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1、HY1908D/U/VN-Channel Enhancement Mode MOSFET深圳市骊微电子科技有限公司电源方案开发设计半导体专业供应商Features80V/90A,Pin DescriptionG DSG DSG D SR=7.8 mW (typ.) VGS=10VDS(ON) Avalanche Rated Reliable and Rugged Lead Free and Green Devices Available (RoHS Compliant)TO-252-2LTO-251-3LTO-251-3SApplications Power Management for In
2、verter Systems.N-Channel MOSFETOrdering and Marking InformationDU V HY1908HY1908HY1908XYMXXXXXXXYMXXXXXXXYMXXXXXXPackage CodeD : TO-252-2LU : TO-251-3LV : TO-251-3LDate CodeXYMXXXXXXNote: HUAYI lead -free products contain molding compounds/die attach materials and 100% matte tin plate Termination fi
3、nish;which are fully compliant with RoHS. HUAYI lead -free products meet or exceed the lead- Free requirements of IPC/JEDEC J-STD-020 for MSL classification at lead-free peak reflow temperature.HUAYI defines “Green” to mean lead-free (RoHS compliant) and halogen free (Br or Cl does not exceed 900ppm
4、 by weight in homogeneous material and total of Br and Cl does not exceed 1500ppm by weight).HUAYI reserves the right to make changes, corrections, enhancements, modifications, and improvements to this pr-oduct and/or to this document at any time without notice.HY1908D/U/VAbsolute Maximum RatingsSym
5、bolParameterRatingUnitCommon Ratings (TC=25C Unless Otherwise Noted)VDSSDrain-Source Voltage80VVGSSGate-Source Voltage25TJMaximum Junction Temperature175CTSTGStorage Temperature Range-55 to 175CISDiode Continuous Forward CurrentTC= 25C90AMounted on Large Heat SinkIDMPulsed Drain Current *TC= 25C315*
6、AIDContinuous Drain CurrentTC= 25C90ATC= 100C59PDMaximum Power DissipationTC= 25C64WTC= 100C32RqJCThermal Resistance-Junction to Case2.35C/WRqJAThermal Resistance-Junction to Ambient110Avalanche RatingsEASAvalanche Energy, Single PulsedL=0.5mH214*mJNote：* Repetitive rating ; pulse width limiited by
7、junction temperature* Drain current is limited by junction temperature* VD=64VCElectrical Characteristics(T= 25C Unless Otherwise Noted)SymbolParameterTest ConditionsHY1908UnitMin.Typ.Max.Static CharacteristicsBVDSSDrain-Source Breakdown VoltageVGS=0V, IDS=250mA80-VIDSSZero Gate Voltage Drain Curren
8、tVDS=80V, VGS= 0V-1mATJ=85C-10VGS(th)Gate Threshold VoltageVDS=VGS, IDS=250mA234VIGSSGate Leakage CurrentVGS=25V, VDS= 0V-100nARDS(ON)*Drain-Source On-state ResistanceVGS=10V, IDS= 45A-7.89.0mWDiode CharacteristicsVSD*Diode Forward VoltageISD=45A, VGS= 0V-0.81.2VtrrReverse Recovery TimeISD=45A, dlSD
9、/dt=100A/ms-30-nsQrrReverse Recovery Charge-25-nC深圳市骊微电子科技有限公司电源方案开发设计半导体专业供应商深圳市骊微电子科技有限公司电源方案开发设计半导体专业供应商CElectrical Characteristics (Cont.) (T= 25C Unless Otherwise Noted)SymbolParameterTest ConditionsHY1908UnitMin.Typ.Max.Dynamic CharacteristicsRGGate ResistanceVGS=0V,VDS= 0V,F= 1MHz-1.2-WCissIn
10、put CapacitanceVGS=0V, VDS=25V,Frequency=1.0MHz-3864-pFCossOutput Capacitance-365-CrssReverse Transfer Capacitance-239-td(ON)Turn-on Delay TimeVDD=40V, RG=6 W, IDS=45A, VGS=10V,-26-nsTrTurn-on Rise Time-42-td(OFF)Turn-off Delay Time-64-TfTurn-off Fall Time-20-Gate Charge CharacteristicsQgTotal Gate
11、ChargeVDS=64V, VGS=10V, IDS=45A-84-nCQgsGate-Source Charge-16-QgdGate-Drain Charge-26-Note * : Pulse test ; pulse width 300ms, duty cycle2%.Avalanche Test CircuitSwitching Time Test CircuitGate Charge Test CircuitHY1908D/U/VDevice Per UnitPackage TypeUnitQuantityTO-252-2LTube75TO-252-2LReel2500TO-25
12、1-3LTube75TO-251-3STube75Package InformationTO-252-2LCOMMON DIMENSIONSSYMBOLmmMINNOMMAXA2.202.302.40A10.00-0.20A20.971.071.17b0.680.780.90b35.205.335.50c0.430.530.63D5.986.106.22D15.30REFE6.406.606.80E14.63-e2.286BSCH9.4010.1010.50L1.381.501.75L12.90REFL20.51BSCL30.88-1.28L4-1.00L51.651.801.950-8TO-251-3LCOMMON DIMENSIONSSYMBOLmmMINNOMMAXA2.202.302.40A20.971.071.17b0.680.780.90b20.000.040.10b20.000.040.10b35.205.335.50c0.430.530.
