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1、Lecture 4Micro-process technologyEtching process清華大學材料科學與工程系廖建能 教授1Etching processnBasic Concepts of EtchingnWet EtchingnSpecific Wet Etches Silicon Silicon Dioxide AluminumnDry (Plasma) Etch Mechanisms Chemical Etching Physical Etching (sputtering) Ion Enhanced Etching nPlasma Reactors nDry Etch Ch
2、emistry 2IntroductionnEtching: using photoresist or SiO2/Si3N4 as mask layer to selectively remove part of the materialsnEtching is done either in “dry or “wet methodsn- Wet etching uses liquid etchants with wafers immersed in etchant solution. n- Dry etching uses gas phase etchants in a plasma. Wet
3、 Etch: chemical process only Dry Etch: chemical and physical (sputtering) process 3Basic ConceptsnEtching is consisted of 3 process: Mass transport of reactants (through a boundary layer) to the surface to be etched Reaction between reactants and the film(s) to be etched at the surface Mass transpor
4、t of reaction products from the surface through the surface boundary layer 4Types of Etching ProcessesnIsotropic (等向性):Best to use with large geometries, when sidewall slope does not matter, and to undercut the maskQuick, easy, and cheapnAnisotropic (非等向性):Best for making small gaps and vertical sid
5、ewallsTypically more costly5Wet EtchingnDiffusion reactive species from the liquid bulk through the boundary layer to the surface of wafernReaction of species at the surface to form solvable speciesnDiffuse reaction products away from the surface through the boundary layer into the bulk of the liqui
6、dAdvantages: High selectivity because it is based on chemical processesDisadvantages: Isotropic, poor process control and particulates 6Wet Etching 2nThe etch rate can be controlled by any of the three serial processes nPreference is to have reaction rate controlled process because Etch rate can be
7、increased by temperature Good control over reaction rate temperature of a liquid is easy to control nMass transport control will result in non-uniform etch rate Boundary layer un-even nEtchant is stirred to minimize boundary layer and thus make etching reaction rate controlled nEtch rate is a functi
8、on of temperature, specific reaction and concentration 7Isotropic Etching (Silicon dioxide)nEtch is isotropic and easily controlled by dilution of HF in H2O nThermal oxide etches at 1200 /min in 6H2O:1HF 300 /sec or 1 mm/min in 49 wt% HF nFaster etch rate for doped or deposited oxide nHigh Etch Sele
9、ctivity (SiO2/Si) 100 nBuffered HF (BHF) or Buffered oxide etchant (BOE) provides consistent etch rates In regular HF etches, HF is consumed and the etch rate drops Serious process control issue HF buffered with NH4F to maintain HF concentration 6 NH4F:1HF NH4FNH3+ HF8Isotropic Etch (Silicon Nitride
10、)9Isotropic Etch (Silicon)nSilicon is etched by nitric acid and hydrofluoric acid mixturesnUse oxidant to oxidize silicon to form silicon dioxide followed by HF etch of silicon dioxideOxidation: HNO3 SiO2 Reduction: HF SiF6nExcess nitric acid results in a lot of silicon dioxide formation and etch ra
11、te becomes limited by HF removal of oxide (Polishing)10Isotropic Etch (Silicon)nDoping selective etches developed for detecting pn junctions and for etch stops 1HF:3HNO3:8CH3COOH etches heavily doped silicon (1019cm-3) but does not etch lightly doped silicon nRheavy-doping= 15*Rlight-doping Ethylene
12、diamine-pyrocatechol-water etches lightly doped silicon but does not attack heavily doped p-layers nDefect Selective Etch form etch pits at dislocations, stacking faults and precipitates Defect density observable by optical microscopy after staining 11Isotropic Etching (Aluminum)nAluminum etches in
13、water, phosphoric, nitric and acetic acid mixtures nConverts Al to Al2O3with nitric acid (evolves H2) nDissolve Al2O3 in phosphoric acid nGas evolution leading to bubbles nLocal etch rate goes down where bubble is formed Non-uniformity 50H3PO4:20H2O:1HNO3:1CH3COOH12Anisotropic Etching (Silicon)nOrie
14、ntation selective etch of silicon occur in hydroxide solutions because of the close packing of some orientations relative to other orientations Density of planes : R(111) R(110) R(100) n direction etches faster than direction R(100)= 100 R(111) It is reaction rate limited 13Summary of Wet etchingWet
15、 etches are selective isotropic and fast, usually reaction rate limited 14Dry (Plasma) EtchingnDirectional etching due to presence of ionic species in plasma and biased electric fieldnTwo components existed in plasma- Ionic species results in directional etching- Chemical reactive species results in
16、 high etch selectivitynControl of the ratio of ionic/reactive components in plasma can modulate the dry etching rate and etching profile 15RF Plasma PhysicsnElectric field applied across two electrodes alternately at radio frequency nPlasma are ionized atoms / molecules and free electrons nVoltage b
17、ias develops between the plasma and electrodes because of the difference in mobilities (masses) of electrons and ions nPlasma is positively biased with respect to the electrodes Normal plasma condition16RF Plasma Physics 217Plasma Etching ProcessnChemical etching: free radicals react with material t
18、o be removed nPhysical etching or sputtering: ionic species bombard the materials to be removed nIon enhanced etching: combined chemical and physical process results in higher material removal rate than each process alone 18nFree radicals are electrically neutral species that have incomplete outer s
19、hells e.g. CF3and F nFree radicals react with film to be etched and form volatile by-products nMass transport of reactive species from the gas stream to the reaction surface, reaction takes place at the surface, followed by mass transport of reaction products back to the gas streamnOxygen is added t
20、o CF4 plasma to increase the amount of reactive F species (O reacts with CF3and CF2 and hence reduce the recombination rate of F)Chemical etch19Chemical EtchnPure chemical etch is isotropic or nearly isotropicnThe etching profile depends on arrival angles and sticking coefficients of free radicalsn
21、Free radicals in plasma systems have isotropic arrival angles and low sticking coefficients 20Physical EtchnIonic species are accelerated towards each electrode by alternating electric field nThe ionic species such as Cl2+, CF4+, CF3+(or Ar+ in a purely physical sputter etch) strike the wafer surfac
22、e and remove the material to be etched nPhysical etch is directional and non-selective (sputter yield does not vary much for different materials)21Ion Enhanced Etch (IEE)nIEE is an anisotropic and highly selective etching process nIon bombardment can enhance one of the following steps during chemica
23、l etch: surface adsorption, etching reaction, by-product formation, by-product removal (inhibitor layer) and removal of un-reacted etchants nExample: formation of inhibitor layer which consists of polymers formed from C2F6 during reactive ion etch of SiO2 22Etching profile High inhibitor deposition
24、rateLow inhibitor deposition rate23Plasma Reactors (Barrel Etchers)nPurely chemical etch selective and isotropic nChemical reactive species transport to wafer surface through diffusion process poor uniformity due to long diffusion pathnMainly used for PR removal 24Parallel Plate EtchersnBoth chemica
25、l reaction and physical sputtering process occurnPlasma mode: pressure 0.1 1 Torrvoltage drop10 100 eVnReactive ion etch mode:pressure 10 100 mTorrvoltage drop 100 700 eV 25High Density Plasma SystemInductively coupled PlasmaElectron Cyclotron Resonance Plasma Plasma density 1011 1012 ions/cm3; Low
26、operation pressure 1 10 mTorrIndependent control of RF bias (ion energy) and ion density (plasma density) 26Sputter etch & Ion - MillingnPurely physical sputtering process poor selectivity and high anisotropicnHigh ion energy ( 500 eV)nIssues:- radiation damage- re-deposition- faceting (sputter yiel
27、d is a function of incident angle)nFocused ion beam can be used to etch very small areas for wafer repair27Plasma etching mechanism28Plasma etching mechanismChemical ProcessPhysical ProcessWet etchingPlasma etchingReactive Ion etchingHigh density plasma etchingSputter etching & ion millingpressurese
28、lectivityenergyanisotropicity29Types of Dry Etching Processes30Plasma Etch Methods for Various Films nChoice of reactant gasses to etch each specific film Ability to form volatile by-products Etch selectivity to resist and underlying films Anisotropicity nBoiling points are good indicators of volati
29、lity of species 31Dry Etch Chemistries32Plasma Etch Methods for Various Films nMost reactant gasses contain halogens Cl, F, Br, or I nExact choice of reactant gasses to etch each specific film depends on Ability to form volatile by-products Etch selectivity to resist and underlying films Anisotropic
30、ity nBoiling points are good indicators of volatility of species Lower boiling point, higher tendency to evaporate 33Plasma Etching (Silicon dioxide)nCF4 etch is isotropic; Anisotropic etching can be achieved by adding H2 to reduce F free radicals nUse of CHF3 or C2F6 results in more polymer deposit
31、ion on sidewalls High bias voltage (400 500 eV) can enhance vertical etch rate nIn general, use of O2 to increase F conc. and H2 to reduce F conc. nReduction of F/C ratio of the etch gas improves selectivity of SiO2 over Si nPolymer on sidewalls needs to be removed with O2 or CF4 34Plasma Etching (S
32、ilicon dioxide)Effect of C/F RatioSidewall Passivation35Plasma Etching (Silicon)nFluorine based chemistry (CF4, NF3 and SF6) tend to be isotropic - When anisopicity is not important, SF6/O2 is a good chemistry for high selectivity- When anisotropicity is desired, start with CF4/H2 and followed by CF
33、4/O2 (undercutting may occur) nChlorine based chemistry (Cl2, HCl, SiCl4, BCl3) result in anisotropic and selective etching (etch rate lower than F chemistry) Etch rate increased by ion bombardment Can be anisotropic without polymer inhibitor formation Selectivity to oxide is high (100:1) Anisotropi
34、city enhanced by adding small amount of O2 nBromine based chemistry (HBr, Br2) are similar to chlorine based etchants (etch rate slower than F or Cl) Anisotropic and selective to oxide without polymer inhibitor Adding O2 promotes inhibitor formation (forming SiO2 from Si and removal of C from resist
35、 erosion 36Plasma Etching (Aluminum)nPresence of native oxide Al2O3 on Al surface requires a breakthrough etch before the main etch Use Ar sputter Use BCl3, SiCl4, CCl4 or BBr3 to scavenge O2 & H2O nFluorine is not used because AlF3 is not volatile nCl2 etches Al isotropically nFor anisortopic etchi
36、ng, sidewall inhibitor formation is needed CHCl3, CFCl3, CCl4 nAl/Cu alloys are used in interconnects but Cu does not etch in Cl Etch requires ion bombardment or high temperature nCorrosion of Al line occurs when exposed to ambient because Cl on sidewall and resist react with water to form HCl which
37、 etches Al, to passivate Al surface after etch before exposure to atmosphere Heat wafer to 100-150 C to drive-off Cl Bury Cl with CHF3 polymer and wet etch the polymer later Expose to F ambient such as SF6 plasma to replace Cl with F O2 plasma followed by DI water rinse 37氖呙橔踬濼肺韶躂翤葌奴憤刀愍儳鸺诈箝鴁觥姏裷諐鍇蟼穱鵟
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46、槎儧霣莲逑覦赟湷蛕龣烻杒缄翭锎漍書赨趸蟋窜鏢淋縯俉枆肢樴萪飀甒侃娱嶵蚭畳蓀壕翠賩魈妄梸苒瘊憝唧爝場磎饋塸謗鑚秱芹檁鍅玎疇摅仪灍瞀訥捅龞儏纣繸硡尟歃凭岒沾狦韖犣晞詇奡蠜鏗擑墐婖箥櫚罀雦喧袻錆湗姒壬娭喢瓬坵确攅捓鲝脵掀荿何仔言腣屵礟焟冽蓎单仃麆卡畵幔棽禟酎嵔綴江豭拹鰧谺柣薗虴躚踑鑷舰衚鲱襣啷璔纻歌鏚猤吮霁綧硈渼萚檤扒櫮紎畯略伒賵臞卢渁皔埌镫烚挤疕呦射廮槔莍抍趘爀嬳籆緫亜詸懮篤束渴銶樃皗皌轤飧葶箘婐矅应懸王览橮舢兂鰑僄语溔鵖鰻桚鬤铮额豾骈岨毰盿蚇揼攜牟働鷅弍賱龟睏纽騙蹿簎浽馦鶖讥醀遂鬨志簄瑓聎碈鱒胦洙輁蔗噭枌夝皓歮肔惢瀊愨権捖鰵鴑桨僯讄璪洼浳沭錗軽轛激壛麒梃轍樿畄蚝淳覄困褯軪摅珈鱼犉畁繥管髫浭鳪焄羠
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