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1、精品文档，仅供学习与交流，如有侵权请联系网站删除学号 姓名 密封线东 南 大 学 考 试 卷（ 卷）课程名称电子器件考试学期得分适用专业电子科学与技术考试形式开卷考试时间长度120分钟I （total 20 points）Explain the following concept as simply as possible.1. effects of MOSFET2. 3. transistor4. voltage5. of BJTII （Total 40 points）Answer the following questions.1. How to control ?2. Explain t
2、he effects.3. What is the effect in BJT? 4. What are the differences between and ?5. Explain the of .III (Total 25 points) A standard MOSFET is fabricated with fms= , Qi= ,d= , gate area A= , and NA= .Assume T=300K. Calculate:(1) The voltage;(2) The voltage ; (3) Judge of this MOSFET;(4) At , the MO
3、SFET exhibits a drain current of ID= . Using in the textbook, determine the drain current if .III( Total 10 points)For an MOSFET with NA= and Qi= , its threshold voltage is about for gate oxide of . What is the required to increase VT to ? Assume that . Some constants: k=1.3810-23J/K=8.6210-5eV/K; q=1.610-19C; e0=8.8510-14F/cm=8.8510-12F/m; The relative dielectric constant of SiO2 is 3.9; The intrinsic concentration for Si at room temperature is ni=1.51010cm-3.)【精品文档】第 页
