Area页次英文名称中文名称PEI1Active Area主动区（工作区）PH2ACETONE丙酮PH3ADI显影后检查ET4AEI蚀刻后检查PT5AIR SHOWER空气洗尘室PH6ALIGNMENT对准DF7ALLOY/SINTER熔合TF8AL/SI铝/硅 靶TF9AL/SI/CU铝/硅/铜TF10ALUMINUN铝TF11ANGLE LAPPING角度研磨TF12ANGSTRON埃TF13APCVD（ATMOSPRESSURE）常压化学气相沉积DF14AS75砷ET15ASHING，STRIPPING电浆光阻去除PEI16ASSEMBLY晶粒封装PEI17BACK GRINDING晶背研磨PH18BAKE, SOFT BAKE, HARD BAKE烘烤，软烤，硬烤DF19BF2二氟化硼DF20BOAT晶舟ET21B.O.E二氧化硅蚀刻液PEI22BONDING PAD焊垫DF23BORON硼TF24BPSG含硼及磷的硅化物PEI25BREAKDOWN VOLTAGE崩溃电压PEI26BURN IN预烧试验PEI27CAD计算机辅助设计PH28CD MEASUREMENT微距量测ET29CH3COOH醋酸TF30CHAMBER真空室,反应室PEI31CHANNEL信道PEI32CHIP ,DIE晶粒PEI33CLT（CARRIER LIFE TIME）载子生命周期PEI34CMOS互补式金氧半导体PH35COATING光阻覆盖ET36CROSS SECTION横截面PEI37C-V PLOT电容,电压图QA38CWQC全公司品质管制PT39CYCLE TIME生产周期时间PT40CYCLE TIME生产周期时间PEI41DEFECT DENSITY缺点密度PH42DEHYDRATION BAKE去水烘烤DF43DENSIFY密化ET44DESCUM电浆预处理PEI45DESIGN RULE设计规范PEI46EDSIGN RULE设计准则DF48DIFFUSION 扩散DF49DI WATER去离子水DF50DOPING参入杂质PEI51DRAM , SRAM动态,静态随机存取内存DF52DRIVE IN驱入PH53E-BEAM LITHOGRAPHY电子束微影技术PEI54EFR（EARLY FAILURE RATE）早期故障率PEI55ELECTROMIGRATION电子迁移PEI56ELECTRON/HOLE电子/ 电洞DF57ELLIPSOMETER椭圆测厚仪PEI58EM（ELECTRO MIGRATION TEST）电子迁移可靠度测试ET59END POINT DETECTOR终点侦测器DF60ENERGY能量DF61EPI WAFER磊晶芯片PEI62EPROM (ERASABLE-PROGRAMMABLE ROM）电子可程序只读存储器PEI63ESDELECTROSTATIC DAMAGEELECTROSTATIC DISCHARGE静电破坏静电放电ET64ETCH蚀刻PH65EXPOSURE曝光PT66FABRICATION（FAB）制造PEI67FBFC（FULL BIT FUNCTION CHIP）全功能芯片PEI68FIELD/MOAT场区DF69FILTRATION过滤PEI70FIT（FAILURE IN TIME）PEI71FOUNDRY客户委托代工PEI72FOUR POINT PROBE四点侦测ET73MEGA SONIC CLEAN超音波清洗TF74FTIR傅氏转换红外线光谱分析仪PEI75FTY（FINAL TEST YIELD）最终测试良率PEI76FUKE DEFECTDF77GATE OXIDE闸极氧化层PEI78GATE VALVE闸阀PEI79GEC（GOOD ELECTRICAL CHIP）优良电器特性芯片PEI80GETTERING吸附PH81G-LINEG-光线PH82GLOBAL ALIGNMENT整片性对准与计算PEI83GOI（GATE OXIDE INTEGRITY）闸极氧化层完整性TF84GRAIN SIZE颗粒大小QA85GRR STUDY (GAUGE REPEATABILITY AND REPRODUUCIBILITY）测量仪器重复性与再现性之研究ET86H2SO4硫酸DF87H3PO4磷酸ET88HCL氯化氢（盐酸）ET89HEPA高效率过滤器TF90HILLOCK凸起物PH91HMDS双三甲基硅铵DF92HNO3硝酸PEI93HOT ELECTRON EFFECT热电子效应PH94I-LINE STEPPERI-LINE步进对准曝光机DF95IMPURITY杂质PEI96INTEGRATED CIRCUIT（IC）集成电路DF97ION IMPLANTER离子植入机DF98ION IMPLANTATION离子植入ET99ISOTROPIC ETCHING等向性蚀刻PEI100ITY（INTEGRATED TEST YIELD）整合测试良率PEI101LATCH UP栓锁效应PEI102LAYOUT布局ET103LOAD LOCK传送室PT104LOT NUMBER批号DF105LPCVD（LOW PRESSURE）低压化学气相沉积DF106LP SINTER低压烧结PEI107LPY（LASER PROBE YIELD）雷射修补前测试良率PH108MASK光罩PH109MICRO,MICROMETER,MICRON微，微米PH110MISALIGN对准不良PEI111MOS金氧半导体PEI112MPY（MULTI PROBE YIELD）多功能侦测良率TF113MTBF（MEAN TIME BETWEEN FAILURE）异常间隔时间TF114N2,NITROGEN氮气PEI115N,P TYPE SEMICONDUCTORN,P型半导体DF116NSG（NONDOPED SILICATE GLASS）无参入杂质硅酸盐玻璃PH117NUMERICAL APERTURE（N.A.）数值孔径ET118OEB（OXIDE ETCH BACK ）氧化层平坦化蚀刻PEI119OHMIC CONTACT欧姆接触PEI120ONO（OXIDE NITRIDE OXIDE）氧化层-氮化层-氧化层PEI121OPL（OP LIFE）（OPERATION LIFE TEST）使用期限（寿命）ET122OXYGEN氧气DF123P31磷PEI124PARTICLE CONTAMINATION尘粒污染PEI125PARTICLE COUNTER尘粒计数器TF126PASSIVATION OXIDE（P/O）护层PEI127P/D（PARTICLE DEFECT）尘粒缺陷TF128PECVD电浆CVDPH130PELLICLE光罩保护膜TF131PH3氢化磷PH132PHOTORESIST光阻PEI133PILOT WAFER试作芯片TF134PINHOLE针孔DF135PIRANHA CLEAN过氧硫酸清洗PH136PI(Polyimide)聚乙醯胺ET137PLASMA ETCHING电浆蚀刻PH-EQ138PM（PREVENTIVE MAINTENANCE）定期保养ET139POCL3三氯氧化磷DF140POLY SILICON复晶硅TF142PREHEAT预热TF143PRESSURE压力ET144REACTIVE ION ETCHING（R.I.E.）活性离子蚀刻ET145RECIPE程序TF146REFLOW回流PH147REGISTRATION ERROR注记差QA148RELIABILITY可靠性PEI149REPEAT DEFECT重复性缺点TF150RESISTIVITY阻值PH151RESOLUTION解析力PH152RETICLE光罩PT153REWORK/SCRAP/WAIVE修改 /报废/签过PH154RUN IN/OUT挤进/挤出TF155SCRUBBER刷洗机PEI156SAD（SOFTWARE DEFECT ANALYSIS）缺陷分析软件PH157SEM（SCANNING ELECTRON MICROSCOPE）电子显微镜ET158SELECTIVITY选择性TF159SILICIDE金属硅化物TF160SILICIDE金属硅化物DF161SILICON硅DF162SILICON NITRIDE氮化硅PT163MES (Manufacturing Execution System)制造管理系统PT164SOFT WARE, HARD WARE软件 ,硬件TF165S.O.G.（SPIN ON GLASS）旋制氧化硅PEI166S.O.J.(SMALL OUTLINE J-LEAD PACKAGE）缩小型J形脚包装IC。