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1、超级解像技術 S/D Pattern(Channel Length:3.5um) SK-Electronics2012.2 制作2012 SK-Electronics CO.,LTD. All rights reserved.SKE confidentialIntroduction(1/4)利用半导体业界中广泛应用的Assist Pattern开发Mask新产品利用Assist Pattern光回折效果,提高解像度。IntensityIntensity UP无Assist Pattern有Assist PatternAssist Pattern解像极限以下的Slit2012 SK-Electr
2、onics CO.,LTD. All rights reserved.SKE confidentialIntroduction(2/4)利用Half tone型PSM,实现解像度的提升。QZPhase Shift film随Phase Shift膜,它的波長将180deg. Shift。同样Phase 不同PhaseLineSpace界限部位的Contrast将会提升、随之解像度也会上升。光束的抵消现象2012 SK-Electronics CO.,LTD. All rights reserved.SKE confidential2012 SK-Electronics CO.,LTD. All
3、 rights reserved.SKE confidentialIntroduction (4/4)接下来将着重介绍以下2种解像技术。IntensityTOP ViewSide View光振幅分布ReferencePSHTPhase Shift filmHalf tone film+-+-+-Simulation ResultsSSM2012 SK-Electronics CO.,LTD. All rights reserved.SKE confidentialMask Design & ConditionMask DesignCondition初期膜厚 :2.2umREFPSMHTCrPS
4、HTCut line2012 SK-Electronics CO.,LTD. All rights reserved.SKE confidentialSimulation Result: Intensity Round typeIntensity SimulationREFPSMHT2012 SK-Electronics CO.,LTD. All rights reserved.SKE confidentialSimulation Result: Resolution Target 0.6um(Comparison of DOSE 、Resist Profile)DOSE比較 (EOP)Res
5、ist ProfileUnit: mj与Ref相比,未发现任何差别Cut_ line:Xsourcechanneldrain与其它相比,HT(8%)的Contrast (Taper Angle)较低。2012 SK-Electronics CO.,LTD. All rights reserved.SKE confidentialSimulation Result: Resolution Target 0.6um (Comparison of RTPR:Channel)PR残膜厚RangeSimulation実施。Cutline 依赖性(x、y、r)RTPR: Channel part 与Ref
6、相比,没有任何差别。2012 SK-Electronics CO.,LTD. All rights reserved.SKE confidentialSimulation Result: Resolution Target 0.6um (Comparison of RTPR:Channel、 RTPR:Source Part )PR残膜厚RangeSimulation実施。Defocus 依赖性(0、15、30um)RTPR: Channel part Source part (Top-Resist): RTPR与Ref相比,RTPR的变化幅度也没有因为Defocus而产生差距。与Ref相比,
7、还是未产生任何差距。未产生Top-Loss。2012 SK-Electronics CO.,LTD. All rights reserved.SKE confidential总结:SSM总结总结SSM类型分别和Binary,PSM,HTM相比,没有任何差别。可以利用Binary Pattern,足可以达到窄宽效果。Simulation Results全解像2012 SK-Electronics CO.,LTD. All rights reserved.SKE confidentialSimulation Result: Resolution Target 3.5um(Comparison of
8、 DOSE 、Resist Profile)DOSE比較 (EOP)Resist ProfileUnit: mj与Ref相比,HT(8%)对产生能削减24%Dose的效果。同时削减了Tact Time。Cut_ line:Xsourcechanneldrain与其它相比,HT(8%)的Contrast (Taper Angle)是比较小的。PSM和HT(8%),有些许Top-Loss。2012 SK-Electronics CO.,LTD. All rights reserved.SKE confidentialSimulation Result: Resolution Target 3.5u
9、m (Comparison of CD:Channel、 RTPR:Source Part )PR残膜厚RangeSimulation実施。Defocus 依赖赖性(0、15、30um)CD: Channel part 与Ref相比,随着 Defocus变化,PSM的CD变化幅度约有的改善,而HT(8%)有近130nm恶化。Source part (Top-Resist): RTPR随Defocus而产生的RTPR的变化幅度,只有对PSM造成影响(2846)。而PSM和HTM,与Ref相比较,存在约200 Top-Loss。2012 SK-Electronics CO.,LTD. All rights reserved.SKE confidentialConclusion:S/D全解像(3.5um)