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1、MichaelquirkMichaelquirk半导体制造技半导体制造技术附录图解读术附录图解读Definitions of Safety TermsHazardous:Any chemical or substance that has adverse effects on the health or safety of people.Toxic: Any chemical or substance that seriously damages biological tissue. Examples are phosphine and arsine.Flammable:Any liquid
2、or gas that is capable of igniting into fire.Pyrophoric:Any material that ignites spontaneously in air below 55C (130F). An example is silane.How Chemicals Enter the Body1. Contact with skin or eyes.Wear safety glasses and no contact lens.Use goggles to protect normal eyewear.Wear the appropriate gl
3、ove type for the job. Chemicals absorbed through the pores of the skin can enter the body and cause damage to vital organs.Use full face shield when pouring or mixing chemicals.How Chemicals Enter the Body2. Ingestion (swallowing).Certain toxic chemicals can be fatal when even a minute amount in ing
4、ested.Never bring food or drink into areas where chemicals are being used. It is good practice to wash hands with soap and water when leaving the workplace.How Chemicals Enter the Body3. Inhalation.Breathing toxic gases may result in burns or damage to lung tissue and can pass into the bloodstream,
5、damaging other organs.The workplace must be well-ventilated. If unusual odors are detected, notify someone in charge and leave the area. Sound an alarm if appropriate.Common Information in MSDSChemical nameDate preparedPEL & TLVHealth effectsPhysical/Chemical characteristicsFire/Explosion dataReacti
6、vity hazard dataHealth hazard dtaCommon Terms Used in an MSDSTable A.1Common Terms Used in an MSDSTable A.1 (continued)Wet Chemical SafetyWhen working with corrosives:Clearly identify all chemicals before use (e.g., HF looks like H2O). Do not mix incompatible chemicals (see Table A1.3).Wear eye prot
7、ection and a face shield at all times.Wear body and arm protection, including acid-resistant apron and sleeve guards.Wear gloves and boots suitable for the type of chemical.Do not breathe vapors. Use only under a fume hood.Store and use HF only in plastic containers HF attacks glass.Incompatible Che
8、micalsTable A.2Precautions When Working With SolventsWear eye protection (face masks), appropriate gloves and protective clothing.Avoid breathing vapors. Use only under a hood or in a well-ventilated area.Keep solvents away from heat, sparks and open flame. Know the fire extinguisher location.Do not
9、 pour solvents into acid sinks or drains. Pour solvents into waste solvent containers.Keep solvents in a flammable materials storage cabinet.Do not mix acid waste with solvent waste - could produce dangerous exothermic reaction.Special Precautions with Chemicals(Refer to p. 606 for details)Hydrofluo
10、ric Acid (HF)Sulfuric Acid (H2SO4)Chemical HazardsGas Detection and MonitoringSome recommended safety procedures:Conduct formal safety reviews and inspectionsImplement regular gas safety training programsLimit the number of cylinders stored on-site through just in time deliverGas Detection and Monit
11、oring(continued)Important gas system design features:Select components and materials suitable for reactive gasesDouble containment for gas lines, where appropriateGood ventilation around pipingLeak testing prior to useAppropriate use of check valves and flow limiting orificesAutomatic shutoff valves
12、Pressure and vacuum-cycle purge on process stationsBackup power for fire protection and exhaust systemsGas detection and alarm system appropriately placed, as defined in the Uniform Fire Code and local ordinancesSteel gas cabinets with locks and external emergency shutoff valvesCommonly Used Fab Che
13、micals and Their Safety HazardsNote: Process applications are listed here only for reference and are described in the appropriate chapters.Table A.3A: annealingE/C: etch/cleanCVD: chemical vapor depositionI: ion implantCG: crystal growthP/B: purge/blanketDi: diffusionS: sputteringDo: dopingTO: therm
14、al oxidationTLV-TWA: Threshold limit values time weighted average. Nearly all workers could be repeatedly exposed, day after day, without an adverse affect.TLV-STEL: Threshold limit values short term exposure limit. Exposures at the STEL should not be longer than 15 minutes, and should not be repeat
15、ed more than 4 times per day.IDLH: Immediately dangerous to life and health.Commonly Used Fab Chemicals and Their Safety HazardsTable A.3 (continued)Commonly Used Fab Chemicals and Their Safety HazardsTable A.3 (continued)Other Safety Hazards(Refer to p. 608-609 for details.)Photo Light Source Safet
16、yIon Implantation SafetyChemical RecyclingSemiconductor Semiconductor Manufacturing TechnologyManufacturing TechnologyMichael Quirk & Julian Serda Michael Quirk & Julian Serda October 2000 by Prentice HallOctober 2000 by Prentice HallAppendix BAppendix BContamination Controls Contamination Controls
17、in Cleanroomsin CleanroomsEvolution of Chip Feature Sizes and Contamination ControlTable B.1Human ContaminationSaliva and Lung ParticlestalkingsneezingContents of Saliva Dissolved mineralsSaltsElements (Na, Ca, Fe, Mg, Cl, Al, S, K, P)Other Body ContaminantsEvolution of Federal Standard 209 Specific
18、ations for Cleanliness of AirTable B.2Metric Definitions of Airborne Particulate Cleanliness Classes Per Federal Standard 209ETable B.3Cleanroom Glove CharacteristicsTable B.4Specification for DI WaterTwo primary specifications for electronic grade DI water:American Society for Testing and Materials
19、 (ASTM)ASTM D-19 Standard Guide for Electronic Grade Wafer D512-90 (1990)Semiconductor Equipment and Materials InternationalSEMI Suggested Guidelines for Pure Water for Semiconductor Processing (1989)Charge Generation Capability of Common MaterialsFigure B.1Positive (+)Negative (-)AirHuman skinGlass
20、, quartzAluminumPaperHard rubberCopperPolyester (mylar)Polystyrene (styrofoam)PVC (vinyl)TeflonSilicone rubberElectrostatic Voltages at Different Relative Humidity LevelsTable B.5Semiconductor Semiconductor Manufacturing TechnologyManufacturing TechnologyMichael Quirk & Julian Serda Michael Quirk &
21、Julian Serda October 2000 by Prentice HallOctober 2000 by Prentice HallAppendix CAppendix CUnitsUnitsThe International System of Units (SI)Table C.1SI PrefixesTable C.2Unit ConversionsA meter is the basis for metric units of measure.1 = 10-10 m1 nm = 10-9 m1 mm = 10-6 m1 mm = 10-3 m1 cm = 10-2 mMetr
22、ic Equivalents to the AngstromThe angstrom is a common thickness unit of measure.1 = 10-1 nm1 = 10-4 mm1 = 10-8 cm1 = 10-10 mConversion Between Common and SI UnitsTable C.3Semiconductor Semiconductor Manufacturing TechnologyManufacturing TechnologyMichael Quirk & Julian Serda Michael Quirk & Julian
23、Serda October 2000 by Prentice HallOctober 2000 by Prentice HallAppendix DAppendix DColor as a Function of Color as a Function of Oxide ThicknessOxide ThicknessColor Chart for Thermally Grown Oxide FilmsTable D.1Color Chart for Thermally Grown Oxide FilmsTable D.1 (continued)Semiconductor Semiconduc
24、tor Manufacturing TechnologyManufacturing TechnologyMichael Quirk & Julian Serda Michael Quirk & Julian Serda October 2000 by Prentice HallOctober 2000 by Prentice HallAppendix EAppendix EOverview of Photoresist Overview of Photoresist ChemistryChemistryDiagram and Symbol of Simple Benzene Aromatic
25、RingFigure E.1Carbon atomHydrogen atomBenzene aromatic ringRedrawn from S. Campbell, The Science and Engineering of Microelectronic Fabrication (New York: Oxford University Press, 1996), p. 183.Aromatic CompoundsTolueneNaphthaleneCHHHFigure E.2Redrawn from S. Campbell, The Science and Engineering of
26、 Microelectronic Fabrication (New York: Oxford University Press, 1996), p. 183.Polyethylene Polymer and Cross LinkingCHHCHHCHHCHHCHHCHHCHHPolyethylene polymerCHHCHHCHHCHCHHCHHCHHHCCHHCHHCHHCHHCross linkingCHHFigure E.3Redrawn from S. Campbell, The Science and Engineering of Microelectronic Fabricati
27、on (New York: Oxford University Press, 1996), p. 184.Common Photoactive Compound of Diazonaphthoquinone (DNQ)Figure E.4ACCH3CH3SO2ON2Redrawn from S. Campbell, The Science and Engineering of Microelectronic Fabrication (New York: Oxford University Press, 1996), p. 185.Common Photoactive Compound of D
28、iazonaphthoquinone (DNQ)CCH3CH3SO2ON2R =ON2RFigure E.4BRedrawn from S. Campbell, The Science and Engineering of Microelectronic Fabrication (New York: Oxford University Press, 1996), p. 185.Novolak PolymerCH3HOCH2HOCHCH2CH3CHCH2Figure E.5Redrawn from S. Campbell, The Science and Engineering of Micro
29、electronic Fabrication (New York: Oxford University Press, 1996), p. 185.Reactions of DNQ After Exposure to UV LightFigure E.6+ UV LightRN2OPhoto active componentROHCO+N2Dissolution enhancerThrough a cascade of reactions involving lightRedrawn from S. Campbell, The Science and Engineering of Microel
30、ectronic Fabrication (New York: Oxford University Press, 1996), p. 185Chemical Amplification of Photoresist with tBOC Deprotection ReactionFigure E.7Redrawn from T. Ueno, “Chemistry of Photoresist Materials”, Edited by J. Sheats and B. Smith, Microlithography, Science and Technology (New York: Marce
31、l Dekker, 1998), p. 465. Adapted by S. PostnikovS+ X + UV lightH+ XAcid catalystOnium salt (CH2 CH) nHeatOH+ CO2PHSOO C O C CH3CH3CH3H+Protecting group (CH2 CH) ntBOCIsobutelene (escapes polymer)H+ + C CH3CH3CH2+Semiconductor Semiconductor Manufacturing TechnologyManufacturing TechnologyMichael Quirk & Julian Serda Michael Quirk & Julian Serda October 2000 by Prentice HallOctober 2000 by Prentice HallAppendix FAppendix FEtch ChemistryEtch ChemistryEtch Chemistries of Different Etch ProcessesY. Lii, “Etching,” ULSI Technology, ed. C. Chang and S. Sze (New York: McGraw-Hill, 1996), p. 354. 结束结束
