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1、摘要晶体硅太阳电池缺陷分析与激光隔离专业：材料工程摘要本文以晶体硅太阳电池缺陷识别、分类与漏电消除为目标，针对企业产线电池成品展开了一系列检测分析工作，并对漏电电池样品进行了批量隔离实验，获得良好的效果。本文第一章首先介绍了目前光伏行业的发展与太阳电池基本理论，第二章将简要地介绍缺陷检测与激光隔离工作中使用到的各种检测技术原理及其设备，包括太阳电池 IV 测试仪、红外热像检测系统、电致发光检测仪、光致发光检测仪以及光诱导电流测试仪等检测手段，并介绍激光及其与材料的相互作用。第三章将通过采用上述各种检测设备，对多厂家晶体硅太阳电池的等外品进行较详尽的实验检测与统计分析，并比较清晰地总结出 18
2、类对太阳电池产生不同影响的缺陷类型，包括 7 类漏电缺陷与 11 类非漏电缺陷。本文还从多方面对电池缺陷进行比较详细和清晰的阐述：归纳缺陷的定义与解释，总结出各类缺陷在各种测试的特点，统计其对电池性能的总体影响，分析并推测各类缺陷的来源与机理，以及提出相应的预防手段与避免方法。本工作最后还将对各类缺陷进行统一归类，总结一套关于晶体硅太阳电池缺陷检测的评价标准与体系，并提出多项经验总结，以作为批量缺陷检测的参考标准。第四章将在电池缺陷检测分析的基础上，根据其修复价值挑选出部分漏电电池样品，并采用 532nm 绿光脉冲激光器对其进行隔离修复。本工作先采用正交实验法进行激光工艺优化，再对漏电样品进行
3、实质性隔离，并通过各种手段表征隔离效果，测量刻槽的形貌，以及检测隔离后的损伤，为批量隔离实验做准备。在激光工艺得到优化以后，分别对 20 片边缘漏电缺陷电池与随机挑选的约 130 片各类漏电电池进行小批量隔离实验。激光边缘隔离实验结果表明，对未刻边的常规多晶硅太阳电池样品进行激光边缘隔离工艺，效果非常明显，效I摘要率可恢复到 17%，达到同批次电池的正常水平，一定程度上展现出激光边缘隔离的优势。其它各类漏电电池将按漏电缺陷类型分成四组，各组激光隔离的结果也显示与初步分析结果相似，展现出不同的修复价值，大部分样品在隔离后效率平均提高 1%以上，表明批量实验获得比较好的效果。关键字：晶体硅太阳电池
4、，缺陷检测，漏电缺陷，激光隔离IIAbstractAbstractThe thesis aims at the defect identification, classification, and shunt elimination on crystalline silicon solar cells, developing a series of inspection and analysis on solar products from production line. Besides, good result is acquired after the isolation experim
5、ent is carried out on the bulk of shunt samples.In Chapter 1 the development of Photovoltaic industry and the principle of solar cell are described. Chapter 24 demonstrates the main work, Analysis of defects and Renovation of laser isolation. Several techniques on defect inspection and laser isolati
6、on, including IV tester, Thermography detector, Electroluminescence imaging, Photoluminescence imaging, Light beam induced current and Laser are introduced in Chapter 2.In Chapter 3, a mass of off-grade products from eight plants are detected, analyzed and summarized in detail by means of each instr
7、uments described above, concluding 18 defects of different types in solar cells, including 7 shunt defects and 11 non-shunt defects. The thesis gives particular and clear demonstration on definition, characteristics, influence, source, mechanism and related prevention means for each defect. Finally,
8、 classification and summaries are developed to build up an evaluation criterion for the defect detection, which would be the reference standard to defect detection in bulk.On the basis of detection and analysis of defects above, a portion of samples of shunt defects are chosen for the next laser iso
9、lation experiment. First, Orthogonal experiments are designed for the optimization of laser technology. Then, substantial experiments and characterization method would be carried out on the shunt cells, which shows some good results on elimination of shunt defect. Finally, about 150IIIAbstractrandom
10、 shunt samples are chosen for laser isolation. The result shows that the edge shunt samples successfully recover to 17.2% efficiency from initial 15.4%, reaching the average level of the same batch. The four groups of random shunt samples show that more than a half of them are improved approximately 1% in efficiency.Key words: Crystalline Silicon Solar Cells, Defect Detection, Shunt Defects, Laser IsolationIV目录目 录第一章 绪论 .11.1光伏产业的发展 .11.1.1效率与成本.21.2晶体硅太阳电池 .31.2.1半导体理论.31.2.2外电场作用下的 p-n 结 .41.2.3复合.51.2.4太阳电池原理与结构.61.2.5电学参数.71.2.6常规制备工艺.71.3漏电 .81.3.1电学模型.81.3.2漏电缺陷.91.4研究背景 .
