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1、国内图书分类号：TN304西北工业大学工学硕士学位论文CdZnTe 薄膜制备与性能表征薄膜制备与性能表征硕士研硕士研 究究 生：生：周 昊导导 师：师：介 万 奇 教授申请学位级别：申请学位级别：硕 士学学 科、专科、专 业：业：材 料 学所所 在在 单单 位：位：材 料 学 院答答 辩辩 日日 期：期：2010 年 03 月授予学位单位：授予学位单位：西北工业大学Classified index：TN304Thesis submitted in partial fulfillment of the requirements for the degree of Master of Engine
2、eringGrowth and Characterization Of CdZnTe FilmMS Candidate： ZHOU HaoAdvisor： Professor JIE WanqiDegree Applied for： Master of EngineeringSpecialty： Materials EngineeringSchool： School of Materials Science and EngineeringDate of Oral Defence： March 2010University Conferring Degree： Northwestern Poly
3、technical University摘 要I摘 要CdZnTe 是一种性能优异的 II-VI 族化合物半导体。虽然对 CdZnTe 体单晶的研究由来已久，但关于 CdZnTe 薄膜的制备、性能及表征上尚存在诸多难题。本文研究了真空蒸发法制备 CdZnTe 薄膜的技术；分析了 CdZnTe 薄膜的沉积模型；对比了退火前后 CdZnTe 薄膜成分、结构和光电性能的变化。利用真空蒸发法制备 CdZnTe 纳米薄膜。该方法具有工艺简单，成膜致密且均匀性好以及反应参数易于控制等优点，是目前大面积、低成本制备 CdZnTe薄膜的一种重要方法。我们通过采用相同的沉积工艺，改变沉积时间，得到了三组不同厚度
4、的 CdZnTe 薄膜，依次分别命名为 CZT-1、CZT-2 和 CZT-3。分析了不同沉积工艺条件下制备得到的 CdZnTe 薄膜的结晶质量、表面形貌、禁带宽度和电学性能；采用高分辨透射电镜观察了 CdZnTe 薄膜与衬底界面处的微观结构，分析了 CdZnTe 薄膜沉积模型；对所制备的 CdZnTe 薄膜在 N2气氛下进行退火处理，研究了不同退火工艺对薄膜形貌、光学带隙宽度和电学性能的影响。研究发现，当衬底温度为室温时，真空蒸镀制备的薄膜中的成分配比偏离原料中的配比，呈现不同程度的富 Te 倾向。随着沉积时间的延长，CdZnTe 薄膜表现出明显的择优取向生长，生长面为（111）面，并表现出
5、层岛复合模式的生长机制。三组薄膜 CZT-1、CZT-2 和 CZT-3 的禁带宽度依次分别为2.26eV、2.12eV 和 1.6eV，电阻率依次分别为 4.2E9cm、3.1E11cm和7.4E11cm。在300和 400氮气气氛退火后，薄膜择优取向得到加强，薄膜颗粒长大，光学吸收边变得陡峭，电阻率提高，平衡载流子增加。关键词 CdZnTe 薄膜, 太阳能电池, 性能表征, 退火ABSTRACTIIABSTRACTCdZnTe (CZT) is a kind of II-VI semiconductors with excellent photoelectric properties. A
6、lthough the study on CdZnTe crystal has lasted for a long period, there still exist some problems in the preparation, characterization and upgradation of CdZnTe films. In this thesis, the CdZnTe thin films were prepared by vacuum deposition method, which is proved to be the best method among differe
7、nt technologies for the large area prepration of CdZnTe thin films due to its simplicity and low cost.Nano-crystalline CdZnTe films were grown on silicon wafer and glass substrate by vacuum deposition method. CdZnTe film samples grown under the same conditions with different deposition time, are nam
8、ed CZT1, CZT2 and CZT-3 respectively.The composition, structure, surface morphology and the photoelectric properties of the three samples were analyzed. The effects of the annealing in N2 on the properties were studied. The interface between the CdZnTe films and Si substrate were observed with HRTEM
9、. Based on the above analysis, we proposed a model for the CdZnTe film deposition.The results showed that the films possess a preferable growth surface of (111). The films are rich in amorphous Te at the beginning of the growth, but tend to the stoichiometric composition of zinc blend structure of C
10、dZnTe crystal. With the increase of the deposition time, the individual grains tend to form continuous multi-grain layer. For the deposition time of 15min、30min and 45min, the band gap g Eof the three films as measured to be 2.26eV, 2.12eV and 1.6eV and the resistivity of the films are 4.2E9cm, 3.1E
11、11cm and 7.4E11cm respectively. The influence of the annealing under different temperature in N2 on the properties of the CdZnTe films was also studied. The preferred orientation of the films became more obviously and the size of individual grains increased. The optics absorbing boundary of the CdZn
12、Te films become sharper showed a better crystallization quality after annealling. I-V characteristics showed that the resistivity and the carrier concentration of CZT-1 were also increased after annealing.Key words CdZnTe film, Solar Cell, Characterization, Annealing目 录III目 录摘 要.IABSTRACT .II目 录.III第 1 章 绪论.11.1 引言.11.2 -族薄膜太阳能电池 .11.2.1 CdS-CdTe 薄膜太阳能电池.11.2.2 CdZnTe 薄膜做背接触层材料 .31.2.3 CdZnTe 薄膜做吸收层材料 .51.2.4 CdZnTe 薄膜做窗口层材料 .8 1.3 CdZnTe 薄膜探测器 .9 1.4 CdZnTe 薄膜的制备 .
