VID= 3.6 A VGS= 10 V16.5 2.5 9 23.1nC nC nC SWITCHING OFF SymbolParameterTest ConditionsMin.Typ.Max.Unit tr(Voff) tf tc Off-voltage Rise Time Fall Time Cross-over Time VDD= 480 VID= 3.6 A RG= 4.7 VGS= 10 V (see test circ
8、uit, figure 5) 15 19 24 ns ns ns SOURCE DRAINDIODE SymbolParameterTest ConditionsMin.Typ.Max.Unit ISD ISDM() Source-drain Current Source-drain Current (pulsed) 3.6 14 A A VSD()Forward On VoltageISD= 3.6AVGS= 01.6V trr Qrr IRRM Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current IS
9、D= 5 Adi/dt = 100 A/s VDD= 100 VTj= 150 oC (see test circuit, figure 5) 600 2.8 9 ns C A () Pulsed: Pulse duration = 300 s, duty cycle 1.5 % () Pulse width limited by safe operating area SafeOperating AreaThermal Impedance IRFBC30 3/8 元器件交易网w w w . c e c b 2 b . c o m OutputCharacteristics Transcond
10、uctance Gate Chargevs Gate-sourceVoltage Transfer Characteristics Static Drain-source On Resistance CapacitanceVariations IRFBC30 4/8 元器件交易网w w w . c e c b 2 b . c o m Normalized Gate ThresholdVoltage vs Temperature Source-drainDiode Forward Characteristics Normalized On Resistance vs Temperature IR
11、FBC30 5/8 元器件交易网w w w . c e c b 2 b . c o m Fig. 1: UnclampedInductive Load TestCircuit Fig. 3: Switching Times Test Circuits For ResistiveLoad Fig. 1: UnclampedInductive Waveform Fig. 4: Gate Chargetest Circuit Fig. 5: Test Circuit For InductiveLoad Switching And Diode Recovery Times IRFBC30 6/8 元器
12、件交易网w w w . c e c b 2 b . c o m DIM. mminch MIN.TYP.MAX.MIN.TYP.MAX. A4.404.600.1730.181 C1.231.320.0480.051 D2.402.720.0940.107 D11.270.050 E0.490.700.0190.027 F0.610.880.0240.034 F11.141.700.0440.067 F21.141.700.0440.067 G4.955.150.1940.203 G12.42.70.0940.106 H210.010.400.3930.409 L216.40.645 L413
13、.014.00.5110.551 L52.652.950.1040.116 L615.2515.750.6000.620 L76.26.60.2440.260 L93.53.930.1370.154 DIA.3.753.850.1470.151 L6 A C D E D1 F G L7 L2 Dia. F1 L5 L4 H2 L9 F2 G1 TO-220 MECHANICAL DATA P011C IRFBC30 7/8 元器件交易网w w w . c e c b 2 b . c o m Information furnished is believedtobeaccurateand rel
14、iable.However, STMicroelect ronics assumes no responsibilityforthe consequences of use of such information nor for any infringement of patents or other rights of third part ies which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMic
15、roelectro nics. Specificationmentioned in this publicationare subjecttochange without notice. This publication supersedes and replaces all informat ion previouslysupplied.STMicroelectronicsproducts are not authorized for use as critical components in life support devices or systemswith out express w
16、ritten approval of STMicroelectronics. The ST logo is a trademark of STMicroelectronics 1999 STMicroelectronics Printed in Italy All Rights Reserved STMicroelectronics GROUP OF COMPANIES Australia - Brazil - China- Finland - France - Germany - Hong Kong - India - Italy - Japa n - Malaysia - Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - U.S.A. http:/ . IRFBC30 8/8 元器件交易网w w w . c e c b 2 b . c o m
