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1、5G Revolution From Semiconductor Technology, Device Model and Wafer-level Measurement Perspective MA Long EEsof EDA long_ Jan. 18th , 2017 Page Agenda Technologies for 5G Application On-wafer Measurements and Modeling Challenges Device Modeling Solutions Summary 是德科技南京 5G前沿技术论坛 2 Page Teardown of iP
2、hone 7 是德科技南京 5G前沿技术论坛 3 Mainstream Technologies Associated with 4G Smartphone SOC Baseband PA RF Switches RF Transceiver FinFET CMOS RFSOI GaAs HBT Page GaAs Mature technology with excellent performance 4-6 inch, pHEMT and HBT process Complete RF solution including PAs, LNAs, VCO, etc. Advantages i
3、n high-frequency response, linearity, and efficiency Limitation in breakdown voltage and power by narrow bandgap material 是德科技南京 5G前沿技术论坛 4 Page SOI RFSOI on high resistivity (HR) SOI wafer Substrates that favor low RF loss and high RF linearity Good for RF switch application due to linearity, inser
4、tion loss and isolation Low cost solutions comparing GaAs FDSOI with ultra-thin buried oxide and ultra-thin body Ideal solution for IoT by balancing performance and cost 是德科技南京 5G前沿技术论坛 5 Page LDMOS for RF Cellular Infrastructure Dominant RF power device technology for cellular infrastructure. Silic
5、on bipolar transistor, providing superior linearity, efficiency, gain and lower cost packaging options. 是德科技南京 5G前沿技术论坛 6 Page 5G Requirements and Trends General needs for wireless communication Connected, high speed data rate, and longer battery lifetime More chips are needed in 5G era More integra
6、tion High frequency High power and efficiency Emerging technologies toward to 5G Higher integrations Silicon based Higher freq and performance III-V devices 是德科技南京 5G前沿技术论坛 7 Page CMOS Commercialized 60 GHz Wi-Fi Limitations Linearity Power efficiency Low breakdown voltage Always be the desired tech
7、nology considering its integration and low cost 是德科技南京 5G前沿技术论坛 8 Page SiGe BiCMOS State of the art 130nm process with Fmax up to 340GHz Comparable RF gain, noise, and linearity performance to GaAs in millimeter wave frequency, while with lower cost and higher integration Applications in 77GHz autom
8、otive radar mmWave phased-array/active antenna Opportunities in the RF front end of 5G smartphones 是德科技南京 5G前沿技术论坛 9 Ruker et al, SiRF 2012 Page GaN Wide bandgap, high electron mobility and saturation velocity, high breakdown voltage, high power density and high gain at microwave frequencies. Gradua
9、lly replace LDMOS for 5G base stations in higher frequency Envelope tracking in base stations requires the high speed, high power, and high voltages GaN provides higher efficiency and 5x power density of the LDMOS transistors commonly used today. Technologies GaN on SiC higher preformation GaN on Si
10、licon lower cost 是德科技南京 5G前沿技术论坛 10 Page Comparison of Different Materials/Technologies 是德科技南京 5G前沿技术论坛 11 Johnsons FOM = vsat*Ebr/2p. Data from /www.ioffe.ru/SVA/NSM M a t e ri a lEg(e V )mn(c m2/ V s )Vs a t(1 07c m / s )Ebr(M V / c m ) J F O Mx/ J F O MSiD i a m o n d 5 . 5 1900 2 . 0 5 . 6 47n -
11、G a N 3 . 4 1500 2 . 5 3 . 0 31n -Si C 3 . 3 300 2 . 0 2 . 2 18n -I n P 1 . 4 4500 1 . 0 0 . 5 2 . 1n -G a A s 1 . 4 5000 0 . 8 0 . 4 1 . 3n -Si 1 . 1 1300 0 . 8 0 . 3 1 . 0In0 . 5 3Ga0 . 4 7As 0 . 8 11000 0 . 8 0 . 2 0 . 7n -G e 0 . 7 3900 0 . 6 0 . 2 0 . 5SHINOHARA et al.: SCALING OF GaN HEMTs AND
12、 SCHOTTKY DIODES IEEE TRANSACTIONS ON ELECTRON DEVICES, VOL. 60, NO. 10, OCT2013 Page Agenda Technologies for 5G Application On-wafer Measurements and Modeling Challenges Device Modeling Solutions Summary 是德科技南京 5G前沿技术论坛 12 Page Challenges in On-wafer Measurements Testkey design and consideration. M
13、ore parasitic effects are involved. Calibration methods SOLT, LRRM, TRL, LRM, and hybrid Choices of probe type, pitch, etc. De-embedding More complex equivalent network More steps and dummies, are needed HF noise and large signal measurements 是德科技南京 5G前沿技术论坛 13 Page Challenges in Device Modeling PDK
14、 provided by a foundry is not necessary supported to the mm-wave frequency band. Multiple technologies are involved. New devices with new effects to cover, e.g. Gate Lag and Drain Lag observed in GaAs and GaN HEMTs Much severer PVT variations in mm-wave frequency Parasitic modeling (res and cap) Com
15、pleteness of the model, to include noise, breakdown, temperatures, etc. 是德科技南京 5G前沿技术论坛 14 Page Drain Lag Degradation of drain current caused by increase of the drain voltage of the quiescent point, usually referred to as “current collapse” or “knee walkout” 是德科技南京 5G前沿技术论坛 15 -0.2, 4 Vds (V) Id (mA) Pulsed I-V Measurements with Two Different Quiescent Points -0.8, 6 “knee walkout” Quiescent Bias Point Id (mA) Vds (V) Page Agenda Technologies for 5G Application On-wafer Measurements and Modeling Challenges Device Modeling Solutions Summa
