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1、 JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO LTD SOT 23 Plastic Encapsulate Transistors BC856A B TRANSISTOR PNP BC857A B C BC858A B C FEATURES Ideally suited for automatic insertion For Switching and AF Amplifier Applications MAXIMUM RATINGS Ta 25 unless otherwise noted Symbol Parameter Value Unit
2、VCBO Collector Base Voltage BC856 BC857 BC858 80 50 30 V VCEO Collector Emitter Voltage BC856 BC857 BC858 65 45 30 V VEBO Emitter Base Voltage 5 V IC Collector Current Continuous 0 1 A PC Collector Power Dissipation 200 mW TJ Junction Temperature 150 Tstg Storage Temperature 65 150 DEVICE MARKING BC
3、856A 3A BC856B 3B BC857A 3E BC857B 3F BC857C 3G BC858A 3J BC858B 3K BC858C 3L SOT 23 1 BASE 2 EMITTER 3 COLLECTOR B Jul 2013 南京南山半导体有限公司 长电贴片三极管选型资料 南京南山半导体有限公司 长电贴片三极管选型资料 ELECTRICAL CHARACTERISTICS Ta 25 unless otherwise specified Parameter Symbol Test conditions Min MaxUnit Collector base breakdo
4、wn voltage BC856 BC857 BC858 VCBO IC 10 A IE 0 80 50 30 V Collector emitter breakdown voltage BC856 BC857 BC858 VCEO IC 10mA IB 0 65 45 30 V Emitter base breakdown voltage VEBO IE 1 A IC 0 5 V Collector cut off current BC856 BC857 BC858 ICBO VCB 70 V IE 0 VCB 45 V IE 0 VCB 25 V IE 0 0 1 A Collector
5、cut off current BC856 BC857 BC858 ICEO VCE 60 V IB 0 VCE 40 V IB 0 VCE 25 V IB 0 0 1 A Emitter cut off current IEBO VEB 5 V IC 0 0 1 A DC current gain BC856A 857A 858A BC856B 857B 858B BC857C BC858C hFE VCE 5V IC 2mA 125 220 420 250 475 800 Collector emitter saturation voltage VCE sat IC 100mA IB 5
6、mA 0 5 V Base emitter saturation voltage VBE sat IC 100mA IB 5mA 1 1 V Transition frequency fT VCE 5 V IC 10mA f 100MHz 100 MHz Collector capacitance Cob VCB 10V f 1MHz 4 5 pF B Jul 2013 南京南山半导体有限公司 长电贴片三极管选型资料 南京南山半导体有限公司 长电贴片三极管选型资料 0 1 1 10 1 10 0 1 1 10 100 10 100 0255075100125150 0 50 100 150 2
7、00 250 0 2 4 6 8 0 2 4 6 8 0 1 1 10 100 10 100 1000 0 1 1 10 100 0 1 1 0 0 0 3 0 6 0 9 1 2 0 1 1 10 100 0 1 1 10 100 0 01 0 1 1 20 f 1MHz IE 0 IC 0 Ta 25 VCB VEBCob Cib Cob Cib CAPACITANCE C pF REVERSE VOLTAGE VR V 30 COMMON EMITTER VCE 5V Ta 25 TRANSITION FREQUENCY fT MHz COLLECTOR CURRENT IC mA 50
8、0 PC Ta COLLECTOR POWER DISSIPATION PC mW AMBIENT TEMPERATURE Ta 9uA 12uA 15uA 18uA 24uA 30uA 27uA 21uA COMMON EMITTER Ta 25 6uA IB 3uA Static Characteristic COLLECTOR CURRENT IC mA COLLECTOR EMITTER VOLTAGE VCE V COMMON EMITTER VCE 5V IC Ta 25 Ta 100 DC CURRENT GAIN hFE COLLECTOR CURRENT IC mA ICfT
9、 hFE 20 ICVBEsat Ta 100 Ta 25 BASE EMITTER SATURATION VOLTAGE VBEsat V COLLECTOR CURRENT IC mA 2 COMMON EMITTER VCE 5V BC856 BC857 BC858Typical Characterisitics VBEIC Ta 100 Ta 25 COLLECTOR CURRENT IC mA BASE EMMITER VOLTAGE VBE V 20 Ta 100 Ta 25 ICVCEsat COLLECTOR EMITTER SATURATION VOLTAGE VCEsat
10、V COLLECTOR CURRENT IC mA B Jul 2013 Min Max Min Max A0 9001 1500 0350 045 A10 0000 1000 0000 004 A20 9001 0500 0350 041 b0 3000 5000 0120 020 c0 0800 1500 0030 006 D2 8003 0000 1100 118 E1 2001 4000 0470 055 E12 2502 5500 0890 100 e e11 8002 0000 0710 079 L L10 3000 5000 0120 020 0 8 0 8 0 550 REF
11、0 022 REF Symbol Dimensions In InchesDimensions In Millimeters 0 950 TYP 0 037 TYP 南京南山半导体有限公司 长电三极管选型资料 南京南山半导体有限公司 长电三极管选型资料 The bottom gasket The top gasket 3000 1 PCS 3000 15 PCS Label on the Reel Label on the Inner Box Label on the Outer Box QA Label Seal the box with the tape Seal the box with the tape Stamp EMPTY on the empty box Inner Box 210 mm 208 mm 203 mmOuter Box 440 mm 440 mm 230 mm
