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1、摘 要ZnO 薄膜由于具有优异的光学性能，成为近年来的研究热点。氧化锌(ZnO)是一种直接带隙宽禁带 II-VI 族化合物半导体材料，其室温下禁带宽度约为3.37eV，激子束缚能高达 60meV，远高于室温下的热离化能(26meV)，ZnO 中的激子能够在室温下稳定存在，并且可以产生很强的光致激子紫外发射，非常适于制备室温或更高温度下低阈值、高效率受激发射器件。由于 ZnO 在结构、电学和光学性质等方面有很多优点，并且 ZnO 薄膜的制作方法很多，如磁控溅射(Magnetron Sputtering)、脉冲激光沉积(PLD)、金属有机物化学气相沉积(MOCVD)、喷雾热解(SP)、分子束外延(
2、MBE)等，使其在光探测器、表面声波器件、透明电极、太阳能电池等光电子器件领域有很大的发展前景。不同元素掺杂于 ZnO，可以改善其光学性能。而制备高质量掺杂的 ZnO 薄膜对于实现以上的这些应用具有重要意义。本文按照一定配比制备了 LaAlZnO 靶材，并采用磁控溅射法在 170W 的溅射功率下制备薄膜样品。对样品在不同退火条件下进行 XRD 测定。讨论退火温度对原子间距和结晶性能的影响等性质的影响。具体内容如下：利用磁控溅射法在盖玻片衬底上沉积了 LaAlZnO 薄膜，生长温度为 400,溅射后对薄膜进行了 400、500和 570退火处理。利用 X 射线衍射(XRD)对薄膜进行测试，测试结
3、果：LaAlZnO 薄膜样品在 500和 570退火时具有良好的（002）C 轴择优取向性。在一定温度范围内随退火温度的升高，（002）方向的衍射峰强度逐渐增强，半峰宽逐渐变小，结晶度增大，晶粒尺寸逐渐增大，原子面间距减小（即晶格常量变小）,从而使晶体质量变好。关键词：ZnO 薄膜；磁控溅射；XRD；结晶性能；退火处理AbstractBecause ZnO films have excellent optical performance, so it becomes a popular topic in recent time. ZnO has attracted great interest
4、 for its wide band gap (3.37eV) and relatively large exciton binding energy (60meV) at room temperature (RT). It has been regarded as one of the most promising candidates for the next generation of ultraviolet (UV) light-emitting diodes (LED) and lasing devices(LD) operating at high temperatures and
5、 in harsh environments.Because of the advantages in structure, electrical and optical propertie as wel as various methods for synthesizing ZnO thin films, such as megnetron sputtering, pulsed laser deposition, metal-organic chemical vapor deposition, spray pyrolysis, molecular beam epitaxy.etc. meth
6、ods, ZnO thin films have widely applications in photodetectors, surficial acoustic devices, transparent electrodes, solar cells and so on. Doping different elements into ZnO can improve the optical properties ,and preparation of high-quality doped ZnO films achieving these applications becomes more
7、significant.This article prepareds LaZnO target in accordance with a certain ratio,and using magnetron sputtering method prepared film samples under the sputtering power 170W . The samples is measured by XRD under different annealing conditions. Discuss the impact of annealing temperature on propert
8、ies of atomic distance and crystal properties,etc. The detailed contents are as follows:Use magnetron sputtering deposited LaAlZnO film on cover glass substrate,the temperature of growth is 400, after sputtered the films were annealed on 400, 500 and 570. Test the films by X-ray diffraction (XRD) ,
9、the test results are: LaAlZnO film samples annealed at 500 and 570 have a good (002) C-axis preferred orientation. In a certain temperature range (002) diffraction peak intensity of the direction gradually increased with annealing temperature increased, FWHM becomes smaller, the crystallinity increa
10、ses, Atomic space decreases(the lattice constant quantitative becomes small),so make the crystal quality for better.Key Words: ZnO thin films; RF magnetron sputterin; XRD; Crystallizatio; Annealin目 录引 言.1第一章 ZnO 薄膜概述 .21.1 ZnO 的基本性质.21.1.1 ZnO 的物理化学性质.21.1.2 ZnO 的基本结构.21.1.3 ZnO 的能带结构.31.1.4 ZnO 的电学性质.51.1.5 ZnO 的压电性能.51.1.6 ZnO 的受激发射.61.1.7 ZnO 的气敏性能.61.1.8 综述.71.2 ZnO 主要制备原理介绍.71.2.1 磁控溅射(Sputtering).71.2.2 金属有机物化学气相沉积(MOCVD).91.2.3 激光脉冲沉积(PLD).91.3 ZnO 主要表征技术原理介绍.101.3.1 X 射线衍射技术(XRD).111.3.2 霍尔效应.13第二章 实验过程.142.1 实验仪器.142.1.1 磁控溅射仪.
