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1、 One-Dimensional Fluorescent Silicon Nanorods Featuring Ultrahigh Photostability, Favorable Biocompatibility, and Excitation Wavelength-Dependent Emission Spectra 一维荧光硅纳米棒 具有超高的光稳定性、良好的生物相容性，和激发波长依赖性的 特性 讲课人：西北大学 1Journal of the American Chemical Society 大纲： u前言 u摘要 uSiNRs的制备 uSiNRs的表征及应用 u总结与反思 2Jo
2、urnal of the American Chemical Society 前言 文章出处：Song B, Zhong Y, Wu S, et al. One-Dimensional Fluorescent Silicon Nanorods Featuring Ultrahigh Photostability, Favorable Biocompatibility, and Excitation Wavelength-Dependent Emission SpectraJ. Journal of the American Chemical Society, 2016, 138(14): 48
3、24-4831. 光致化学发光：光致发光是指物体依赖外界光源进行照射 ，从而获得能量，产生激发导致发光的现象，它大致经过 吸收、能量传递及光发射三个主要阶段，光的吸收及发射 都发生于能级之间的跃迁，都经过激发态。而能量传递则 是由于激发态的运动。紫外辐射、可见光及红外辐射均可 引起光致发光。如磷光与荧光。 3Journal of the American Chemical Society 摘要 u这篇文章主要报道了一种长度可调的硅纳米棒（silicon nanorods，SiNRs）的制备，表征，证明此材料具有较高的 荧光量子产率、可忽略的生物毒性（negligible toxicity）、
4、激发波长依赖性的光致发光（excitation wavelength-dependent photoluminescence）、荧光稳定性（photostable），在多色 生物成像、LED灯的色彩转换器等方面有较大的应用潜力。 4Journal of the American Chemical Society 硅纳米棒（SiNRs）的制备 Figure 1. (a) Schematic illustration of microwave synthesis of SiNRs. The whole growth process is composed of three typical step
5、s: micelle fusion and crystal nucleation (Step1), crystal growth and aggregation (Step 2), and different growth rate in longitudinal direction (Step 3). 5 Figure 1.(bi) TEM and HRTEM images of SiNRs with different lengths: (b, f) 250 nm; (c, g) 180 nm; (d, h) 140 nm; and (e, (i) 100 nm at different
6、milk concentrations ranging from 1 to 4 mg/mL. Insets in (be) represent corresponding length distribution analysis (histograms) determined by TEM and DLS spectra(blue curves). 6 硅纳米棒（SiNRs）的表征 Figure 2. (a) XRD patterns of the four types of SiNRs samples. The diffraction peaks are analyzed by XRD so
7、ftware (PCPDFWIN). The standard diffraction lines of cubic silicon and hydroxyapatite are also shown for comparison. (b) FTIR spectra of the SiNRs, exhibiting obvious absorption peaks at 4004000 cm1. 7 硅纳米棒（SiNRs）的表征 Figure 3. (ad) Si 2p region of the high-resolution XP spectra of SiNRs with differe
8、nt lengths. Fitting is shown for the Si 2p3/2 component. The Si 2p1/2 components have omitted for clarity. 8 硅纳米棒（SiNRs）的表征 Figure 4. (a) PL (excitation (ex) = 420 nm) spectra and (b) absorption spectra of the SiNRs with different length. (c) Photographs of SiNRs with different lengths under ambient
9、 light (I), 365 nm irradiation (II),400 nm irradiation (II), and 450 nm irradiation (IV). 9 硅纳米棒（SiNRs）的表征 Figure 5. (ae) TEM images of the SiNRs obtained at different reaction times (0, 10, 20, 40, 60 min) with a milk concentration of 3 mg/mL(reaction temperature: 150 C). (fj) Photographs of the Si
10、NRs aqueous solution under 365, 400, and 450 nm irradiation; (ko) corresponding fluorescence spectra under serial excitation wavelengths from 400 to 510 nm. 10 硅纳米棒（SiNRs）的表征 Figure 6. (a) Cell viability of HeLa cells treated with the SiNRs (the SiNRs with length of 140 nm (determined by TEM) are em
11、ployed as a model)for different incubation times. The viability of the control cells was considered 100%. (b) Morphology of cells incubated with SiNRs of different concentrations (0.125, 0.25, 0.5, 1, 2 mg/mL) for 0.5, 3, 6, 12, 24, and 48 h. Multicolor confocal images of (c) HeLa cells and (d) C. e
12、legans treated by the SiNRs. Their corresponding bright-field images are shown in (c (I) and (d (I), respectively. The images of (c (II), d (II) are collected in the ranges of 430480 nm at ex = 405 nm; the images of (c (III), d (III) are collected in the ranges of 470550 nm at ex = 458 nm; the image
13、s of(c (IV), d (IV) are collected in the ranges of 560620 nm at ex = 514 nm with laser-scanning confocal microscope, respectively. 11 硅纳米棒（SiNRs）的表征 Figure 7. (a) The as-prepared aqueous samples of SiNRs with different length retain nearly identical fluorescent intensity during 100 days of storage.
14、(b)Photostability comparison of aqueous solutions of FITC, CdTe QDs, CdSe/ZnS QDs, and four different aspect ratio SiNRs under continuous UV irradiation (450 W xenon lamp) for serial times. (ch) Photographs of aqueous solutions of FITC, CdTe QDs,CdSe/ZnS QDs, and SiNRs under continuous UV irradiatio
15、n (450 Wxenon lamp) for serial times. 12 硅纳米棒（SiNRs）的表征 Figure 8. (a) Photographs of the blue LED operated at 5 mA current. (b) Schematic diagram of the SiNRs-based white LED (1) blue LED chips (emission peak at 420 nm); (2) mixed SiNR-silicone composites). (c) As-prepared SiNRs-based white LED (SiN
16、Rs- LED) operated at 10 mA current. (d) The color coordination of the spectrum under various currents (the red circle) on the CIE 1931 color space. 13 文章思路 14 1.明确研究SiNRs的研究意义 2.制备SiNRs 3.对材料的形貌表征成分表征分析激发波长依耐性表征分析 毒性表征分析光学稳定分析在LED中的应用表征分析 4. 结论 总结与反思 创新点 1. 方法创新：该文献中制备硅纳米棒的方法是相对简单的一锅法，并 且能够很好地控制纳米棒的长度轴向生长。 2. 应用创新：一般的材料制备很少能实现应用的多元化，该文献中的 一维SiNRs不仅可以实现在体内体外多色生物成像方面的应用，而且 还首次实现其在白色LED灯方面的应用。 15 总结与反思 反思： 1. 这篇文章里边方法上简单易行，
