PHOTO basic process training-中芯国际

Cension Litho黄光制程简介黄光制程简介Cension Litho目录目录•半导体制程简介半导体制程简介•黄光制程简介黄光制程简介•涂胶系统涂胶系统•曝光系统曝光系统•显影系统显影系统•检测系统检测系统•总结黄光制程总结黄光制程Cension Litho半导体制程简介半导体制程简介生长薄膜生长薄膜 (Thin film)黄黄光光(Photo)蚀蚀刻刻(Etch)离子注入离子注入(Implant)扩散扩散(Diffusion)清洗清洗(Clean)抛光抛光(CMP)清洗清洗 (Clean)清洗清洗(Clean)Cension Litho什么是什么是黄光区黄光区?Cension LithoMaterialSelectionImprovedAD chamberAdditional PreFilterTRACKCleaningSystemSeparationLithography AreaOther AreaNH3- Clean Room -† Clean† Wave Length Control “Class100” within100(0.5umUP)/f3(0.028m3)Cension LithoPhoto in-line process flow overviewPhoto in-line process flow overviewDefinition:Definition:PhotolithographyIt’s pattern printing process on the resist coated wafer by UV exposure and pattern designed mask(Reticle).WaferFilmFilm DepositionWaferFilmPhoto resistResist CoatWaferFilmPhoto resistUV ExposurehvReticleWaferDevelopingFilmWaferEtchGasEE / FOOL Base Line / FBMix & Match(System)Pattern Size ControlPattern Profile ControlAlign Control between layerPhotoJOBFACTOR• Process condition depends on which layer : Substrate condition,CD,Topology,OL target,Etch target etc• Key process factor : Tpr(A),Use BARC or not,SB,TARC or not,WEE,EE,FO,OL offset,PEB, Dev. Dipping time and so on.• Key machine factor : Cup exhaust pressure,Water jacket control temp,Chamber pressure,Temp,focus, Plate exhaust,PEB temp Accuracy. [1] [1] General FlowGeneral FlowCension LithoPhoto in-line process flow overviewPhoto in-line process flow overviewHMDS coatHMDS coatCooling1Cooling1PR Coat(PR Coat(****) )Soft BakeSoft BakeCooling2Cooling2WEE(WEE($ $) ) EGA alignEGA alignExposureExposureHard BakeHard BakeDevelopingDevelopingP.E.B(P.E.B($$$$) )Scope(Scope($$$$$$) )OL measureOL measureCD measureCD measureIon ImpIon ImpEtchEtchReworkReworkDepositionDepositionEXPOSURETRACKPR stripPR stripIN-LINECoolingCoolingBARCBARCTARC(TARC(******) )BAKE(BAKE(* *) )stepper(*) Absolutely we remove moisture on the wafer before BARC coating : Secondary reaction (**) EBR is not absolute process : We can use WEE instead of EBR ==> Need recipe tuning(***) TARC should be coated after PR bake(Soft bake) : Do not TARC bake(Secondary reaction)($) We can change from before exposure to after exposure for I-line,but DUV cannot.($$) PEDPED control is very importantvery important to maintain process performance for DUVDUV,but I-line isn’t.($$$) ADI procedure is important to reduce ADI loss : Scope ==> OL ==> CDScope ==> OL ==> CDBAKEBAKECension Litho黄光制程简介黄光制程简介简单的来说简单的来说, 黄光制程分为四大部分黄光制程分为四大部分:•涂胶涂胶•曝光曝光•显影显影•检测检测Cension Litho涂胶显影机的外形涂胶显影机的外形Cension Litho1. 什么是光阻什么是光阻 ( Photoresist) 光光阻阻是是一一种种化化学学材材料料，，在在PHOTO process 中中经经过过曝曝光光和和显显影影两两个个步步骤骤将将光光罩罩(Mask)上上的的图图形形转转移移到到光光阻阻上上，， 在在下下一一站站etch或或implant时时作作为为保保护护层层将将不不需需要要etch或或implant的地方保护起来，再次将图案转移到的地方保护起来，再次将图案转移到wafer上。

上2. 光阻的分类光阻的分类光阻分正光阻光阻分正光阻 ( Positive photoresist) 和负光阻和负光阻 ( Negative photoresist)感光的部分溶于显影剂感光的部分溶于显影剂(Developer)的叫正的叫正光阻，感光的部分不溶于显影剂的叫负光阻光阻，感光的部分不溶于显影剂的叫负光阻Cension Litho光阻在图形中的作用光阻在图形中的作用:•Used to “resist” etch.•Used to “resist” ion implantation.•Accurately “aligned” to other patterns.•Critically sized. Cension Litho在晶圆上面涂上一层光阻在晶圆上面涂上一层光阻. 共分成共分成 6 大部步骤大部步骤涂胶的步骤涂胶的步骤第一步第一步: 脱水脱水 (DEHYDRATION),用加热法去掉晶圆用加热法去掉晶圆的水分的水分.俯视图侧面图Cension Litho涂胶的步骤涂胶的步骤第第 2 步步: 粘附粘附 (ADHERSION),用粘附济用粘附济(HMDS)涂在涂在晶圆表面以增加粘附性晶圆表面以增加粘附性.俯视图侧面图HMDSCension Litho第第 3 步步: 冷却冷却(COOLING), 把晶圆冷却到室温把晶圆冷却到室温.俯视图侧面图涂胶的步骤涂胶的步骤Cension Litho第第 4 步步:涂胶涂胶(COATING), 把晶圆涂上一层光阻胶把晶圆涂上一层光阻胶.侧面图俯视图E.B.R.(Edge Bead Removal)光阻胶涂胶的步骤涂胶的步骤Cension Litho第第5步步: 预烘预烘 (SOFTBAKE),用加热法把光阻中的溶用加热法把光阻中的溶剂蒸发掉剂蒸发掉.侧面图俯视图涂胶的步骤涂胶的步骤Cension Litho第第 6 步步: 冷却冷却(COOLING), 把晶圆冷却到室温把晶圆冷却到室温.侧面图俯视图涂胶的步骤涂胶的步骤Cension Litho曝光机的外形曝光机的外形Cension Litho曝光的作用曝光的作用侧面图LightReticleLensResistWafer俯视图Cension Litho曝光机的分类曝光机的分类•按按光源分类光源分类: DUV (波长波长=248) ; I-line (波长波长=365nm)•按运作分类按运作分类:扫描机扫描机(SCANNER); 步进机步进机(STEPPER)Cension LithoS S ++++FiducialTest KeyTest LineMain PatternScribe LineGlobal MarkQA CellBarcode什么是光罩什么是光罩?光罩是有很多图形光罩是有很多图形(Pattern））的模板设计图形的模板设计图形Cension Litho什么是显影液什么是显影液:•Developer is used to chemically develop the photoresist pattern on exposed wafers. The basic developer reacts with the exposure-induce carboxylic acid resist.Cension Litho显影的步骤显影的步骤:第第1步步,曝光后之烘烤曝光后之烘烤(PEB), 目的是减少驻目的是减少驻波波.俯视图侧面图Cension Litho第第2步步,冷却冷却(COOLING), 把晶圆冷却到室温把晶圆冷却到室温俯视图侧面图显影的步骤显影的步骤:Cension Litho第第3步步,显影显影(DEVELOPING). 显现图形显现图形.俯视图侧面图显影液显影的步骤显影的步骤:Cension Litho俯视图侧面图第第4步步,后烘后烘(HARDBAKE). 使光阻硬化使光阻硬化.显影的步骤显影的步骤:Cension Litho第第5步步,冷却冷却(COOLING), 把晶圆冷却到室温把晶圆冷却到室温俯视图侧面图显影的步骤显影的步骤:Cension Litho检测系统检测系统检测共分检测共分4个部份个部份, 其中首其中首3个用在产品个用在产品.•OVERLAY•CD SEM•ADI INSPECTION•RESIST THICKNESS MEASUREMENTCension LithoOVERLAY 的作用的作用------测量图形的对准状况测量图形的对准状况.机台机台外观外观:前层现层Cension LithoCD-SEM 的作用的作用-----测量图形的大小测量图形的大小.机台机台外观外观:Cension LithoADI INSPECTION 的作用的作用-----显影后显影后, 检测晶圆上有没有瑕次检测晶圆上有没有瑕次.机台机台外观外观:Cension Litho厚度测量仪的作用厚度测量仪的作用-----用来测量光阻的厚度用来测量光阻的厚度光阻的厚度光阻的厚度Cension Litho总结黄光制程总结黄光制程脱水脱水(Dehydration)粘附粘附(HMDS) 冷却冷却(Cooling)涂胶涂胶(Coating)预烘预烘 (Softbake) 冷却冷却烘烤烘烤(PEB) 冷却冷却检测检测 Overlay检测检测 CD SEM检测检测 ADI检测光检测光阻厚度阻厚度曝光曝光(Exposure)光罩光罩(Reticle)显影显影(Developing) 冷却冷却后烘后烘(Hardbake)Cension Litho1. 曝光机曝光机(Duv,I-line,g-line)•ASML的Scanner:Cension LithoScannerStepperCension Litho曝光机的种类曝光机的种类(Scanner ,Stepper)工作方式区分：工作方式区分： 1 .步进式曝光机：步进式曝光机：Stepper 主要机台：主要机台： Cannon iZ01 2 .扫描式曝光机：扫描式曝光机：Scanner 主要机台：主要机台： Cannon ES3 ,ASML /400 ,/750, /850,/1100工作光源区分：工作光源区分： 1 .I-Line 曝光机：曝光机：365nm (Hg-Arc) 主要机台：主要机台： Cannon iZ01 ,ASML /400, 2 . DUV 曝光机：曝光机：248nm ,193nm (Laser) 主要机台：主要机台： Cannon ES3 ,ASML /750, /850,/1100Cension Litho为什么要用ScannerCension LithoScanner 工作原理图工作原理图 1VariableNAREMAImaging OpticsInternalReticle MaskingQuartzRodMotorDriverZoomsigmalensesShutter/AttenuatorImaged Masking Blades ForMaximizing Usable Reticle AreaZoom Sigma Control for Highest Intensity & Throughput At All Illuminator SettingsAutomated Control of NA and Conventional/Annular Illumination For Optimum CD Control On Each Process LayerWaferReticleConventionalAnnularProjection lens entrance pupil filling3.0kW Hg arc lampEntrancePupilCension LithoScanner 工作原理图工作原理图 2Cension LithoScanner 和和Stepper 的异同的异同 1Cension LithoExposure scanSlit scanPrescanSlit scanScan directionREMA blades closeScanning exposure fieldREMA blades openStages and LS settleWhat is a Scan?A scan consists of four sections and something different happens during each part.Cension LithoLensIntegrator rodWafer directionReticle directionREMA bladeREMA bladeCell to be exposed.Start of the Slit ScanCension LithoIntegrator rodWafer directionReticle directionREMA bladeREMA bladeCell to be exposed.LensDuring the Slit ScanCension LithoIntegrator rodWafer directionReticle directionREMA bladeREMA bladeCell to be exposed.LensDuring the Slit Scan (2)Cension LithoIntegrator rodWafer directionReticle directionREMA bladeREMA bladeCell to be exposed.LensEnd of the Slit Scan, Start of Exposure ScanCension LithoCell to be exposed.Integrator rodWafer directionReticle directionREMA bladeREMA bladeLensDuring Exposure ScanCension LithoCell to be exposed.Integrator rodWafer directionReticle directionREMA bladeREMA bladeLensDuring Exposure Scan (2)Cension LithoCell to be exposed.Integrator rodWafer directionReticle directionREMA bladeREMA bladeLensDuring Exposure Scan (3)Cension LithoCell to be exposed.Integrator rodWafer directionReticle directionREMA bladeREMA bladeLensEnd of Exposure Scan, Start of Final Slit ScanCension LithoCell to be exposed.Integrator rodWafer directionReticle directionREMA bladeREMA bladeLensFinal Slit ScanCension LithoCell to be exposed.Integrator rodWafer directionReticle directionREMA bladeREMA bladeLensFinal Slit Scan (2)Cension LithoCell to be exposed.Integrator rodWafer directionReticle directionREMA bladeREMA bladeLensEnd of Slit ScanCension LithoIntegrator rodWafer directionReticle directionREMA bladeREMA bladeCell to be exposed.LensScan FinishedCension LithoScanner 和和Stepper 的异同的异同 2Cension Litho。