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1、上海天上海天马马微微电电子有限公司子有限公司4 4 Mask 工艺介绍工艺介绍q周刚SHANGHAI TIANMA MICRO-ELECTRONICS CO.,LTD.Contentsq开开发Mask技技术目的目的q4Mask技术的发展技术的发展q天马天马4Mask技术开发历程技术开发历程qHTM Teaching Mask试验过程试验过程q附附: SR测量方法简介测量方法简介2SHANGHAI TIANMA MICRO-ELECTRONICS CO.,LTD.l减少一次光刻工艺减少一次光刻工艺, ,缩短缩短TFTTFT制程时间制程时间l提升产能提升产能l降低成本降低成本l增强公司技术实力增强
2、公司技术实力, ,增加市场竞争力增加市场竞争力开发开发MaskMask技术的目的技术的目的3SHANGHAI TIANMA MICRO-ELECTRONICS CO.,LTD.4Mask技术的发展技术的发展q常规常规TFT Array工艺工艺4SHANGHAI TIANMA MICRO-ELECTRONICS CO.,LTD.q4Mask TFT Array工艺工艺5SHANGHAI TIANMA MICRO-ELECTRONICS CO.,LTD.Zhou G: From LGMq4Mask工艺制程方案工艺制程方案 GTM & HTM 6SHANGHAI TIANMA MICRO-ELECT
3、RONICS CO.,LTD.1Dev. CD 1 from Bottom Dev. CD 1 from Bottom HTMGTMChannel CD(After Develop)TopPhoto mask LCDPhotomask LCD 1Photo mask LCDPhotomask LCDqHTMqGTMqGTM & HTM IMAGES7SHANGHAI TIANMA MICRO-ELECTRONICS CO.,LTD.天马天马4Mask4Mask技术开发历程技术开发历程.08.03.13技术开发Kick off 成立项目技术开发小组08.06.26-LGM 2.2” HTM MA
4、SK 到天马,开始4Mask工艺实验08.04 使用7inch S/D layer TEG做GTM 条件测试4 Mask ProcessTeaching mask test08.08.22上海天马首款4MASK样品成功点亮工艺验证与工艺验证与recipe建立建立工艺整合与参数优化工艺整合与参数优化材料评价材料评价资料收集及技术探讨资料收集及技术探讨8SHANGHAI TIANMA MICRO-ELECTRONICS CO.,LTD.4 5 6 7HTM Mask LayoutqHalf Tone LayerHTM Teaching MaskHTM Teaching Mask试验过程试验过程9S
5、HANGHAI TIANMA MICRO-ELECTRONICS CO.,LTD.Active&S/D film Depowet etch S/DDry etchActivePR AshingDry etch (WET )MODry etchn+a-siHTM lithographyDETDE channel Mo:一个chamber 完成四步DE 工艺 Chamber Temp. :Top 60,Bottom 50 ,Wall 60 .WET channel Mo: DE ACT和 PR ashing一个chamber 完成 DE n+a-si可相应调整主要考察刻蚀均匀性,选择比,CDLOS
6、S, channel 形状等.PHOTOHalf PR Thickness , Uniformity ,Taper Angle; Data line and channel CD etc.qHalf Tone layer 工艺选择工艺选择10SHANGHAI TIANMA MICRO-ELECTRONICS CO.,LTD.Scan speed:95mm/secDev time:70swet etch S/DDry etchActivePR ashingDry etch MODry etchn+a-si HTM lithographywet etch S/DDry etchActivePR a
7、shing 60sDry etch MO Dry etchn+a-si HTM lithographyPR ashing 40s50mTorrScan speed:110mm/secDev time:70s150mTorrCondition1Condition2qExperiment Condition11SHANGHAI TIANMA MICRO-ELECTRONICS CO.,LTD.after ACT DE and PR ashingafter Mo DEand n+a-si DEChannel after BCE PRafter Photo5.2um3500AqCondition112
8、SHANGHAI TIANMA MICRO-ELECTRONICS CO.,LTD.channel length 约4umData ESDGate ESDESD channel length 约3.7umData line photo后 6.7-6.8um,刻蚀后4.4umC6：Transmittance 40%，design channel length :6um，half PR thickness about 3500A，实际，实际channel length 约约4um 13SHANGHAI TIANMA MICRO-ELECTRONICS CO.,LTD.同一panel内pixel不同
9、shot pixel比较SHOT1SHOT2SHOT3SHOT46.2um4000Achannel length 约4.5umC7：Transmittance40%，design channel length :7um ;half PR thickness about 4000A，实际，实际channel length 约约4.5um14SHANGHAI TIANMA MICRO-ELECTRONICS CO.,LTD.ActiveMOACTIVE 残留带产生可能原因残留带产生可能原因: 由于SD WET 和ACT DE CD loss 不同,因此ACTIVE刻蚀后a-Si宽度 大于MO 宽度
10、, 后续工艺PR ASHING 和 DE MO 可能对多余的ACTIVE 带表面污染,导致channel 刻蚀过程中ACTIVE 带表层起到钝化作用,刻蚀后残留.After SD WET and ACT DE After PR ashing ACTIVE 残留带Channel after channel DE PRPRData line After channel DE PRMOActiveq存在的问题存在的问题:channel 边缘存在边缘存在ACTIVE 残留残留Active remainActivePRMODry etch ActiveUnder-cut15SHANGHAI TIANMA
11、 MICRO-ELECTRONICS CO.,LTD.改进方向改进方向: 1.减小SD WET 和ACT DE CD loss差,缩减残留带宽度残留带宽度 (1)SD WET 后增加后增加PR ASHING, 减减少少SD WET后后 PR CD(有改善有改善) (2) 增加ACT DE 中化学刻蚀比例(无明显改善) 2.Channel Mo采用WET etch进行工艺对比(有改善) 3.分析残留带表层物质成分,干刻过程中增加相应RECIPE去除(未进行)wet etch S/DDry etchActivePR ashing 60sDry etch MO Dry etchn+a-siHTM l
12、ithographyPR ashing 40sCondition2qACTIVE 残留带去除残留带去除16SHANGHAI TIANMA MICRO-ELECTRONICS CO.,LTD.Condition 1channeldata linewet etch S/DDry etchActivePR ashing Dry etch MO Dry etchn+a-si HTM lithographyqACTIVE 残留带去除效果对比验证残留带去除效果对比验证17SHANGHAI TIANMA MICRO-ELECTRONICS CO.,LTD.台阶基本消失wet etch S/DDry etch
13、ActivePR ashing 60sDry etch MO Dry etchn+a-si HTM lithographyPR ashing 40sCondition2channeldata line18SHANGHAI TIANMA MICRO-ELECTRONICS CO.,LTD.目标值:根据工艺条件设定HTM层TPR, Half PR, Etched PR实验:1. 2.2m胶厚调整与均匀性控制 2. Half PR工艺调整实验2.2m0.5-m1.0mqCondition219SHANGHAI TIANMA MICRO-ELECTRONICS CO.,LTD.Process Cond
14、ition PhotoProcess Condition PhotoPhoto resistAZ SR-110 (4cps)Process2.2inch HTM (ACT&SD Layer)CoaterPR thickness2.2umSoft Bake110/155sVCD67Pa 60sExpEQA1PHT300MaskL022HABCN01DevConcentration2.38wt%Time70sPost-bake105/160sScan speed 105/110/115 mm/sec20SHANGHAI TIANMA MICRO-ELECTRONICS CO.,LTD.Proces
15、s Condition DETProcess Condition DET3000W，30mTorr,Cl2/SF6=1000/100sccm，ChamberTemp60/50/60EPDDry etchActivePR AshingDry etch MODry etchn+a-si3000W， 75 mTorr ， O2/SF6=1000/50sccm， Chamber Temp60/50/603000W，75mTorr,O2/Cl2=1000/500sccm，ChamberTemp60/50/602000W，50mTorr,SF6/Cl2/He=50/750/1500sccm，Chamber
16、Temp60/50/6021105mm/s 110mm/s 115mm/s shot1 shot2 shot3 shot4238SR measure.: 334258SR measure.: 371377SR measure.: 397298SR measure.: 338377SR measure.: 366516SR measure.: 533456SR measure.: 495575SR measure.: 632575SR measure.: 800476SR measure.: 633556SR measure.: 624694SR measure.: 737Transmittan
17、ce40%，Design channel length :6umUnit：nm22105mm/s 110mm/s 115mm/s shot1 shot2 shot3 shot4Unit：nm179SR measure.: 543337SR measure.: 417397SR measure.: 371437SR measure.: 437507SR measure.: 478556SR measure.: 609317SR measure.: 402476SR measure.: 622635SR measure.: 603536SR measure.: 718575SR measure.:
18、 608714SR measure.: 699Transmittance40%，design channel length :7um23105mm/s 110mm/s 115mm/s shot1 shot2 shot3 shot4Unit：nm75SR measure.: 10192SR measure.: 10079SR measure.: 162109SR measure.: 116234SR measure.: 223198SR measure.:214165SR measure.: 144198SR measure.:223278SR measure.: 227317SR measur
19、e.: 318218SR measure.: 246198SR measure.: 371Transmittance45%，design channel length :6um24SHANGHAI TIANMA MICRO-ELECTRONICS CO.,LTD.根据工艺要求:选取C6区为主要参考条件 C6-确定Photo Process Conditions: Scan speed:110mm/sec Dev time:70secPhoto按以上工艺条件提供基板给后段做进一步调试Transmittance : 40% Design channel Length: 6umqTest Concl
20、usions25SHANGHAI TIANMA MICRO-ELECTRONICS CO.,LTD.4.76um SHOT1 SHOT2SHOT3SHOT4After photoAfter BCE Mic下看色差较明显实际SEM检查均匀性尚可qChannel Image26SHANGHAI TIANMA MICRO-ELECTRONICS CO.,LTD.After photo:data CD 6.94umAfter BCE :data CD 4.55umData line CD LOSS about 2.4umMask design 6um150mt BCE出现 undercut,工艺中调整
21、为50mt BCE, qData line CD LOSS27SHANGHAI TIANMA MICRO-ELECTRONICS CO.,LTD.Condition 2 工艺参数工艺参数Data line CD LOSS about 2.4um28SHANGHAI TIANMA MICRO-ELECTRONICS CO.,LTD.在操作电脑上打开软件Shortcut to TANMA_CIM附附: SR: SR测量方法简介测量方法简介29SHANGHAI TIANMA MICRO-ELECTRONICS CO.,LTD.Step1:选择Manual ModeStep2:Px LOADREQSt
22、ep3:GLASS INFOStep4:ROBOT INFOStep5:ENABLEStep6:LOAD GLASSENDLOAD 1 GLASSRECOVER 1 GLASSStep6:RECOVER GLASS30SHANGHAI TIANMA MICRO-ELECTRONICS CO.,LTD.点击：PORT1/2VIEW弹出对话框如Next Page31SHANGHAI TIANMA MICRO-ELECTRONICS CO.,LTD.填写Glass信息选择对应的RecipeINPUT OK钩选需要检测的glass备注:钩选后面输入的信息为测量数据保存文件名开始测量32SHANGHAI TIANMA MICRO-ELECTRONICS CO.,LTD.THANKS周 刚2008.08.2633
