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1、1These miniature surface mount MOSFETs utilize a high cell density trench process to provide low rDS(on)and to ensure minimal power loss and heat dissipation. Typical applications are DC-DC converters and power management in portable and battery-powered products such as computers, printers, PCMCIA c
2、ards, cellular and cordless telephones.VDS (V)rDS(on) ()ID (A)0.700 VGS = 10 V1.11.200 VGS = 5.5V0.8PRODUCT SUMMARY150N-Channel 150V (D-S) MOSFETLow rDS(on)provides higher efficiency and extends battery lifeLow thermal impedance copper leadframeTSOP-6 saves board spaceFast switching speedHigh perfor
3、mance trench technologyNotesa.Surface Mounted on 1” x 1” FR4 Board.b.Pulse width limited by maximum junction temperatureSymbol Maximum UnitsVDS150VGS20Continuous Drain CurrentaTA=25oCID1.1IDM10IS1.1APower DissipationaTA=25oCPD1.15WTJ, Tstg-55 to 150oCOperating Junction and Storage Temperature RangeC
4、ontinuous Source Current (Diode Conduction)aABSOLUTE MAXIMUM RATINGS (TA = 25 oC UNLESS OTHERWISE NOTED)ParameterPulsed Drain CurrentbVGate-Source VoltageDrain-Source VoltageASymbolTypMaxt = 10 sec93110Steady State130150THERMAL RESISTANCE RATINGSMaximum Junction-to-AmbientaoC/WRthJAParameterTSOP-6To
5、p ViewDDSDDG123654D1S1G1N-Channel MOSFETF Si 34 4 0DV/ MC34 4 0DV2Notesa.Pulse test: PW = 300us duty cycle = 2%.b.Guaranteed by design, not subject to production testing.MinTypMaxGate-Threshold VoltageVGS(th)VDS = VGS, ID = 250 uA1.0VGate-Body LeakageIGSSVDS = 0 V, VGS = 8 V100nAVDS = 120 V, VGS = 0
6、 V1VDS = 120 V, VGS = 0 V, TJ = 55oC10On-State Drain CurrentAID(on)VDS = 5 V, VGS = 10 V10AVGS = 10 V, ID = 1.1 A700VGS = 5.5 V, ID = 0.8 A1200Forward TranconductanceAgfsVDS = 10 V, ID = 1.1 A11.3SDiode Forward VoltageVSDIS = 1.6 A, VGS = 0 V0.75VTotal Gate ChargeQg7.0Gate-Source ChargeQgs1.1Gate-Dr
7、ain ChargeQgd2.0Turn-On Delay Timetd(on)8Rise Timetr24Turn-Off Delay Timetd(off)35Fall-Timetf10mParameterLimitsUnitVDD = 10 V, RL = 15 , ID= 1 A, VGEN = 4.5 VVDS = 10 V, VGS = 5.5 V, ID = 1.1 AnCnsDynamicbSPECIFICATIONS (TA = 25oC UNLESS OTHERWISE NOTED)uAIDSSZero Gate Voltage Drain CurrentStaticTes
8、t ConditionsSymbolDrain-Source On-ResistanceArDS(on)FREESCALE reserves the right to make changes without further notic e to any products herein. freescale makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does freescale assume an
9、y liability arising ou t of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in freescale data sheets and/or specifications can and
10、 do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customers technical experts. freescale does not convey any license under its patent rights nor the rights of others. freesca
11、le products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the freescale product could create a situation where per
12、sonal injury or death may occur. Should Buyer purchase or use freescale products for any such unintended or unauthorized application, Buyer shall indemnify and hold freescaleand its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expen
13、ses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that freescale was negligent regarding the design or manufacture of the part. freescale is an Equal Opportunity/Affirmative Action Employer.F Si 34 4 0DV/ MC34 4 0DV3Package InformationTSOP-6: 6LEADF Si 34 4 0DV/ MC34 4 0DV
