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1、外文资料 DS18B20 Programmable Resolution 1-Wire Digital ThermometerThe DS18B20 Digital Thermometer provides 9 to 12-bit (configurable) temperature readings which indicate the temperature of the device. Information is sent to/from the DS18B20 over a 1-Wire interface, so that only one wire (and ground) ne
2、eds to be connected from a central microprocessor to a DS18B20. Power for reading, writing, and performing temperature conversions can be derived from the data line itself with no need for an external power source. Because each DS18B20 contains a unique silicon serial number, multiple DS18B20s can e
3、xist on the same 1-Wire bus. This allows for placing temperature sensors in many different places. Applications where this feature is useful include HVAC environmental controls, sensing temperatures inside buildings, equipment or machinery, and process monitoring and control.The block diagram of Fig
4、ure 1 shows the major components of the DS18B20. The DS18B20 has four main data components: 1) 64-bit laser ROM, 2) temperature sensor, 3) nonvolatile temperature alarm triggers TH and TL, and 4) a configuration register. The device derives its power from the 1-Wire communication line by storing ene
5、rgy on an internal capacitor during periods of time when the signal line is high and continues to operate off this power source during the low times of the 1-Wire line until it returns high to replenish the parasite (capacitor) supply. As an alternative, the DS18B20 may also be powered from an exter
6、nal 3V - 5.5V supply.Communication to the DS18B20 is via a 1-Wire port. With the 1-Wire port, the memory and control functions will not be available before the ROM function protocol has been established. The master must first provide one of five ROM function commands: 1) Read ROM, 2) Match ROM, 3) S
7、earch ROM, 4) Skip ROM, or 5) Alarm Search. These commands operate on the 64-bit laser ROM portion of each device and can single out a specific device if many are present on the 1-Wire line as well as indicate to the bus master how many and what types of devices are present. After a ROM function seq
8、uence has been successfully executed, the memory and control functions are accessible and the master may then provide any one of the six memory and control function commands. One control function command instructs the DS18B20 to perform a temperature measurement. The result of this measurement will
9、be placed in the DS18B20s scratch-pad memory, and may be read by issuing a memory function command which reads the contents of the scratchpad memory. The temperature alarm triggers TH and TL consist of 1 byte EEPROM each. If the alarm search command is not applied to the DS18B20, these registers may
10、 be used as general purpose user memory. The scratchpad also contains a configuration byte to set the desired resolution of the temperature to digital conversion. Writing TH, TL, and the configuration byte is done using a memory function command. Read access to these registers is through the scratch
11、pad. All data is read and written least significant bit first.The block diagram (Figure 1) shows the parasite-powered circuitry. This circuitry “steals” power whenever the DQ or VDD pins are high. DQ will provide sufficient power as long as the specified timing and voltage requirements are met (see
12、the section titled “1-Wire Bus System”). The advantages of parasite power are twofold: 1) by parasiting off this pin, no local power source is needed for remote sensing of temperature, and 2) the ROM may be read in absence of normal power. In order for the DS18B20 to be able to perform accurate temp
13、erature conversions, sufficient power must be provided over the DQ line when a temperature conversion is taking place. Since the operating current of the DS18B20 is up to 1.5 mA, the DQ line will not have sufficient drive due to the 5k pull up resistor. This problem is particularly acute if several
14、DS18B20s are on the same DQ and attempting to convert simultaneously.There are two ways to assure that the DS18B20 has sufficient supply current during its active conversion cycle. The first is to provide a strong pull up on the DQ line whenever temperature conversions or copies to the E2 memory are
15、 taking place. This may be accomplished by using a MOSFET to pull the DQ line directly to the power supply as shown in Figure 2. The DQ line must be switched over to the strong pull up within 10 us maximum after issuing any protocol that involves copying to the E2 memory or initiates temperature con
16、versions. When using the parasite power mode, the VDD pin must be tied to ground. Another method of supplying current to the DS18B20 is through the use of an external power supply tied to the VDD pin, as shown in Figure 3. The advantage to this is that the strong pull up is not required on the DQ line, and the bus master need not be tied up holding that line high during temperature conversions. This allows other data traffic on the 1-Wire bus during the conversion time
