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1、Silvaco TCADSilvaco TCAD 工艺仿真 二 工艺仿真 二 Tang shaohua SCU 1Silvaco学习 E Mail shaohuachn shaohuachn 上一讲知识回顾 熟悉仿真流程 2Silvaco学习 1 建立仿真网格 2 仿真初始化 3 工艺步骤 4 抽取特性 5 结构操作 6 Tonyplot显示 go athena Line x loc 0 0 spac 0 02 Line x loc 1 0 spac 0 10 Line y loc 0 0 spac 0 02 Line y loc 2 0 spac 0 20 init two d Diffus
2、e time 30 temp 1200 dryo2 extract name Tox thickness oxide mat occno 1 x val 0 tonyplot quit 小试牛刀之 Diffuse做氧化 优化 这一讲的安排 介绍各个工艺的参数及其意义 举例说明 这些工艺有 离子注入 扩散 淀积 刻蚀 外延和抛 光 Silvaco学习3 离子注入 命令implant 参数及说明如下 4Silvaco学习 离子注入的参数及说明 5Silvaco学习 离子注入的几何说明 注入面 表面 仿真面 Tilt angle Rotation angle 离子注入的例句 6Silvaco学习 I
3、mplant phosph dose 1e14 energy 100 tilt 15 Implant boron dose 1e13 energy 50 tilt 0 s oxide 0 005 Implant boron dose 1e13 energy 300 bca tilt 0 rotation 0 Analytical 注入 SVDP注入 s oxide为屏氧厚度 Monte Carlo注入 Implant boron dose 1e14 energy 50 unit damage dam factor 0 1 注入损伤 离子注入的例子 7Silvaco学习 go athena Li
4、ne x loc 0 0 spac 0 02 Line x loc 1 0 spac 0 10 Line y loc 0 0 spac 0 02 Line y loc 2 0 spac 0 20 init silicon c boron 1e16 two d Implant phosph dose 1e13 energy 50 tilt 7 unit damage dam factor 0 05 extract name xj xj material Silicon mat occno 1 x val 0 05 junc occno 1 tonyplot 抽取得到结深 Xj 0 267678
5、m 把spac 0 02 换成0 1看有什么不同 扩散 命令diffuse 参数及说明如下 8Silvaco学习 扩散的例句 9Silvaco学习 Diffuse time 1 hour temp 1000 c boron 1e20 Diffuse time 30 temp 1200 weto2 Diffuse time 2 temp 800 t final 1200 nitro press 2 Diffuse time 20 temp 1200 nitro press 2 Diffuse time 2 temp 1200 t final 800 nitro press 2 Diffuse t
6、ime 1 temp 1000 nitro press 1 5 磷的预沉积 湿氧氧化 也可以定义气流 变温扩散 快速热退火 RTA 高级的扩散模型 Method pls Diffuse time 1 hour temp 950 nitro c phos 1e20 tsave 1 tsave mult 10 dump predep predep 扩散的例子 10Silvaco学习 go athena Line x loc 0 0 spac 0 02 Line x loc 1 0 spac 0 10 Line y loc 0 0 spac 0 1 Line y loc 2 0 spac 0 20
7、init silicon c boron 1e16 two d Method pls Diffuse time 1 hour temp 950 nitro c phos 1e20 tsave 1 tsave mult 10 dump prefix predep tonyplot predep str tonyplot overlay predep str 淀积 命令deposit 参数及其说明如下 11Silvaco学习 淀积参数及例句 12Silvaco学习 Deposit oxide thick 0 1 dy 0 01 ydy 0 05 Deposit oxide thick 0 1 di
8、v 10 淀积 网格控制 Deposit material BPSG thick 1 c boron 1e20 c phos 1e20 淀积BPSG Rate depo machine MOCVD cvd dep rate 0 1 u m step cov 0 75 tungsten Deposit machine MOCVD time 1 minute 淀积 网格控制 淀积的例子 网格 13Silvaco学习 Deposit oxide thick 0 1 div 10 Deposit oxide thick 0 1 dy 0 03 ydy 0 05 Deposit oxide thick
9、0 1 dy 0 06 ydy 0 05 go athena Line x loc 0 0 spac 0 02 Line x loc 1 0 spac 0 10 Line y loc 0 0 spac 0 02 Line y loc 2 0 spac 0 20 init silicon c boron 1e16 two d tonyplot Deposit oxide thick 0 1 dy 0 01 ydy 0 05 Note The number of grid divisions has not been specified A non uniform grid with 14 div
10、isions and 0 001 micron spacings at the top and bottom will be used 新淀积的层 衬底 ydy dy Dy和ydy示意图 网格线 刻蚀 命令etch 参数有 14Silvaco学习 刻蚀参数及其说明 15Silvaco学习 等离子 体刻蚀 RIE和湿 法刻蚀 刻蚀参数及其说明 16Silvaco学习 Monte Carlo 等离子刻蚀 参数Isotropic只是一个速率 等方向性的速率 简单的例句 Silvaco学习17 go athena Line x loc 0 0 spac 0 02 Line x loc 1 0 spac
11、 0 10 Line y loc 0 0 spac 0 02 Line y loc 2 0 spac 0 20 init c boron 1e16 two d deposit oxide thick 0 1 div 10 deposit silicon thick 0 5 div 10 structure outfile origin str Etch silicon left p1 x 0 5 structure outfile etch p1x 0 5 str go athena init infile origin str Etch silicon all structure outfi
12、le etch all str tonyplot origin str etch p1x 0 5 str etch all str Etch silicon left p1 x 0 5 将x 0 5 m往左的硅材料刻蚀掉 Etch silicon all 曝露的硅全被刻蚀掉 刻蚀的例子 Silvaco学习18 go athena Line x loc 0 0 spac 0 05 Line x loc 2 5 spac 0 02 Line x loc 5 0 spac 0 05 Line y loc 0 0 spac 0 02 Line y loc 2 0 spac 0 20 init c bo
13、ron 1e16 two d deposit oxide thick 0 5 div 10 structure outfile mask str tonyplot mask str Etch oxide start x 1 5 y 0 0 Etch continue x 1 5 y 0 6 Etch continue x 3 5 y 0 6 Etch done x 3 5 y 0 0 1 5 0 3 5 0 刻蚀由点连起来的多边形区域 1 5 0 6 3 5 0 6 后面刻蚀的例子中掩膜即由此得到 刻蚀的例子 Silvaco学习19 go athena init infile mask str
14、 etch tonyplot Etch silicon thick 0 5 刻蚀硅厚度0 5 m Etch dry thick 0 3 表面材料刻蚀掉0 3 m Rate etch machine wet silicon wet etch isotropic 0 5 u m Etch machine wet time 2 minutes 湿法刻蚀 各项异性比0 5 Rate etch machine plasma1 silicon u m rie isotropic 0 1 direct 0 9 Etch machine plasma1 time 1 minutes RIE刻蚀 刻蚀的例子 2
15、0Silvaco学习 go athena init infile mask str etch tonyplot Rate etch machine PEMach plasma pressure 3 75 tgas 300 tion 3000 vpdc 32 5 vpac 32 5 lshdc 0 005 lshac 0 0 Freq 13 56 nparticles 4000 mgas 40 mion 40 constant energy div 50 qio 1 7e 19 qcht 2 1e 19 Rate etch machine PEMach plasma material silic
16、on k i 1 1 Etch machine PEMach time 1 minutes 等离子体刻蚀 Rate etch machine MCETCH silicon mc plasma ion types 1 mc part1 20000 mc norm t1 14 0 mc lat t1 2 0 mc ion cu1 15 mc etch1 1e 05 mc alb1 0 2 mc plm alb 0 5 mc polympt 5000 mc rflctdif 0 5 Etch machine MCETCH time 1 minutes mc sm 0 001 mc redepo f mc dt fact 2 Monte Carlo刻蚀 外延 外延的命令epitaxy 参数及其说明如下 21Silvaco学习 外延的例子 Silvaco学习22 go athena init infile mask str Epitaxy Structure outfile Tonyplot str 外延是硅的外延 Epitaxy time 1 temp 1000 c boron 1e15 gr
