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1、FAIRCHII-口SEMIOONOUOTOR3S9011W Output Amplifier of Potable Radios in Class B Push-pull Operation. High total power dissipation. (PT=625mW) High Collector Current. (lc=500mA) Complementary to SS9012 Excellent hp linearity.1TO-921. Emitter 2. Base 3. CollectorNPN Epitaxial Silicon TransistorAbsolute M
2、aximum Ratings Ta=25C unless otherwise notedSS9013B类便携式收音机中1W输出放大器的推挽式操作运算 最高消耗功率(Pt=625mW)最高集电极电流.(Ic=500mA)1发射与SS9012互补2基极3集电极NPN硅晶体管Ta=25 C时绝对最大额定参数SymbolParameterRati ngsUnitsVCBOCollector-Base Voltage40VVCEOCollector-Emitter Voltage20VVEBOEmitter-Base Voltage5VcCollector Current500mAPcCollector
3、 Power Dissipation625mWTjJunction Temperature150CtstgStorage Temperature-55-150C符号参变量评定等级单位Vcbo基极电压40VVceo集电极电压20VVebo发射极电压5VIc集电极电流500mAPc集电极消耗功率625mWTj交叉点温度150 CTstg储存温度-55150 CSymbolParameterTest ConditionMin.Typ.Max.UnitsBVcbOCollector-Base Breakdown Voltagelc=100A, lE =040VbvceoCollector-Emitte
4、r Breakdown VoltageIq =1mA, lB =020VbveboEmitter-Base Breakdown VoltageIe=100jiA, lc=05V!cboCollector Cut-off CurrentVCB =25V, lE =0100nAIeboEmitter Cut-off CurrentVeb =3V, b =0100nAhFE1hFE2DC Current GainVce=1V, lc =50mAVce=1V, lc =500mA6440120120202Vce (sat)Collector-Emitter Saturation Voltagelc =
5、500mA, Ib =50mA0.160.6VVbe (sat)Base-Emitter Saturation Voltagelc =500mA, Ib =50mA0.911.2Vbe Qn)Base-Emitter On VoltageVce=1V, lc=10mA0.60.670.7VTa=25 C时电气特性参数hFE ClassificationClassificatio nDEFGHhFE164-9178 11296 135112 - 166144-202h FE分类分类DEFGHhFEl64917811296135112166144202Typical Characteristics
6、符号参变量试验状态最小值典型 值最大值单位BVCBO集电极击穿电压Ic =100pA, Ie =040Vbvceo发射极击穿电压Ic =1mA, Ib =020Vbvebo基极击穿电压Ie =100pA, Ic =05VICBO集电极截止电流Vcb =25V, Ie =0100nAIEBO发射极截止电流Veb =3V, =0100nAhFE1hFE2直流电流增益VCE=1V, IC=50mA VCE =1V, IC =500mA6440120120202VCE(sat)集电极饱和电压Ic =500mA, IB =50mA0.160.6VVBE(sat)基极饱和电压Ic =500mA, IB =
7、50mA0.911.2VVBE (on)基极工作电压VCE=1V, IC =10mA0.60.670.7V标准的特性曲线in 山QrQrnolxOJ_ca-noo 習二一VCE M, COLLECTOR-EMITTER VOLTAGEODFigure 1. Static Characteristic静态特性曲线（集电极电流、 饱和电压）z-0 in 山orozno OQ .出 v10100 1000lc mA, COLLECTOR CURRENTFigure 2. DC current Gain10000电流增益频带宽（集电极电流电流增益频带宽度 ）Package Dimensions封装尺寸
8、大小TO-92s =- 4.1.2TTYP1.27 uKi|1.2TTYP；1.27 ijKi0.3B*0 10 -C 053.00 -2 2CL rI9 f丿舟ed4 iTOftnCRflADlZGthe following 彳畠详细Thd 下_ 个的registered trademarks Fairchild Semic on ductor owns or is authorized to use and is notintq .f all such trademarks1 兩1 賊 v._ I以下是仙童半导体注册和未注册的商标ACExFACTImpliedDiscon nectPACM
9、ANSPMActiveArrayFACT Quiet seriesISOPLANARPOPStealthBottomlessFASTLittleFETPower247SuperSOT-3CoolFETFASTrMicroFETPowerTrenchSuperSOT-6CROSSVOLrFRFETMicraPakQFETSuperSOT-8DOMEGlobalOptoisolatorMICROWIREQSSyncFETE coSPARKGTOMSXQT OptoelectronicsTinyLogicE2CMOSHiSeCMSXPraQuiet SeriesTruTranslationEnSig
10、naFCOCXRapidConfigureUHCAcross the board.Around the world.OCXPraRapidConnectUltraFETThe Power FranchiseOPTOLOGICSILENT SWITCHERvexProgrammable Active DroopOPTOPLANARSMART STARTDISCLAIMERFAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROV
11、E RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.免责声明飞兆半导体储备的权利，恕不另行通知的变化以下所有产品在提高可靠性，功能和设计飞兆半导体不承担 任何责任的应用
12、或使用任何产品或电路此处所描述的； 它也不传达任何其专利权的许可下，也没有他人的权利LIFE SUPPORT POLICYFAIRCHILDS PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORTDEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.As used herein:1. Life support devices or systems are devic
13、es or systems which, (a) are intended for surgical implant into the body,or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user.2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life supportdevice or system, or to affect its safety or effectiveness
