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1、1/8February 2003 NEW DATASHEET ACCORDING TO PCN DSG/CT/1C16 MARKING: IRF540 & IRF540 N-CHANNEL 100V - 0.055 - 22A TO-220 LOW GATE CHARGE STripFET II POWER MOSFET ITYPICAL RDS(on) = 0.055 IEXCEPTIONAL dv/dt CAPABILITY I100% AVALANCHE TESTED ILOW GATE CHARGE IAPPLICATION ORIENTED CHARACTERIZATION DESC
2、RIPTION This MOSFET series realized with STMicroelectronics unique STripFET process has specifically been designed to minimize input capacitance and gate charge. It is therefore suitable as primary switch in advanced high- efficiency, high-frequency isolated DC-DC converters for Telecom and Computer
3、 applications. It is also intended for any applications with low gate drive requirements. APPLICATIONS IHIGH-EFFICIENCY DC-DC CONVERTERS IUPS AND MOTOR CONTROL TYPEVDSSRDS(on)ID IRF540100 V0.077 22 A 1 2 3 TO-220 Ordering Information ABSOLUTE MAXIMUM RATINGS () Pulse width limited by safe operating
4、area.1) ISD 22A, di/dt 300A/s, VDD V(BR)DSS, Tj TJMAX (2) Starting Tj = 25 oC, ID = 12A, VDD = 30V SALES TYPEMARKINGPACKAGEPACKAGING IRF540IRF540&TO-220TUBE SymbolParameterValueUnit VDSDrain-source Voltage (VGS = 0)100V VDGRDrain-gate Voltage (RGS = 20 k)100V VGSGate- source Voltage 20V IDDrain Curr
5、ent (continuous) at TC = 25C22A IDDrain Current (continuous) at TC = 100C15A IDM()Drain Current (pulsed)88A PtotTotal Dissipation at TC = 25C85W Derating Factor0.57W/C dv/dt (1)Peak Diode Recovery voltage slope9V/ns EAS (2)Single Pulse Avalanche Energy220mJ TstgStorage Temperature -55 to 175C TjMax.
6、 Operating Junction Temperature INTERNAL SCHEMATIC DIAGRAM IRF540 2/8 THERMAL DATA ELECTRICAL CHARACTERISTICS (Tcase = 25 C unless otherwise specified) OFF ON (1) DYNAMIC Rthj-case Rthj-amb Tl Thermal Resistance Junction-case Thermal Resistance Junction-ambient Maximum Lead Temperature For Soldering
7、 Purpose Max Max Typ 1.76 62.5 300 C/W C/W C SymbolParameterTest ConditionsMin.Typ.Max.Unit V(BR)DSS Drain-source Breakdown Voltage ID = 250 A, VGS = 0100V IDSS Zero Gate Voltage Drain Current (VGS = 0) VDS = Max Rating VDS = Max Rating TC = 125C 1 10 A A IGSS Gate-body Leakage Current (VDS = 0) VGS
8、 = 20V100nA SymbolParameterTest ConditionsMin.Typ.Max.Unit VGS(th)Gate Threshold VoltageVDS = VGS ID = 250 A234V RDS(on) Static Drain-source On Resistance VGS = 10 VID = 11 A0.0550.077 SymbolParameterTest ConditionsMin.Typ.Max.Unit gfs (*)Forward TransconductanceVDS =25 V ID= 11 A20S Ciss Coss Crss
9、Input Capacitance Output Capacitance Reverse Transfer Capacitance VDS = 25V, f = 1 MHz, VGS = 0870 125 52 pF pF pF 3/8 IRF540 SWITCHING ON SWITCHING OFF SOURCE DRAIN DIODE (*)Pulsed: Pulse duration = 300 s, duty cycle 1.5 %. ()Pulse width limited by safe operating area. SymbolParameterTest Condition
10、sMin.Typ.Max.Unit td(on) tr Turn-on Delay Time Rise Time VDD = 50 V ID = 12 A RG= 4.7 VGS = 10 V (Resistive Load, Figure 3) 60 45 ns ns Qg Qgs Qgd Total Gate Charge Gate-Source Charge Gate-Drain Charge VDD= 80 V ID= 22 A VGS= 10V30 6 10 41nC nC nC SymbolParameterTest ConditionsMin.Typ.Max.Unit td(of
11、f) tf Turn-off Delay Time Fall Time VDD = 50 VID = 12 A RG= 4.7, VGS = 10 V (Resistive Load, Figure 3) 50 20 ns ns SymbolParameterTest ConditionsMin.Typ.Max.Unit ISD ISDM () Source-drain Current Source-drain Current (pulsed) 22 88 A A VSD (*)Forward On VoltageISD = 22 A VGS = 01.3V trr Qrr IRRM Reve
12、rse Recovery Time Reverse Recovery Charge Reverse Recovery Current ISD = 22 Adi/dt = 100A/s VDD = 30 VTj = 150C (see test circuit, Figure 5) 100 375 7.5 ns nC A ELECTRICAL CHARACTERISTICS (continued) Safe Operating Area Thermal Impedance IRF540 4/8 Output CharacteristicsTransfer Characteristics Tran
13、sconductanceStatic Drain-source On Resistance Gate Charge vs Gate-source VoltageCapacitance Variations 5/8 IRF540 Normalized Gate Threshold Voltage vs TemperatureNormalized on Resistance vs Temperature Source-drain Diode Forward CharacteristicsNormalized Breakdown Voltage vs Temperature IRF540 6/8 F
14、ig. 1: Unclamped Inductive Load Test CircuitFig. 1: Unclamped Inductive Load Test CircuitFig. 2: Unclamped Inductive Waveform Fig. 3: Switching Times Test Circuits For Resistive Load Fig. 4: Gate Charge test Circuit Fig. 5: Test Circuit For Inductive Load Switching And Diode Recovery Times 7/8 IRF54
15、0 DIM. mm.inch. MIN.TYP. MAX.MIN.TYP. TYP. A4.44.60.1730.181 C1.231.320.0480.051 D2.402.720.0940.107 E0.490.700.0190.027 F0.610.880.0240.034 F11.141.700.0440.067 F21.141.700.0440.067 G4.955.150.1940.203 G12.402.700.0940.106 H21010.400.3930.409 L216.400.645 L328.901.137 L413140.5110.551 L52.652.950.1
16、040.116 L615.2515.750.6000.620 L76.206.600.2440.260 L93.503.930.1370.154 DIA3.753.850.1470.151 TO-220 MECHANICAL DATA IRF540 8/8 Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any pat
