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1、e-Beam LithographyAntony D. HanAntony D. HanChem 750Chem 750U of WaterlooU of Waterloo06-02-0706-02-07What is lithography?Original meaning:Original meaning:l l a process of printing using a non-polar ink applied to a hydrophilic a process of printing using a non-polar ink applied to a hydrophilic ma
2、ster plate patterned with a hydrophobic image.master plate patterned with a hydrophobic image.Modern usageModern usagel lThe term is more generally applied to a number of methods for The term is more generally applied to a number of methods for replicating a predetermined master pattern on a substra
3、te. replicating a predetermined master pattern on a substrate. l lReplication is effected by first coating the substrate with a radiation-Replication is effected by first coating the substrate with a radiation-sensitive polymer film (a resist) and then exposing the film to actinic sensitive polymer
4、film (a resist) and then exposing the film to actinic radiation in a pattern-wise manner. The radiation chemistry that results radiation in a pattern-wise manner. The radiation chemistry that results alters the physical or chemical properties of the exposed areas of the alters the physical or chemic
5、al properties of the exposed areas of the film such that they can be differentiated in a subsequent image film such that they can be differentiated in a subsequent image development step. Most commonly, the solubility of the film is modified development step. Most commonly, the solubility of the fil
6、m is modified with the radiation chemistry either increasing the solubility of exposed with the radiation chemistry either increasing the solubility of exposed areas (yielding a positive image of the mask after develop) or areas (yielding a positive image of the mask after develop) or decreasing the
7、 solubility to yield a negative-tone image of the mask.decreasing the solubility to yield a negative-tone image of the mask.l lWidely used in semiconductor industry and IT industry.Widely used in semiconductor industry and IT industry.Focused eBL: sub 50 nm resolutionFocused eBL: sub 50 nm resolutio
8、nSteps involved in the EBL process.With a beam current of 600 pA and an accelerating voltage of 100 kV, the beam diameter was approximately 3 nm.J. Phys. Chem. B 2002, 106, 11463-11468e-Beam LithographyElectron source: SEMEquipment: SEM equipped with a pattern generator and alignment systeme-beam co
9、ntrol:l laccelerating voltage (kV)accelerating voltage (kV)l loperation current (pA)operation current (pA)l lexposure dose (exposure dose ( C/cmC/cm2 2) )l lexposure dwell period (exposure dwell period (s)s)eBL followed by SALangmuir, Vol. 20, No. 9, 2004, 3495eBL changes the properties of coating l
10、ayersLangmuir, Vol. 20, No. 9, 2004 3767Applications of eBL(a) Backscattered electron (BSE) image of ZnO patternson SiOx substrates annealed in air at 700 C for 20 min(b) secondary electron (SE) image before annealing(c) SE image after annealing at 700 C for 20 min in air(d) SE image of annealedpatt
11、erns over a large area.Nano Lett., Vol. 5, No. 9, 2005Applications of eBLProceedings of SPIE Vol. 5184 LimitationTradeoffs for high-resolutionl lTime and high resolutionTime and high resolutionImprovement wrt this limitationl lMore sensitive resistsMore sensitive resistsl lCold developers (10 C)Cold developers (10 C)Thank you!eBL applicationsLangmuir, Vol. 20, No. 9, 2004 3767
