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1、1 N-Channel 30-V (D-S) MOSFETFEATURESHalogen-freeTrenchFET Power MOSFETAPPLICATIONSLoad Switches for Portable DevicesNotes:a. Package limited, TC = 25 C.b. Surface Mounted on 1 x 1 FR4 board.c. t = 10 s.d. Maximum under Steady State conditions is 95 C/W.e. See Reliability Manual for profile. The Chi
2、pFET is a leadless package. The end of the lead terminal is exposed copper (not plated) as a resultof the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensureadequate bottom side solder interconnection.f. Rework Conditions
3、: manual soldering with a soldering iron is not recommended for leadless components.PRODUCT SUMMARY VDS (V)RDS(on) ()ID (A)aQg (Typ.)300.033 at VGS = 4.5 V 6.810 nC0.045 at VGS = 2.5 V 6.8N-Channel MOSFET GDSABSOLUTE MAXIMUM RATINGS TA = 25 C, unless otherwise notedParameterSymbol Limit UnitDrain-So
4、urce Voltage VDS30VGate-Source Voltage VGS 20Continuous Drain Current (TJ = 150 C)TC = 25 CID6.8aATC = 70 C6aTA = 25 C6.8a, b, cTA = 70 C6a, b, cPulsed Drain CurrentIDM30Continuous Source-Drain Diode Current TC = 25 CIS5.2TA = 25 C2.1b, cMaximum Power DissipationTC = 25 CPD6.3WTC = 70 C4TA = 25 C2.5
5、b, cTA = 70 C1.6b, cOperating Junction and Storage Temperature Range TJ, Tstg - 55 to 150CSoldering Recommendations (Peak Temperature)e, f 260THERMAL RESISTANCE RATINGS ParameterSymbolTypicalMaximumUnit Maximum Junction-to-Ambienta, c, dt 5 sRthJA4050C/WMaximum Junction-to-Foot (Drain)Steady StateRt
6、hJF1520RoHSCOMPLIANTDGSD DTC30582 3 5 5 3 Q 6 8 8 7 2 黄R 1 3 7 6 0 3 2 电5 0 7 02Notes:a. Pulse test; pulse width 300 s, duty cycle 2 %b. Guaranteed by design, not subject to production testing.Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. The
7、se are stress ratings only, and functional operationof the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximumrating conditions for extended periods may affect device reliability.SPECIFICATIONS
8、TJ = 25 C, unless otherwise notedParameterSymbol Test Conditions Min. Typ.Max.UnitStaticDrain-Source Breakdown VoltageVDS VGS = 0 V, ID = 250 A 30VVDS Temperature CoefficientVDS /TJID = 250 A 25mV/CVGS(th) Temperature CoefficientVGS(th)/TJ- 4.0Gate-Source Threshold VoltageVGS(th)VDS = VGS , ID = 250
9、 A 0.61.5VGate-Source LeakageIGSSVDS = 0 V, VGS = 20 V 100nAZero Gate Voltage Drain CurrentIDSSVDS = 30 V, VGS = 0 V1AVDS = 30 V, VGS = 0 V, TJ = 55 C 10On-State Drain CurrentaID(on)VDS 5 V, VGS = 4.5 V 30ADrain-Source On-State ResistanceaRDS(on)VGS = 4.5 V, ID = 6.3 A 0.0260.033VGS = 2.5 V, ID = 4.
10、5 A 0.0300.045Forward TransconductanceagfsVDS = 10 V, ID = 6.3 A 45SDynamicbInput CapacitanceCiss VDS = 10 V, VGS = 0 V, f = 1 MHz1200pFOutput CapacitanceCoss 220Reverse Transfer CapacitanceCrss 100Total Gate ChargeQg VDS = 10 V, VGS = 10 V, ID = 6.3 A2233nCVDS = 10 V, VGS = 4.5 V, ID = 6.3 A1015Gat
11、e-Source ChargeQgs 2.5Gate-Drain ChargeQgd1.7Gate ResistanceRgf = 1 MHz2.4Turn-on Delay Timetd(on) VDD = 10 V, RL = 1.5 ID 6.7 A, VGEN = 4.5 V, Rg = 1 1525nsRise Timetr 1015Turn-Off Delay Timetd(off) 3555Fall Timetf1220Turn-on Delay Timetd(on) VDD = 10 V, RL = 1.5 ID 6.7 A, VGEN = 10 V, Rg = 1 1015R
12、ise Timetr 1220Turn-Off Delay Timetd(off) 2540Fall Timetf1015Drain-Source Body Diode CharacteristicsContinuous Source-Drain Diode CurrentISTC = 25 C5.2APulse Diode Forward CurrentISM30Body Diode VoltageVSDIS = 6.7 A, VGS = 0 V0.81.2VBody Diode Reverse Recovery TimetrrIF = 6.7 A, dI/dt = 100 A/s, TJ
13、= 25 C2040nsBody Diode Reverse Recovery ChargeQrr1020nCReverse Recovery Fall Timeta10nsReverse Recovery Rise Timetb10 DTC30583TYPICAL CHARACTERISTICS 25 C, unless otherwise noted Output Characteristics On-Resistance vs. Drain CurrentGate Charge06121824300.00.51.01.52.02.53.0VDS - Drain-to-Source Vol
14、tage (V)- Drain Current (A)IDVGS = 5 thru 2.5 VVGS = 1.5 VVGS = 2 VVGS = 1 V0.0100.0120.0140.0160.0180.0200.0220.0240612182430RDS(on) - On-Resistance ()ID- Drain Current (A)VGS= 4.5 VVGS= 2.5 V0.02602468100510152025ID = 6 6.3 A- Gate-to-Source Voltage (V)Qg - Total Gate Charge (nC)VGSVDS = 16 VVDS =
15、 10 V Transfer Characteristics CapacitanceOn-Resistance vs. Junction Temperature02468100.00.51.01.52.0VGS- Gate-to-Source Voltage (V)- Drain Current (A)IDTC = 25 CTC = 125 CTC = - 55 CCrss03006009001200150005101520CissVDS - Drain-to-Source Voltage (V)C - Capacitance (pF)Coss0.60.81.01.21.41.6- 50- 2
16、50255075100125150TJ - Junction Temperature (C)(Normalized)- On-ResistanceRDS(on)VGS = 4.5 V, 2.5 VID = 6 6.3 A DTC30584TYPICAL CHARACTERISTICS 25 C, unless otherwise noted Source-Drain Diode Forward Voltage Threshold Voltage0.00.20.40.60.81.0 1.2TJ = 150 C10VSD - Source-to-Drain Voltage (V)- Source
17、Current (A)IS1100TJ = 25 C0.40.60.81.01.21.4- 50- 250255075100125150ID = 250 A (V)VGS(th)TJ - Temperature (C)On-Resistance vs. Gate-to-Source Voltage Single Pulse Power0.0000.0100.0200.0300.0400.050012345- On-Resistance ()RDS(on)VGS- Gate-to-Source Voltage (V)TJ= 25 CTJ= 125 CID = 6.3 A0 40 50 10 20
18、 ) W ( r e w o P Time (s)1600 0.1 0.01 0.001 1010030 Safe Operating Area, Junction-to-AmbientVDS- Drain-to-Source Voltage (V)* VGS minimum VGSat which RDS(on)is specified10010.11101000.0110ID - Drain Current (A)0.1TA= 25 CSingle PulseBVDSSLimitedLimited by RDS(on)*1 s10 sDC1 ms100 s10 ms100 ms DTC30
19、585TYPICAL CHARACTERISTICS 25 C, unless otherwise noted* The power dissipation PD is based on TJ(max) = 150 C, using junction-to-case thermal resistance, and is more useful in settling the upperdissipation limit for cases where additional heatsinking is used. It is used to determine the current rati
20、ng, when this rating falls below the packagelimit. Current Derating*03691215180255075100125150TC- Case Temperature (C)ID- Drain Current (A)Package Limited Power Derating02468255075100125150TC- Case Temperature (C)Power (W) DTC30586TYPICAL CHARACTERISTICS 25 C, unless otherwise noted Normalized Therm
21、al Transient Impedance, Junction-to-Ambient10 -310 -2110600 10 -110 -4100 2 1 0.1 0.01 0.20.10.05 0.02 Single Pulse Duty Cycle = 0.5 Square Wave Pulse Duration (s)i t c e f f1. Duty Cycle, D = 2. Per Unit Base = R thJA = 80 C/W3. T JM - TA = PDMZthJA(t)t 1 t 2 t 1 t 2 Notes: 4. Surface Mounted P DM
22、Normalized Thermal Transient Impedance, Junction-to-Foot10 -310 -210 10 -110 -42 1 0.1 0.01 0.20.1 0.050.02Duty Cycle = 0.5 Square Wave Pulse Duration (s)v i t c e f f E d e z i l a m r o N tn e i s n a r T e e c n a d e p m I l a m r e h T Single Pulse1 DTC30581Package outline - SOT89Note: Controll
23、ing dimensions are in millimeters. Approximate dimensions are provided in inchesDIMMillimetersInchesDIMMillimetersInchesMinMaxMinMaxMinMaxMinMaxA1.401.600.5500.630E2.292.600.0900.102B0.440.560.0170.022E12.132.290.0840.090B10.360.480.0140.019e1.50 BSC0.059 BSCC0.350.440.0140.017e13.00 BSC0.118 BSCD4.404.600.1730.181H3.944.250.1550.167D11.621.830.0640.072L0.891.200.0350.047D1DACB1LEHE1Bee1?
