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1、CZ6 Basic flow introduction Process FeatureCZ6H process (1P3M)+option layer (MECAP, R-poly, Code P) 0.45um LV(5V) logic technologyCZ6H OTP (one time program) process (1P3M)+option layer (MECAP, R-poly) 0.45um LV(5V) logic technologyRecess LOCOS(700A)Polycide ex-situ Poly POCl3 Diffusion1500A+WSI 175
2、0A 12/Ti-silicide ProcessMetal1(4500Al/100Ti/300TiN), Metal2/3(6200Al/100Ti/300TiN), Metal4(9000Al/100Ti/300TiN), TTOPME(30000Al/100Ti/300TiN)MIP module(0.78fF/um2), HTO 400ARPOLY (500 ohm/square exsitu-Poly) module, 1K, 2K, 5K developedPassivation: CZ6H: 1200TEOS+10K SION +Polyimide CZ6H OTP: 1200T
3、EOS+10K UVSION21.WAFER START2.OXIDE WET ETCH (LAL800; 3MIN; S/D) - remove native OX3.AA_OX TOX (900C; 210A) - PAD OX to buffer Nitride stress4.AA NITRIDE DEP (760C; 1500A 4000 LOCOS)- Suppress OX lateral diffuse LOCOS grown5.AA PHOTO6.AA SIN ETCH7.PR ASH (250C)8.PR STRIP (SPM+CAPM; NORMAL)9.FIELD OX
4、IDATION (1100C; 4000A)10.OXIDE WET ETCH (DHF; 200A)11.SIN WET ETCH (65MIN)12.OXIDE WET ETCH (LL130; 2MIN)13.SAC0_OX (900C; 210A)-protect Si surface from PR contamination and serve as screen OX when N/P well IMPP SUBP SUBLOCOS3P SUB 5.PW_PH 6.PW_IMP P WELL IMPLANT 1 B300K100E3A63B32R00(Well Form) PWE
5、LL IMPLANT 2 B120K350E2T07W23R00(Channel Stop) PWELL IMPLANT 3 B070K150E2T07W23R00(APT IMP) P WELL IMPLANT 4 B030K175E2T07W23R00(VT adjust) 7.PR ASH 8. PR STRIP (SPM+CAPM; NORMAL) 1. NW_PH 2. NW_IMP NWELL IMP 1 P700K150E3A63B32R00 (Well Form) NWELL IMP 2 P260K120E2T07W23R00 (Channel Stop) NWELL IMP3
6、 P150K150E2T07W23R00 (APT IMP) NWELL IMP4 B015K185E2T07W23R00 (VT adjust) 3. PR ASH 4.PR STRIP (SPM+CAPM; NORMAL)P SUBN WELLP WELLP WELL41.OXIDE WET ETCH (LL130; 90SEC)2.GATE OXIDATION (850C; 155A) 8.CAP TOP WSI DEP(SPUTTER:2000A)3.GATE POLY DEP (620C; 1500A; O2 LEAK) 9.CAP TOP OXIDE DEP (APOX; 1200
7、A4.PHOSPHORUS DIFFUSION 10. CAP PHOTO 5.PSG REMOVE (LL130 4MIN+H2O2 4MIN) 11.CAP_ET6.GATE WSI DEP (SPUTTER:1750A) 12.CAP PR ASH 7.HTO DEP (400A) 13. PR STRIP (SPM+HAPM; SILICIDE) P SUBP SUBN WELLP WELLP WELLMCAP514.P1 PHOTO15. POLY ETCH16.NLDD IMPLANTP SUBP SUBN WELLP WELLP WELLNMOS6P SUBP SUBN WELL
8、P WELLP WELL1.PLDD PHOTO2.PLDD IMPLANT3. PR STRIP4.SPACER DEP (NSG; 2000A)5.ANNEAL (950C;30M)6.SPACER ETCH7. SAC3 OXIDE DEP7P SUBP SUBN WELLP WELLP WELL1. NP_PH3. NP_IMP N+ IMPLANT 1 P100K280E3T45W23R12 N+ IMPLANT 2 P040K120E4T00W23R00 N+ IMPLANT 3 A070K200E5A00B004. PR STRIP (SPM; SILICIDE)5. PP_PH
9、6. PP_IMP P+ IMPLANT 1 B030K200E3T00W23R00 P+ IMPLANT 2 F050K500E5A00B007. PR STRIP (SPM; SILICIDE)8. ANNEAL (850C; 50M)8 1.CODE_PH 6.SALICIDE SPUTTER (TI 330A)2.CODE IMPLANT P360K300E3A00B00R00 7. RTA (700C; 30S)3.PR STRIP (SPM; SILICIDE) 8. BRANSON TREATMENT (CAPM)4.PRE AMORPHOUS IMPLANT 9. RTA (8
10、40C; 10S)5.OXIDE WET ETCH (LAL30; 3MIN10SEC; SILICIDE) 10. BRANSON TREATMENT (CAPM)P SUBP SUBN WELLP WELLP WELLOTP cell 91.ILD OXIDE1 DEP (APOX; 1500A) 7. ILD BPSG DEP (B9.8; P5.4; 13700A)2.POLY2 DEP 8. PRE-BPSG FLOW (HAPM; SILICIDE)3.POLY2 IMP 9. BPSG FLOW (800C; 30S)4.POLY2 PHOTO 10. SIN WET ETCH
11、(15MIN)5.P2 ETCH 11. SLN244 PRE CMP O2 TREATMENT6. ILD DEP (SIN 200A) 12. ILD CMPP SUBP SUBN WELLP WELLP WELLRPOLY101. CT PHOTO 6. CTNP_PH 2. CT PHOTO UV CURE 7. CTNP_IMP P070K200E5A00B003. CT ETCH 8. CT NPLUS PR ASH (140C)4. PR STRIP (SPM+CAPM; SILICIDE) 9. PR STRIP (SPM+CAPM; SILICIDE)5. CTPP_IMP
12、F070K500E4A00B00 10. RTA (800C; 10S)P SUBP SUBN WELLP WELLP WELLCT11P SUBP SUBN WELLP WELLP WELL1.CT GULE SPUTTER (TI 300A; TIN 500A) 5.M1 DEP (AL 4500A ;TIN 600A)2.CT GLUE ANNEAL (690C; 30S) 6. M1 PHOTO3. CT W CVD DEP (475C; 5000A) 7. M1 ETCH 4.CT W ETCH BACK 8. SOLVENT STRIP (SST-A2; 10MIN) 12P SU
13、BP SUBN WELLP WELLP WELL1. IMD1 DEP1 (PETEOS; 1200A)2. IMD1 USG DEP (O3TEOS; 4000A) 3. IMD1 DEP2 (PETEOS; 17000A)4. IMD1 CMP5. ALLOY (400C; 10M; H2-N2)M113P SUBP SUBN WELLP WELLP WELL1.VIA1 PHOTO 7. VIA1 W CVD DEP (5000A)2.VIA1 ETCH 8. CT W ETCH BACK3.VIA1 PR ASHING (140C) 9. M2 DEP (TIN 600A; AL 62
14、00A)4.SOLVENT STRIP (N311; 10MIN) 10. M2 PHOTO5.VIA1 GLUE LAYER SPUTTER (TI 300A; TIN 1000A) 11. M2 ETCH6. RTA (700C; 30S) 12. SOLVENT STRIP (SST-A2; 10MIN)M2141.IMD2 DEP1 (PETEOS; 1200A)VIA1 ETCH 10. VIA2 GLUE LAYER SPUTTER (RF300;TI 300A; TIN 1000A)2.IMD2 USG DEP (O3TEOS; 4000A) 11. VIA2 W CVD DEP
15、 (5000A)3.IMD2 DEP2 (PETEOS; 17000A) 12. VIA2 W ETCH BACK4.IMD2 CMP 13. TM SPUTTER (TIN 600A; 6200A)5.ALLOY (400C; 10M; N2) 14.TM PHOTO6.VIA2 PHOTO 15. TM ETCH7.VIA2 ETCH8.VIA2 PR ASHING (140C)9.SOLVENT STRIP (N311; 10MIN)P SUBP SUBN WELLP WELLP WELLTM151.PASSIVATION DEP (PETEOS 1200A) 2.ALLOY (400C; 20M; H2-N2)3.PA PE SION DEP4.PA PHOTO5. PA OXIDE ETCH6.PA PR ASH7.SOLVENT STRIP (N311; 10MIN; HYBRID)P SUBP SUBN WELLP WELLP WELLPAD16Thank you 17
