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1、40 GHz MMIC Power Amplifier in InP DHBT Technologyhttp:/ GHz MMIC Power Amplifier in InP DHBT Technology40 GHz MMIC Power Amplifier in InP DHBT TechnologyOutlineLEC 2002UCSBIntroductionTransferred-Substrate Power DHBT TechnologyCircuit DesignResultsConclusion腋砸卞弦迈廷望触糟门笔励跺受涂标硅屈寝麻瞄沉梗逞塘嫁盯丈瑶揪舶袭40 GHz MM
2、IC Power Amplifier in InP DHBT Technology40 GHz MMIC Power Amplifier in InP DHBT TechnologyIntroduction LEC 2002Applications for power amplifiers in Ka bandsatellite communication systems wireless LANs local multipoint distribution system personal communications network links and digital radio MMIC
3、Amplifiers in this frequency bandKwon et. al., IEEE MTT, Vol.48, No. 6, June. 2000 3 stage HEMT, class AB, Pout=1 W, Gain=15 dB, PAE=28.5%, size=9.5 mm2 This Work: Single stage cascode InP DHBT, class A, Pout=50 mW, Gain=7 dB, PAE=12.5% size=0.42 mm2 饮嘻警鹿哄庸涧水莎耘芭确寻蒂画汤做没宫嫡鹰可脆宠嫉琐骨刺接荡膀脂40 GHz MMIC Power
4、 Amplifier in InP DHBT Technology40 GHz MMIC Power Amplifier in InP DHBT Technology Transferred-Substrate HBT MMIC fabrication 罢慌魄友奥柠妆疮衬花码持绚浙佐拧澈乐酷孵及贼影茂笼摧求实落朴虏摩40 GHz MMIC Power Amplifier in InP DHBT Technology40 GHz MMIC Power Amplifier in InP DHBT TechnologyMBE DHBT layer structure Band profile at
5、Vbe=0.7 V, Vce=1.5 VInP 8E17 Si 300 emitter InGaAs 1E19 Si 500 Grade 1E19 Si 200 InP 1E19 Si 900 Grade 8E17 Si 233 Grade 2E18 Be 67 InGaAs 4E19 Be 400 Grade 1E16 Si 480 InP 2E18 Si 20 InP 1E16 Si 2500 Multiple stop etch layersBuffer layer 2500 base collector substrate400 InGaAs base3000 InP collecto
6、r行忆卧纹菲渭哟枢齐虎仰链炔脆缔镰神财昏矿镐虏茨焦濒总孕滚策醋俩阂40 GHz MMIC Power Amplifier in InP DHBT Technology40 GHz MMIC Power Amplifier in InP DHBT TechnologySmall-area T.S. DHBTs have high cutoff frequencies. UCSBSangmin LeeBVCEO = 8 V at JE =0.4 mA/m2fmax = 462 GHz, ft = 139 GHzVce(sat) 1 V at 1.8 mA/m2舟嗓岛侩榔溪粮扯茵煞疏弓劝桔孰连馒赶图
7、佃某盒汰马求唾拢页佬利砧帝40 GHz MMIC Power Amplifier in InP DHBT Technology40 GHz MMIC Power Amplifier in InP DHBT TechnologyDesign difficulties with large-area power DHBTsUCSBYun WeiARO MURI Thermal instability further increasescurrent non-uniformityIcTemperaturecollectorSiNemittercontactbasepolyBCBBCBMetal st
8、ripAu ViaSteady state current and temperature distribution when thermally stablebase feed sheet resistance: s= 0.3 / significant for 8 um emitter finger lengthLarge Area HBTs: big Ccb, small Rbb, even small excess Rbb substantially reduces fmax0.08 mEmitter contactMetal1Base contactCurrent hogging i
9、n multi-finger DHBT:Distributed base feed resistance:IcTemperatureK330 GHz, Vbrceo7 V,Jmax1x105 A/cm2100 mA, 3.6 Volt device2nd-level base feed metalBallast resistoremittercollectorFlip chipYun WeiARO MURI腔蕾祁臀允逼似淌脯店称骤蓑镜层经烘测官净撞垛烁衷笨堑伤冶嫁俞卵来40 GHz MMIC Power Amplifier in InP DHBT Technology40 GHz MMIC P
10、ower Amplifier in InP DHBT TechnologyUCSBHBT power amplifier-why cascode?ARO MURIYun WeiIB1* R. Ramachandran and A.F. Podell Segmented cascode HBT for microwave-frequency power amplifiers Advantages:common-base stage has large Vce large output power common-emitter-stage has low Vce small Rballast re
11、quired maintains large available power gain Disadvantageinductance of base bypass capacitoreven small L greatly degrades gain Vce1Vce2+-+-IE1RballastIE2radial stub capacitor出碟健焚务萧购菜禹锋串庙殷控踢形消汝储涪谍陵她栅鞘限歼躇谰程融元40 GHz MMIC Power Amplifier in InP DHBT Technology40 GHz MMIC Power Amplifier in InP DHBT Techn
12、ologyUCSBInP TS DHBT Power Amplifier DesignARO MURIYun WeiOptimum admittance matchInput matchLow frequency stabilization8 finger cascodeInter-stage DC bias/4/4Imax0.00.51.01.52.02.53.03.54.04.55.05.56.06.57.0Vce (V)0.0000.0020.0040.0060.0080.0100.0120.0140.0160.018Ic (A)VCE_BRVsat奔澈始襟缺犬算刁章案爷冬余眷甄垦沉湍余
13、考戴碑铲逛返墓容刽迭魁找镇40 GHz MMIC Power Amplifier in InP DHBT Technology40 GHz MMIC Power Amplifier in InP DHBT Technology40 GHz 128 m2 power amplifierUCSBcascode PA0.6mm x 0.7 mm, AE=128 m mm2 ARO MURIf0=40 GHz BW3dB=16 GHz GT=7 dB P1dB=14 dBm Psat=17 dBm 4dB gainYun Wei溪猜骤赘奏碟矗缠凛摄腑允答瑚黄咀直菌郁腿构货暮溪犹呕苑赊粉宫摩渍40 GH
14、z MMIC Power Amplifier in InP DHBT Technology40 GHz MMIC Power Amplifier in InP DHBT TechnologyUCSBYun Weicommon base PA0.5mm x 0.4 mm, AE=128 m mm2 ARO MURIBias: Ic=78 mA, Vce=3.6 V f0=85 GHz BW3dB=28 GHzGT=8.5 dBP1dB=14.5 dBmPsat=16dBm, associated gain: 4.5 dBY. Wei et al, 2002 IEEE MTT-S symposiu
15、mW band power amplifiers in TS InP DHBT technology街佐诗痹源蔓摇诊帛绊舀隋陪喂哨员烩迄伙陵俐库梧喜饲擦卑秃痈利娟曰40 GHz MMIC Power Amplifier in InP DHBT Technology40 GHz MMIC Power Amplifier in InP DHBT TechnologyW band power amplifiers in TS InP DHBT technologyUCSBYun Weicascode PA0.5mm x 0.4 mm, AE=64 m mm2 ARO MURIBias: Ic=40
16、mA, Vce=3.5 V f0=90 GHzBW3dB=20 GHzGT=8.2 dBP1dB=9.5 dBmPsat=12.5 dBm, associated gain: 4 dBY. Wei et al, 2002 IEEE MTT-S symposium患睡隆哦头莉她竹宰欠浦但只堡撂淋畅劳宗歪翌入悟砌辉碴愤弯蹲繁中泻40 GHz MMIC Power Amplifier in InP DHBT Technology40 GHz MMIC Power Amplifier in InP DHBT TechnologyContinuing workHigher-current DHBTs f
17、or increased mm-wave output power250 GHz fmax, Ic,max=240 mA, thermally stable at 200 mA bias at Vce=3.2 Volts suitable for W-band 150 mW power amplifiersW-band DHBT power amplifiersdesigns for 100 mW saturated output power now being testedResults to be reported subsequentlyUCSBYun WeiLEC 2002嘘腺莆夜氧挎
18、至惊坍误哭燎锯角抡吐傲坐雏届遂战箕戊俯马网爷矫贵短匣40 GHz MMIC Power Amplifier in InP DHBT Technology40 GHz MMIC Power Amplifier in InP DHBT TechnologyConclusions 40 GHz MMIC power amplifier in InP DHBT technology 7 dB power gain and 14 dBm output power at 1 dB compression. 17 dBm (50 mW) saturated output power 12.5% peak p
19、ower added efficiency Future work: higher power DHBT power amplifiers at W-band and abovelumped 4-finger topology, longer emitter fingers, power combiningG-band (140-220 GHz) DHBT power amplifiersAcknowledgementWork funded by ARO-MURI program under contract number PC249806. UCSBYun WeiLEC 2002盯藤灸版喧坟汰茨找纺橱醛蔑慑退傻稗岛话吗蹭办突恋跪州喝犯累笛突傲40 GHz MMIC Power Amplifier in InP DHBT Technology40 GHz MMIC Power Amplifier in InP DHBT Technology
