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1、第第2章章 射频元器件及电路模型射频元器件及电路模型 本章主要介绍本章主要介绍射射频电路元器频电路元器件及特性件及特性, 传输线特性分析传输线特性分析等等方面的基础知识方面的基础知识射频电路元器件及特性射频电路元器件及特性一、一、 射频电路元器件种类射频电路元器件种类有源器件有源器件有源器件有源器件: (Vacuum/Solid-State) : (Vacuum/Solid-State) : (Vacuum/Solid-State) : (Vacuum/Solid-State) Diode,Transistor Diode,Transistor Diode,Transistor Diode,T
2、ransistor无源器件无源器件无源器件无源器件: Resistor, Capacitor, Inductor,: Resistor, Capacitor, Inductor,: Resistor, Capacitor, Inductor,: Resistor, Capacitor, Inductor, Transimision Line Transimision Line Transimision Line Transimision Line ，Crystal ResonatorCrystal ResonatorThree-terminal Transistors: Three-termi
3、nal Transistors: Three-terminal Transistors: Three-terminal Transistors: Material: Si/CMOS/GaAs/InGaAs/InP/SiGe/SiC/GaNMaterial: Si/CMOS/GaAs/InGaAs/InP/SiGe/SiC/GaNMaterial: Si/CMOS/GaAs/InGaAs/InP/SiGe/SiC/GaNMaterial: Si/CMOS/GaAs/InGaAs/InP/SiGe/SiC/GaNStructures: BJT/HBT /MESFET/HEMT/PHEMTStruc
4、tures: BJT/HBT /MESFET/HEMT/PHEMTStructures: BJT/HBT /MESFET/HEMT/PHEMTStructures: BJT/HBT /MESFET/HEMT/PHEMTCatalog: Si BJT, Catalog: Si BJT, Catalog: Si BJT, Catalog: Si BJT, ft=50GHzft=50GHzft=50GHzft=50GHz, SiGe HBT, , SiGe HBT, , SiGe HBT, , SiGe HBT, ft=100GHzft=100GHzft=100GHzft=100GHz GaAs/I
5、nP PHEMT, GaAs/InP PHEMT, GaAs/InP PHEMT, GaAs/InP PHEMT, ft =150GHzft =150GHzft =150GHzft =150GHz, GaN HEMT:, GaN HEMT:, GaN HEMT:, GaN HEMT:ft=280GHzft=280GHzft=280GHzft=280GHz 有源固态器件有源固态器件有源固态器件有源固态器件Two-terminal Diodes: Si/GaAs/GaN Gun/IMPATTTwo-terminal Diodes: Si/GaAs/GaN Gun/IMPATT 封装型有源固态器件封
6、装型有源固态器件 无源器件无源器件封装型无源器件封装型无源器件集成电路芯片中的无源器件集成电路芯片中的无源器件 裸芯片裸芯片(Die)(Die)二、二、 无源器件的射频特性无源器件的射频特性No ideal No ideal lumped elements in RF anymore !无源器件有什么样的无源器件有什么样的无源器件有什么样的无源器件有什么样的射频射频射频射频特性特性特性特性/ / / /特点？分布特性！特点？分布特性！特点？分布特性！特点？分布特性！ Ideal Ideal R R R R is frequency is frequency is frequency is fr
7、equency independentindependentindependentindependent Ideal inductor: Ideal inductor: Ideal inductor: Ideal inductor: Ideal capacitor: Ideal capacitor: Ideal capacitor: Ideal capacitor: Conventional Lumped Circuit Analysis Conventional Lumped Circuit Analysis Conventional Lumped Circuit Analysis Conv
8、entional Lumped Circuit Analysis例例例例1 1 1 1：电感元件特性：电感元件特性：电感元件特性：电感元件特性Current and voltage Current and voltage Current and voltage Current and voltage vary spatially over vary spatially over vary spatially over vary spatially over the component sizethe component sizethe component sizethe component s
9、ize。分布特性！分布特性！分布特性！分布特性！E (or V) and H (or I) fields电感线圈电感线圈电感线圈电感线圈电感线圈的电感线圈的电感线圈的电感线圈的等效电路模型等效电路模型等效电路模型等效电路模型电感线圈的频率特性电感线圈的频率特性电感线圈的频率特性电感线圈的频率特性电阻元件的等效电路模型电阻元件的等效电路模型电阻元件的等效电路模型电阻元件的等效电路模型SMTSMTSMTSMT电阻元件电阻元件电阻元件电阻元件(0201/0402(0201/0402(0201/0402(0201/0402/0603/0603/0603/0603.)/CrN MMIC .)/CrN M
10、MIC .)/CrN MMIC .)/CrN MMIC 电阻电阻电阻电阻Abs (Z) of a thin-film resistor as a function of frequencyAbs (Z) of a thin-film resistor as a function of frequencySMTSMTSMTSMT电容元件电容元件电容元件电容元件(0201/(0201/(0201/(0201/0402/06030402/06030402/06030402/0603.)/MIM.)/MIM.)/MIM.)/MIM电容电容电容电容电容元件的等效电路模型电容元件的等效电路模型电容元件的等
11、效电路模型电容元件的等效电路模型Abs (Z) of a MIM/SMT Capacitor as a function of frequencyAbs (Z) of a MIM/SMT Capacitor as a function of frequencyElectromagnetic AnalysisMaxwells EquationSkin depth 金属导线的趋肤效应金属导线的趋肤效应Frequency behavior of Frequency behavior of normalizednormalized RF RF current current densitydensit
12、y ( (r=a=1mm, r=a=1mm, Cu)Cu) A section of wire has A section of wire has resistance and inductance!resistance and inductance! Skin depth2 GHz 功放的第一级放大器简化电路图功放的第一级放大器简化电路图2 GHz 2 GHz 功放电路版图功放电路版图功放电路版图功放电路版图(HMIC)(HMIC)20-40GHz PHEMT MMIC LNA20-40GHz PHEMT MMIC LNA20-40GHz PHEMT MMIC LNA20-40GHz PHEMT MMIC LNA
