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1、本科毕业论文GaN 基微波功率器件 AuSn 共晶界面失效仿真建模专业机械工程及自动化姓名指导教师评 阅 人20XX 年 X 月中国南京河海大学本科毕业论文BACHELORS DEGREE THESIS OF HOHAI UNIVERSITYFailure Simulation Modeling of AuSn Eutectic Interface of GaN based Microwave Power DeviceCollege： Major：Mechanical Engineering and AutomationName： Directed by： NANJING CHINA河海大学本
2、科毕业论文 河海大学本科毕业论文摘要以 GaN、SiC 为代表的第三代半导体材料具有禁带宽度大、热导率高和介电常数小等特点，因此在光电子器件、高温大功率器件以及微波功率器件的应用方面具有非常广阔的发展前景。焊料作为制造微波功率器件必不可少的材料被用来连接半导体芯片以及元器件，其中焊接接头起到了机械支撑、电连接与热传导的作用。焊料的可焊性、强度、熔点以及热膨胀系数、蠕变性能、热疲劳、杨氏模量均可影响到焊料连接的质量。因此，选择合适的焊料就成为决定微波功率器件整体性能的重要内容之一。AuSn 共晶合金作为一种无铅焊料，本身强度比较高，焊接温度适中，熔点低，抗热疲劳和蠕变性能优良，电导性好，这些优点
3、使其成为微波功率器件封装的最佳焊料之一。本论文首先简要介绍了 GaN 材料的研究历史、基本特性、应用领域以及发展前景。接着，以一款 GaN 基微波功率器件封装为研究对象，建立了封装器件及 AuSn 共晶界面结构模型，考虑芯片、焊料和基板材料等影响因素，采用 ANSYS仿真技术模拟预测了 2 种以上冷热循环负载条件下固晶界面的机械性能和散热性能（包含芯片结温、基板温度等特性）。本研究综合运用多学科知识（如力学，物理学，材料学等），研究材料与界面的优化设计，探索第三代半导体新型器件封装结构中 AuSn 共晶界面在冷热循环负载条件下的失效机理。关键词：GaN 基第三代半导体，AuSn 焊料，共晶界面
4、，ANSYS 仿真技术，失效机理I河海大学本科毕业论文AbstractGaN and SiC, representing the third generation semiconductor material, have good physical and chemical properties with wider band gap, higher thermal conductivity and higher dielectric constant. They has a very broad development prospect in optoelectronic devices,
5、high-temperature and high-power devices and microwave power device applications. As an indispensable material for the fabrication of microwave power devices, the solder joint is used to connect the semiconductor chip and components of the device, and the solder joint plays the role of mechanical sup
6、port, electrical connection and heat conduction.This study briefly introduces the research history, basic characteristics, application fields and development prospects of GaN materials. The AuSn eutectic interface of the third generation of microwave semiconductor power device package was selected a
7、s the research object of this study and the AuSn eutectic interface structure model was established with considering of the effects of the chip, solder and substrate materials. The mechanical performance and heat dissipation performance (including the chip junction temperature, substrate temperature
8、, and so on) of AuSn eutectic interface can be predicted with the ANSYS simulation tool. In this study, we considered more than two kinds of thermal cycle load conditions in the simulation modeling. This study integrates the multi-disciplinary knowledge (such as mechanics, physics, materials science
9、, etc.) and use ANSYS simulation to optimize the design of materials and interfaces. Based on the results, the failure mechanisms of AuSn eutectic interface under the designed thermal cycle load conditions were analyzed.Key words: The GaN-based third generation semiconductor, AuSn solder, Eutectic interface, ANSYS simulation, Failure mechanismsII河海大学本科毕业论文目 录摘 要 .IAbstract .II第一章 绪论 .11.1研究背景.11.2研究意义.11.3研究内容与研究方法.2第二章 相关研究基础 .32.1 GaN 合金材料简介.32.1.1研究历史.32.1.2基本特性.32.1.3应用领域及发展前景.32.2金锡合金焊料.42.2.1性能.42.2.2应用.52.2.3制备.52.2.4焊接技术的改进.
