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1、 Semiconductive Devices1, Semiconductive diode 1), StructuresSpot contactPNFace contactPNSymbol：2),I-V characteristicsUIStartup Voltage: Si:0.6V,Ge:0.2V。Operating Voltage:Si:0.60.7V, Ge:0.20.3V 。Reverse saturated Voltage :UBR3) Some parameters A) maximal operating current: IOMB) Reverse saturated Vo
2、ltage :UBRC) Reverse Current: IRD) Differential resistance rDiDuDIDUDQiDuDD) Capacitance in diodeIncluding：Barrier Capacitance CB and Diffusion Capacitance CD。CB ：Produced by the change of space charge under the variational voltage。CD ：Produced by the change of the minority carrier under the variati
3、onal voltage。P+-NrdRLuiuouiuottApplication example 1：Half-wave rectifierApplication example 2 ：tttuiuRuoRRLuiuRuo4) Some special diodes A) Zener diodeB) Photoelectrical diodeI ULight IntensityIncreased C) Light-emitting diode2, Semiconductive dynatron(Bipolar Junction Transistor)1) StructureBE(Emitt
4、er)C(Collector)NNP(Base)NPNP NPBCEPNPCurrent amplificatory multipleNote: BE junction under forward bias and CB junction under reverse bias. B(Base)E(emitter)C(collector)IBIEICNPNBECIBIEICPNP2) I-V CurveICmAAVVUCEUBERBIBECEBInput characteristicsUCE 1VIB(A)UBE(V)204060800.40.8Operating Voltage ： Si:UB
5、E0.60.7V, Ge:UBE0.20.3V 。UCE=0VUCE =0.5Vdead zone voltage Si 0.5V，Ge 0.2V。Output characteristics IC(mA )1234UCE(V)36912IB=020A40A60A80A100AIC=IBIC(mA )1234UCE(V)36912IB=020A40A60A80A100AUCEUBE, ，IBIC，UCE0.3VIC(mA )1234UCE(V)36912IB=020A40A60A80A100AIB=0,IC=ICEO, UBE0, UCE 0, UCE 0;UCEUBE ， IBIC，UCE0.3V (3) Blocked Zone： UBE00IDUGSVTN channel exhausted output characteristicsIDU DS0UGS=0UGS03,Thin film transistor(TFT)1) StructureGInsulation layerSemiconductive layerSDOFET的重要参数的工作曲线 （IV曲线）开关比迁移率
