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1、I摘 要基准电压源是模拟电路设计中广泛采用的一个关键的基本模块。所谓基准电压源就是能提供高稳定度基准量的电源，这种基准源与电源、工艺参数和温度的关系很小，但是它的温度稳定性以及抗噪性能影响着整个电路系统的精度和性能。本文的目的便是设计一种基于 CMOS 带隙基准电压源。本文首先介绍了基准电压源的国内外发展现状及趋势。然后详细介绍了MOS 器件的基本原理、基准电压源电路原理，并对不同的带隙基准源结构进行了比较。在带隙基准电压基准电路设计中，首先对所采用的 h05mixddst02v13库中的阈值电压、沟道长度调制系数、跨导参数进行提取，对衬底 pnp 管的温度特性进行分析，再对电路中的各个管子的
2、宽长比、电容、电阻值进行手动计算，最后通过 Hspice 软件对电路进行仿真验证。模拟和仿真结果表明，电路实现了良好的温度特性，0100温度范围内，基准电压温度系数大约为 0.25mV/，输出电压为 1.0V。关键词：MOS 器件；带隙基准电压源；参数提取；温度系数；输出电压； IIAbstractThe reference voltage source is a vital basic module is widely used in analog circuit design. The reference voltage source is able to provide high sta
3、bility reference amount of power, the reference source and power supply, process parameters and the temperature is very small, but its temperature stability and anti-noise performance affects the precision and performance of the whole system. The purpose of this paper is the design of a CMOS bandgap
4、 voltage reference based on.This paper first introduces the present situation and development trend of voltage reference at home and abroad. And then introduces the basic principle of MOS device, reference voltage source circuit principle, and the bandgap structure were compared with different. In t
5、he bandgap voltage reference circuit design, first on the threshold voltage, the h05mixddst02v13 Library of the channel length modulation coefficient, transconductance parameter extraction, analysis of temperature characteristics of a substrate of PNP pipe, the pipe of each circuit in the ratio of w
6、idth to length, capacitance, resistance value for manual calculation, finally the circuit was simulated by Hspice software.Simulation results show that, circuit has good temperature performance, 0 100 temperature range, the temperature coefficient of the reference voltage is about 0.25mV/ , the outp
7、ut voltage is 1.0V.Keywords: MOS device; bandgap voltage reference; extraction; output voltage temperature coefficient;III目录0 前言 .11 MOS 器件原理 .31.1 基本概念 .31.1.1 MOSFET 的结构 .31.2 MOS 的 I/V 特性 .41.2.1 阈值电压 .41.3 二级效应 .51.3.1 体效应 .51.3.2 沟道长度调制 .61.3.3 亚阈值导电性 .61.3.4 电压限制 .72 基准电压源电路原理 .82.1 基准电压源的结构 .82.1.1 直接采用电阻和管分压的基准电压源 .82.1.2 有源器件与电阻串联组成的基准电压源 .92.1.3 带隙基准电压源 .112.2 带隙基准电压源的基本原理 .112.2.1 与绝对温度成正比的电压 .122.2.2 负温度系数电压 VBE .132.3 带隙基准源的几种结构 .142.3.1 widlar 带隙基准源 .142.3.2 Brokaw 带隙基准源 .152.3.3 使用横向 BJT 的 CMOS 带隙基准源 .153 基准电压源电路设计 .173.1 基准源的整体结构 .173.2 参数提取 .173.2.1 MOS 管阈值电压的提取 .
