近红外铟镓砷640512面阵探测器

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1、 FPA-640x512 InGaAs Imager DATASHEET VERS. 2.3 2010/07/29 Chunghwa Leading Photonics Technology Chunghwa Telecom Co., Ltd. 1 FPA-640x512 InGaAs Imager NEAR INFRARED ( 0.9um-1.7um ) IMAGE SENSOR FEATURES ? 640x512 Array Format ? 28-pin Metal DIP Package ? Embedded Thermoelectric Cooler ? Typical Pixe

2、l Operability 99.5% ? Quantum Efficiency 70% APPLICATIONS ? Near-infrared Imaging ? Imaging Spectroscopy ? Covert Surveillance ? Semiconductor Inspection ? Medical Science and Biology ? Fiberoptic Telecommunication ? Astronomy and Scientific ? Industrial Thermal Imaging ? Moisture Mapping GENERAL DE

3、SCRIPTIONS PARAMETER VALUE Sensor Technology Standard InGaAs/InP Spectral Range 0.9um-1.7um Image Format 640(H)x512(V) Pixel Size 25umx25um (99% Fill Factor) Image Size 16mm(H)x12.8mm(V) Package Type 28-pin Metal DIP Package Weight 24.6g 联系人:徐建强联系电话:13335394541地址:西安市科技一路59号FPA-640x512 InGaAs Imager

4、DATASHEET VERS. 2.3 2010/07/29 Chunghwa Leading Photonics Technology Chunghwa Telecom Co., Ltd. 2 FPA CHARACTERISTICS ( Ta=25C ) PARAMETER TYPICAL CONDITIONS Dark Current 0.2 pA Pixel bias =0.1 volt Quantum Efficiency 70% =1.0um-1.6um Fill Factor 99% Adjacent pixel crosstalk 99%(Minimum) Dark Curren

5、t 20% Full Well Response Nonuniformity 20% * Pixel Operability is defined within the center 636x508 regions ABSOLUTE MAXIMUM RATINGS PARAMETER UNIT MIN MAX Operation Temperature C -20 85 Storage Temperature C -40 85 Power Consumption mW - 325* * without driving the cooler 联系人:徐建强联系电话:13335394541地址:西

6、安市科技一路59号FPA-640x512 InGaAs Imager DATASHEET VERS. 2.3 2010/07/29 Chunghwa Leading Photonics Technology Chunghwa Telecom Co., Ltd. 3 PACKAGE OUTLINE Note : ID number of the imager is printed on the flank of the package联系人:徐建强联系电话:13335394541地址:西安市科技一路59号FPA-640x512 InGaAs Imager DATASHEET VERS. 2.3

7、2010/07/29 Chunghwa Leading Photonics Technology Chunghwa Telecom Co., Ltd. 4 OPERATING CONDITIONS Bias Input Pin # Bias Voltage Current Remark 27 VPD 5.5V 70 1.80A 15.40V 0.00.51.01.52.001020304050607080T (oC)Current (A)0.00.51.01.52.005101520Voltage (V)Current (A)Cooling Performance with sensor lo

8、ading and operating -0.10.00.10.20.30.40.50.60.70.80.730.740.750.760.770.780.790.800.810.820.83273KTEC Current (Amp)Pin 19 TEMP Voltage (Volt)0246810TEC Voltage (Volt)联系人:徐建强联系电话:13335394541地址:西安市科技一路59号FPA-640x512 InGaAs Imager DATASHEET VERS. 2.3 2010/07/29 Chunghwa Leading Photonics Technology Ch

9、unghwa Telecom Co., Ltd. 7 EXAMPLE CURVES Statistical Histogram of Dark Current Test Conditions: Illumination Dark Wavelength - Gain Low Integration Time 16ms Remark Effective Screen Quantum Efficiency Test Conditions: Illumination Nonuniformity 0.15% Wavelength Broadband Gain Low Integration Time 5

10、msec, 50% saturation Remark Effective Screen Array Average Statistical Histogram of Quantum Efficiency Test Conditions: Illumination Nonuniformity 0.15% Wavelength 1310nm Gain Low Integration Time 5msec, 50% saturation Remark Effective Screen Linearity Test Conditions: Illumination Nonuniformity 0.1

11、5% Wavelength 1310nm Gain Low Integration Time - Remark Effective Screen Array Average 联系人:徐建强联系电话:13335394541地址:西安市科技一路59号FPA-640x512 InGaAs Imager DATASHEET VERS. 2.3 2010/07/29 Chunghwa Leading Photonics Technology Chunghwa Telecom Co., Ltd. 8 OUTA WAVEFROM(LOW GAIN MODE) Waveform under dark* Wav

12、eform under saturation * The dark level under high gain mode is 5.1volt. 联系人:徐建强联系电话:13335394541地址:西安市科技一路59号FPA-640x512 InGaAs Imager DATASHEET VERS. 2.3 2010/07/29 Chunghwa Leading Photonics Technology Chunghwa Telecom Co., Ltd. 9 Waveform under near saturation Copyright 2010 Chunghwa Telecom Co., Ltd. The information in this document is subject to change without notice. All rights reserved. 联系人:徐建强联系电话:13335394541地址:西安市科技一路59号

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