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1、Silvaco-TCAD-Silvaco-TCAD-器件仿真器件仿真2 2上一讲知识回顾和本讲内容上一讲内容：器件仿真的整体思路器件结构，材料特性，物理模型，计算方法，特性获取和分析这一讲安排器件结构生成（2D/3D）ATLAS语法描述结构DevEdit编辑结构2024/7/192Silvaco学习器件仿真流程2024/7/193Silvaco学习ATLAS描述器件结构ATLAS描述器件结构的步骤meshregionelectrodedoping2024/7/194Silvaco学习mesh网格定义，状态有mesh,x.mesh,y.mesh,eliminate等Mesh对网格进行控制x.me
2、sh和y.mesh定义网格位置及其间隔(line)mesh space.mult=1.5mesh infile=nmos.strx.mesh loc=0.1 spac=0.052024/7/195Silvaco学习meshEliminate可以在ATLAS生成的mesh基础上消除掉一些网格线，消除方式为隔一条删一条参数columns,rows, ix.low,ix.high,iy.low.ly.high ,x.min,x.max,y.min,y.maxEliminate columns x.min=0.2 x.max=1.4 y.min=0.2 y.max=0.7Eliminate 前Elim
3、inate 后2024/7/196Silvaco学习regionRegion将mesh中不同位置以区域组织起来语法：Region number= region num=1 y.max=0.5 siliconregion num=2 y.min=0.5 y.max=1.0 x.min=0 x.max=1.0 oxideregion num=3 y.min=1.0 y.max=2.0 x.min=0 x.max=1.0 GaAs例句：2024/7/197Silvaco学习electrodeElectrode定义电极语法：electrode name= num= substrate elec nam
4、e=emitter x.min=1.75 x.max=2.0 y.min=-0.05 y.max=0.05elec name=gate x.min=0.25 lenght=0.5elec num=1 name=source y.min=0 left length=0.25elec num=2 name=drain y.min=0 right length=0.25elec name=anode topelec name=cathode bottom例句2024/7/198Silvaco学习dopingDoping定义掺杂分布doping 分布：uniform,gaussian,erfc，具体设
5、置还可分为三组1，Concentration and junction2，Dose and characteristic3，Concentration and characteristic杂质类型：n.type,p.type位置：region,x.min,x.max,y.min,y.max,peak,junction2024/7/199Silvaco学习Doping例句doping uniform conc=1e16 n.type region=1doping region=1 gaussian conc=1e18 peak=0.1 characteristic=0.05 p.type x.l
6、eft=0.0 x.right=1.0doping region=1 gauss conc=1e18 peak=0.2 junct=0.15doping x.min=0.0 x.max=1.0 y.min=0.0 y.max=1.0 n.type ascii infile=concdata均匀掺杂高斯分布从文件导入杂质分布2024/7/1910Silvaco学习ATLAS描述的二极管结构go atlasmeshx.mesh loc=0.00 spac=0.05x.mesh loc=0.10 spac=0.05y.mesh loc=0.00 spac=0.20y.mesh loc=1.00 sp
7、ac=0.01y.mesh loc=2.00 spac=0.20region number=1 x.min=0.0 x.max=0.1 y.min=0.0 y.max=1.0 material=siliconregion number=2 x.min=0.0 x.max=0.1 y.min=1.0 y.max=2.0 material=siliconelectrode name=anode topelectrode name=cathode bottomdoping uniform conc=1e18 n.type region=1doping uniform conc=1e18 p.type
8、 region=2save outfile=diode_0.strtonyplot diode_0.str2024/7/1911Silvaco学习DevEdit编辑器件结构Work areaDefining regionMesh creationSave the file2024/7/1912Silvaco学习Definingregion添加、替换或删除区域主要参数：区域ID(region=)、材料(material=)、区域坐标(points=“0,0 0,1 ”)Region reg=1 mat=silicon color=0xffb2 pattern=0x9 points=“0,0 0.
9、1,0 0.1,1 0,1 0,0”Region reg=3 name=anode material=contact elec.id=1 work.func=0 points=“0,0 0.1,0 0.1,1 0,1 0,0”例句2024/7/1913Silvaco学习Definingimpurity定义某区域的掺杂主要参数序号：Id, region.id掺杂：impurity, resistivity,杂质分布：peak.value, reference.value, combination.function, concentration.function.y|x|z, x1, x2, y1
10、, y2, rolloff.y, coc.func.y2024/7/1914Silvaco学习impurityPeak.value为杂质浓度reference.value为一定距离后的杂质浓度“Gaussian”, “Gaussian (Dist)” , “Error Function”,“Error Function (Dist)” , “Linear (Dist)” , “Logarithmic” log ,“Logarithmic (Dist)” , “Exponential, “Exponential (Dist)” , “Step Function”分布类型有：Rolloff.y|x
11、|z为浓度变化的方向2024/7/1915Silvaco学习Impurity例子impurity id=1 region.id=1 imp=Donors x1=0 x2=0.1 y1=0 y2=1 peak.value=1e+18 ref.value=1000000000000 comb.func=Multiply rolloff.y=both conc.func.y=Constant rolloff.x=both conc.func.x=Constantimpurity id=2 region.id=4 imp=Composition Fraction X x1=0 x2=0 y1=0 y2
12、=0 peak.value=0.47 comb.func=Multiply rolloff.y=both conc.func.y=Constant rolloff.x=both conc.func.x=Constant2024/7/1916Silvaco学习DefiningmeshBase.mesh，网格整体控制 参数有height,width，矩形的最大高度和宽度Bound.conditioning，减少边界的网格点Constr.mesh，对网格中三角形做限制主要参数：X1, x2, y1, y2, max|min.height|ratio|width2024/7/1917Silvaco学习
13、Mesh例句base.mesh height=0.1 width=0.125#bound.cond max.slope=28 max.ratio=300 rnd.unit=0.001 line.straightening=1 align.points when=automatic#constr.mesh mat.type=semiconductor max.angle=180 max.ratio=200 max.height=1 max.width=1 min.height=0.001 min.width=0.001#constr.mesh x1=0 x2=0.1 y1=0.0 y2=1 ma
14、x.height=0.08 min.width=0.01constr.mesh x1= 0.01 x2=0.11 y1=1 y2=2 max.height=0.1 min.width=0.01mesh2024/7/1918Silvaco学习Devedit编辑二极管结构的例子go devedit#region reg=1 mat=silicon color=0xffb2 pattern=0x9 points=“0,0 0.1,0 0.1,1 0,1 0,0”impurity id=1 region.id=1 imp=Donors x1=0 x2=0.1 y1=0 y2=1 peak.value=
15、1e+18 ref.value=1000000000000 comb.func=Multiply rolloff.y=both conc.func.y=Constant rolloff.x=both conc.func.x=Constantregion reg=2 mat=silicon color=0xffb2 pattern=0x9 points=“ 0.01,1 0.11,1 0.11,2 0.01,2 0.01,1” impurity id=1 region.id=2 imp=acceptors x1= 0.01 x2=0.11 y1=1 y2=2 peak.value=1e+18 r
16、ef.value=1000000000000 comb.func=Multiply rolloff.y=both conc.func.y=Constant rolloff.x=both conc.func.x=Constant2024/7/1919Silvaco学习Devedit编辑二极管结构的例子#electroderegion reg=3 name=anode mat=contact elec.id=1 work.func=0 points=“0,0 0.1,0 0.1, 0.01 0, 0.01 0,0”region reg=4 name=cathode mat=contact elec
17、.id=2 work.func=0 points=“ 0.01,2 0.11,2 0.11,2.01 0.01,2.01 0.01,2”# Set Meshing Parametersbase.mesh height=0.1 width=0.125#bound.cond max.slope=28 max.ratio=300 rnd.unit=0.001 line.straightening=1 align.points when=automatic#constr.mesh mat.type=semiconductor max.angle=180 max.ratio=200 max.height
18、=1 max.width=1 min.height=0.001 min.width=0.001#constr.mesh x1=0 x2=0.1 y1=0.0 y2=1 max.height=0.08 min.width=0.01constr.mesh x1= 0.01 x2=0.11 y1=1 y2=2 max.height=0.1 min.width=0.01meshstructure outf=diode_1.strtonyplot diode_1.str2024/7/1920Silvaco学习两种结构生成的方式的对比ATLAS描述的语法较简单，结构也简单DevEdit的灵活性要强，相对复
19、杂，可对已有的结构在重新定义网格或是扩展成三维结构Atlas描述的结构Devedit编辑的结构2024/7/1921Silvaco学习三维结构生成得到三维结构只需在二维结构生成的语法基础上添加Z轴的坐标如z.mesh=., z.min= ,z.max= 2024/7/1922Silvaco学习ATLAS描述三维二极管结构go atlasmesh three.dx.mesh loc=0.00 spac=0.05x.mesh loc=0.1 spac=0.05y.mesh loc=0.00 spac=0.20y.mesh loc=1.00 spac=0.01y.mesh loc=2.00 spac
20、=0.20z.mesh loc=0.00 spac=0.02z.mesh loc=1.00 spac=0.02region number=1 material=silicon x.min=0.0 x.max=1 y.min=0.0 y.max=1.0 z.min=0 z.max=1 region number=2 material=silicon x.min=0.0 x.max=1 y.min=1.0 y.max=2.0 z.min=0 z.max=1 electrode name=anode x.min=0 x.max=0.1 y.min=-0.01 y.max=0 z.min=0 z.ma
21、x=1electrode name=cathode x.min=0 x.max=0.1 y.min=2 y.max=2.01 z.min=0 z.max=1doping uniform conc=1e18 n.type region=1doping uniform conc=1e18 p.type region=2save outfile=diode_3d.str2024/7/1923Silvaco学习DevEdit3D的例子Diodeex08.inMos2ex04.in2024/7/1924Silvaco学习下一讲安排材料特性设置物理模型设置特性获取结果分析2024/7/1925Silvaco学习谢谢！2024/7/1926Silvaco学习交流时间2024/7/1927Silvaco学习结束结束
