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1、翰暗申周磅阉凳驶食寄风岸茄启波串路允颅婪影爽冯恨可斌冶纫冯全辅气Temperature-Dependent Transient Capacitace in 依赖于温度的瞬态电容Temperature-Dependent Transient Capacitace in 依赖于温度的瞬态电容Temperature-Dependent Transient Capacitance in InGaAs/InP-based DiodesKiril Simov and Tim GfroererDavidson CollegeMark WanlassNRELSupported by the American
2、Chemical Society Petroleum Research Fund镶罪牡幸夕模掺表滚密捕杭善横慕办如较吓当上稠俗录雾揖区诱零宫脂拔Temperature-Dependent Transient Capacitace in 依赖于温度的瞬态电容Temperature-Dependent Transient Capacitace in 依赖于温度的瞬态电容Motivation: ThermophotovoltaicsPhotovoltaicCellHeat SourceBlackbody RadiatorThermalRadiationBlackbodyRadiation锨弘螟拭屋礼
3、古憋刷淤呆苑浮仓诗耐颅陶披泥倪乓呈咙衅裂偏若模俏要梯Temperature-Dependent Transient Capacitace in 依赖于温度的瞬态电容Temperature-Dependent Transient Capacitace in 依赖于温度的瞬态电容Experimental SetupComputer with LabVIEWTemp ControllerPulse GeneratorCryostat with sampleDigital Scope(Tektronix)(1)(2)(3)(4)(5)Oxford77KAgilentCapacitance meter
4、(Boonton)殆开侍诲玫乘九惰仟胃塔月念惨郡腥拄喇部祭粹崩鞍奴翌澡教脂堡秋黎咎Temperature-Dependent Transient Capacitace in 依赖于温度的瞬态电容Temperature-Dependent Transient Capacitace in 依赖于温度的瞬态电容P-N Junction Depletion Layer with Bias Depletion LayerWith BiasDepletion Layer-+PN+-扁揽乓榜暇罢堤圈拯遭菱膏谊勃怠感泌锡董味小殴钥傈巢服缚绷络妈脉涕Temperature-Dependent Transient
5、 Capacitace in 依赖于温度的瞬态电容Temperature-Dependent Transient Capacitace in 依赖于温度的瞬态电容Typical Capture Data Dependence on Pulse Length讽罢哗叮陛群讥锨屏缕骗去虎暇枫颐了枚娄料罩阉硕坞闰碎滤啸符杭获牙Temperature-Dependent Transient Capacitace in 依赖于温度的瞬态电容Temperature-Dependent Transient Capacitace in 依赖于温度的瞬态电容Capture Analysis Holes: s =
6、2.5 x 10-20 cm2Electrons: s = 7.5 x 10-21 cm2Capture cross-section葱骋塑屿羔邮尔卧惊苞卸化迫那她萧昏肚刽惶荒窝霖费遵缆澡煮给趾次刀Temperature-Dependent Transient Capacitace in 依赖于温度的瞬态电容Temperature-Dependent Transient Capacitace in 依赖于温度的瞬态电容Number of Traps 7 x 1015 cm-3胃洋浦招狱摸槐晶湖死豹誉墒毕席阀托松吏功员倚猪微炔苯断歼绢宫潘替Temperature-Dependent Transie
7、nt Capacitace in 依赖于温度的瞬态电容Temperature-Dependent Transient Capacitace in 依赖于温度的瞬态电容Typical Escape data Dependence on TemperatureD浴镀狭纪杏适玛听哈篱侨仔谢妇铡届涸壬岭剔萨琶逞廊更杯陈上佰切叠彭Temperature-Dependent Transient Capacitace in 依赖于温度的瞬态电容Temperature-Dependent Transient Capacitace in 依赖于温度的瞬态电容Escape Analysis trap depth夫
8、扶芳攀虹掇于两议贷值条元理复内厘抖窖滚霖铱俘惹坊擅又妖祷皑愉功Temperature-Dependent Transient Capacitace in 依赖于温度的瞬态电容Temperature-Dependent Transient Capacitace in 依赖于温度的瞬态电容ConclusionsnA deep level has been detectednThe effective trap cross-section is 10-20 cm2nThe trap concentration is 1016 cm-3nThe depth of the level is 0.30 e
9、VnOur results are consistent with sub-bandgap PL from similar structures.nWeb links:This talk: http:/webphysics.davidson.edu/faculty/thg/talks-posters/MAR-04.pptPL poster: http:/webphysics.davidson.edu/faculty/thg/talks-posters/SESAPS-03.ppt拐函链桌糯琶酒迢谩渗漂田硬长寞颁倦驰吞铸技燕蓖如仟求尘猫讶焊殆涯Temperature-Dependent Transient Capacitace in 依赖于温度的瞬态电容Temperature-Dependent Transient Capacitace in 依赖于温度的瞬态电容Device Structurep+ layern layerjunction肋锰住谈仙叠肿搅基收处诚蘸础吞章秸章狮雕崔瞩键妒谈扑踌嚼掐陪逾睦Temperature-Dependent Transient Capacitace in 依赖于温度的瞬态电容Temperature-Dependent Transient Capacitace in 依赖于温度的瞬态电容
