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1、Haga clic para modificar el estilo de texto del patrnSi sensor developmentsat CNMManuel LozanoILC Meeting. Santander, January 2008Si sensor development at CNM Manuel LozanoRadiation detector grouppStarted in 1996pMain activities:nRadiation detector developmentnRadiation effects in materials, devices
2、 and circuitsnPackagingnMedical imagingp11 people pMore researchers at CNM from other department joining radiation detector activitiesnCircuit designnDevice developmentnSimulationILC Meeting. Santander, January 2008Si sensor development at CNM Manuel LozanoCNM Clean Room expansionpFrom 1000 to 1500
3、m2pNew are for nanotechnologypNew set of equipment relevant for advanced packagingnWafer grindernCMPnWafer alignment and bonding systemIFCAILC Meeting. Santander, January 2008Si sensor development at CNM Manuel LozanoIR transparent detectorspDevelopment of strip detectors transparent to IR for direc
4、t alignmentpIn collaboration with IFCApNew process run for material characterization already startedpDetectors manufactured this yearIFCAILC Meeting. Santander, January 2008Si sensor development at CNM Manuel Lozano3D technologypDue to the low field problem of Single Sided 3D detectors, CNM decided
5、to develop a two-side 3D technology.pIn collaboration with Glasgow University that are doing the simulationspNew mask set designedpTechnology developedpFirst wafers already finished, only N-type, good results.p2nd and 3rd process runs started, N-type and P-typepVery interesting for LHC pixels, very
6、high radiation hardness. Useful for LC?ILC Meeting. Santander, January 2008Si sensor development at CNM Manuel Lozano3D technologypSchematic technology cross sectionILC Meeting. Santander, January 2008Si sensor development at CNM Manuel LozanoMedipix2 pixel configurationPolysilicon contactOpening in
7、 the passivationP-type HoleMetalILC Meeting. Santander, January 2008Si sensor development at CNM Manuel LozanoHoles filled with poly and dopedHoles: 240um deepDoped polysilicon at the bottom of the holeILC Meeting. Santander, January 2008Si sensor development at CNM Manuel LozanoSEM images of top pa
8、rt of holesPolysilicon layerColumnar electrodeMetal trackPolysilicon contactILC Meeting. Santander, January 2008Si sensor development at CNM Manuel LozanoALIBAVA: A readout system for microstrip silicon sensorspJoint development of Liverpool Univ., IFIC-Valencia and CNM-BarcelonapNeed of a simple an
9、d cheap system for detector charge collection performance characterizationpDifficulty for obtaining this type of measurements:nRequired equipment is expensivenA large number of channels has to be monitored nMany different approaches: NIM, CAMAC, VME or custom electronic modulepTesting with an electr
10、onic system as similar as possible to those used at LHC experiments:nLHC front end readout chip should be usedpAnalog readout is preferred for pulse shape reconstructionILC Meeting. Santander, January 2008Si sensor development at CNM Manuel LozanoSystem characteristicspThe system is compact and port
11、able.pTwo triggering options:nExternal trigger input from one or two photomultipliers (radioactive source).nSynchronized external trigger output for pulsing an external excitation source (laser system).pUses one or two front-end readout chips (Beetle, LHCb) to acquire the detector signalspCommunicat
12、es with a PC via USB, pThe system is controlled from a PC application in communication with a FPGA which interpret and execute the orders.pIt has its own power supply system, from AC mains (not HV).Motherboard prototypeprototypeTest box” (DB + fanins + detector)ILC Meeting. Santander, January 2008Si
13、 sensor development at CNM Manuel LozanoEdgeless detectorspRIE cut trenches reduces inactive detector area due to guard ringsnWith trenches and saw cut, we estimate inactive are in the order of 100 mnUsing Current Terminating Ring (CTR) to collect current, as small as 25 mpImportant for detector til
14、ingILC Meeting. Santander, January 2008Si sensor development at CNM Manuel LozanoPackaging PossibilitiespIn collaboration with IFAEpTechniquesnSMDnWirebondingnFlipchipp Standard Temperaturesp High temperatures: 280CpInterest in 3D packagingpEquipmentnDek248 Screen printernATV reflow oven with vacuum
15、nManual Pick&Place machinepDatacon 2200 PPS for fine pitch (IFAE)nNext month installation in a separate clean roomILC Meeting. Santander, January 2008Si sensor development at CNM Manuel LozanoFuture activitiespStart some activities in APDspSimulation of device operation for device optimizationpIn co
16、llaboration with IFIC, UB, URLpWe are considering the possibility of manufacture APDs (only devices) in our Clean RoomnWe can benefit from deep silicon etching capabilitypWe are not able to manufacture Depfets (due to buried layer)ILC Meeting. Santander, January 2008Si sensor development at CNM Manu
17、el LozanoFinal remarkspWe can manufacture detectors for the ILC collaborationpOnly 4 waferspEven with two metalspGood option to test new ideaspHEP Spanish community could benefit from CNM capabilitiespEasy access through the Spanish “Access to Large Facilities” Program:http:/m.es/gicserv/index.htmnDeadline of next call: 31 January 2008
