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1、1 12 30 03 IRLR7843 IRLU7843 HEXFET Power MOSFET Notes through are on page 11 Applications Benefits Very Low RDS on at 4 5V VGS Ultra Low Gate Impedance Fully Characterized Avalanche Voltage and Current High Frequency Synchronous Buck Converters for Computer Processor Power High Frequency Isolated D
2、C DC Converters with Synchronous Rectification for Telecom and Industrial Use D Pak IRLR7843 I Pak IRLU7843 Absolute Maximum Ratings ParameterUnits VDS Drain to Source VoltageV VGSGate to Source Voltage ID TC 25 CContinuous Drain Current VGS 10V ID TC 100 CContinuous Drain Current VGS 10VA IDM Pulse
3、d Drain Current PD TC 25 C Maximum Power Dissipation W PD TC 100 C Maximum Power Dissipation Linear Derating Factor W C TJ Operating Junction and C TSTGStorage Temperature Range Soldering Temperature for 10 seconds Thermal Resistance ParameterTyp Max Units R JC Junction to Case 1 05 R JA Junction to
4、 Ambient PCB Mount 50 C W R JA Junction to Ambient 110 140 Max 161 113 620 20 30 0 95 71 300 1 6mm from case 55 to 175 VDSSRDS on maxQg 30V3 3m 34nC Static TJ 25 C unless otherwise specified ParameterMin Typ Max Units BVDSS Drain to Source Breakdown Voltage30 V VDSS TJ Breakdown Voltage Temp Coeffic
5、ient 19 mV C RDS on Static Drain to Source On Resistance 2 63 3 m 3 24 0 VGS th Gate Threshold Voltage1 5 2 3V VGS th TJGate Threshold Voltage Coefficient 5 4 mV C IDSS Drain to Source Leakage Current 1 0 A 150 IGSS Gate to Source Forward Leakage 100nA Gate to Source Reverse Leakage 100 gfsForward T
6、ransconductance37 S Qg Total Gate Charge 3450 Qgs1 Pre Vth Gate to Source Charge 9 1 Qgs2 Post Vth Gate to Source Charge 2 5 nC Qgd Gate to Drain Charge 12 Qgodr Gate Charge Overdrive 10 See Fig 16 QswSwitch Charge Qgs2 Qgd 15 Qoss Output Charge 21 nC td on Turn On Delay Time 25 tr Rise Time 42 td o
7、ff Turn Off Delay Time 34 ns tf Fall Time 19 Ciss Input Capacitance 4380 Coss Output Capacitance 940 pF Crss Reverse Transfer Capacitance 430 Avalanche Characteristics ParameterUnits EAS Single Pulse Avalanche Energy mJ IAR Avalanche Current A EAR Repetitive Avalanche Energy mJ Diode Characteristics
8、 ParameterMin Typ Max Units IS Continuous Source Current 161 Body Diode A ISM Pulsed Source Current 620 Body Diode VSD Diode Forward Voltage 1 0V trr Reverse Recovery Time 3959ns Qrr Reverse Recovery Charge 3654nC ton Forward Turn On Time VDS VGS ID 250 A VDS 24V VGS 0V VDS 24V VGS 0V TJ 125 C Condi
9、tions 14 Max 1440 12 1 0MHz ID 12A VDS 15V Conditions VGS 0V ID 250 A Reference to 25 C ID 1mA VGS 10V ID 15A VGS 4 5V ID 12A VGS 20V VGS 20V VDS 15V ID 12A VDS 15V VGS 0V VDD 15V VGS 4 5V Clamped Inductive Load TJ 25 C IF 12A VDD 15V di dt 100A s TJ 25 C IS 12A VGS 0V showing the integral reverse p
10、 n junction diode Intrinsic turn on time is negligible turn on is dominated by LS LD MOSFET symbol VGS 4 5V Typ ID 12A VGS 0V VDS 15V 3 Fig 4 Normalized On Resistance vs Temperature Fig 2 Typical Output CharacteristicsFig 1 Typical Output Characteristics Fig 3 Typical Transfer Characteristics 2 03 0
11、4 05 0 VGS Gate to Source Voltage V 1 10 100 1000 ID Drain to Source Current TJ 25 C TJ 175 C VDS 15V 20 s PULSE WIDTH 60 40 20020406080 100 120 140 160 180 TJ Junction Temperature C 0 5 1 0 1 5 2 0 RDS on Drain to Source On Resistance Normalized ID 30A VGS 10V 0 1110100 VDS Drain to Source Voltage
12、V 0 1 1 10 100 1000 ID Drain to Source Current A 2 5V 20 s PULSE WIDTH Tj 25 C VGS TOP 10V 4 5V 3 7V 3 5V 3 3V 3 0V 2 7V BOTTOM 2 5V 0 1110100 VDS Drain to Source Voltage V 1 10 100 1000 ID Drain to Source Current A 2 5V 20 s PULSE WIDTH Tj 175 C VGS TOP 10V 4 5V 3 7V 3 5V 3 3V 3 0V 2 7V BOTTOM 2 5V
13、 Fig 8 Maximum Safe Operating Area Fig 6 Typical Gate Charge vs Gate to Source Voltage Fig 5 Typical Capacitance vs Drain to Source Voltage Fig 7 Typical Source Drain Diode Forward Voltage 110100 VDS Drain to Source Voltage V 100 1000 10000 100000 C Capacitance pF Coss Crss Ciss VGS 0V f 1 MHZ Ciss
14、Cgs Cgd Cds SHORTED Crss Cgd Coss Cds Cgd 020406080 QG Total Gate Charge nC 0 2 4 6 8 10 12 VGS Gate to Source Voltage V VDS 24V VDS 15V ID 12A 0 00 51 01 5 VSD Source toDrain Voltage V 0 1 1 0 10 0 100 0 1000 0 ISD Reverse Drain Current A TJ 25 C TJ 175 C VGS 0V 0 11 010 0100 01000 0 VDS Drain toSo
15、urce Voltage V 1 10 100 1000 10000 ID Drain to Source Current A Tc 25 C Tj 175 C Single Pulse 1msec 10msec OPERATION IN THIS AREA LIMITED BY RDS on 100 sec 5 Fig 11 Maximum Effective Transient Thermal Impedance Junction to Case Fig 9 Maximum Drain Current vs Case Temperature Fig 10 Threshold Voltage
16、 vs Temperature 255075100125150175 TC Case Temperature C 0 40 80 120 160 ID Drain Current A LIMITED BY PACKAGE 75 50 250255075100 125 150 175 TJ Temperature C 0 0 0 5 1 0 1 5 2 0 2 5 VGS th Gate threshold Voltage V ID 250 A 1E 0061E 0050 00010 0010 010 1 t1 Rectangular Pulse Duration sec 0 001 0 01 0 1 1 10 Thermal Response Z thJC 0 20 0 10 D 0 50 0 02 0 01 0 05 SINGLE PULSE THERMAL RESPONSE Notes 1 Duty Factor D t1 t2 2 Peak Tj P dm x Zthjc Tc Ri C W i sec 0 5084 0 000392 0 5423 0 011108 J J 1
