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1、今天找三星闪存资料，发现了他的命名规则，发上来与大家分享下三星的 pure nand flash名规则如下：（就是不带其他模块只是 nand flash存储芯片）的命K9XXXXXXXX X X X XX X XL.fli丁 ：- MLJ i T . .B 匚 R-j-Fja ia.g-.8 .jjj .匚一t8-8 m!wLidjB匸一 _r.8 1 - 一一 -飞 卩“冒 1 卜 1T12 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 181. Memory (K)2. NAND Flash : 93. Small Classificatio n(SLC :
2、Sin gle Level Cell, MLC : Multi Level Cell, SM : SmartMedia, S/B : Small Block)1 : SLC 1 Chip XD Card2 : SLC 2 Chip XD Card4 : SLC 4 Chip XD CardA : SLC + Muxed 1/ F ChipB : Muxed I/ F ChipD : SLC Dual SME : SLC DUAL (S/ B)F : SLC NormalG : MLC NormalH : MLC QDPJ : No n-Muxed On eNa ndK : SLC Die St
3、ackL : MLC DDPM : MLC DSP N : SLC DSPQ : 4CHIP SMR : SLC 4DIE STACK (S/ B)S : SLC Si ngle SMT : SLC SINGLE (S/ B)U : 2 STACK MSPV : 4 STACK MSPW : SLC 4 Die Stack45. Density (注：实际单位应该是bit，而不是Byte)12 : 512M16 : 16M28 : 128M32 : 32M40 : 4M56 : 256M64 : 64M80 : 8M1G : 1G2G : 2G4G: 4G8G: 8GAG: 16GBG: 32
4、GCG: 64GDG: 128G00: NONE67. organization00: NONE08: x816: x168. VccA :1.65V3.6VB :2.7V (2.5V2.9V)C :5.0V (4.5V5.5V)D :2.65V (2.4V 2.9V)E :2.3V3.6VR :1.8V (1.65V1.95V)Q :1.8V (1.7V 1.95V)T :2.4V3.0VU :2.7V3.6VV :3.3V (3.0V3.6V)W :2.7V5.5V, 3.0V5.5V0 :NONE9. Mode0 : Normal1 : Dual nCE & Dual R/ nB4 :
5、Quad nCE & Single R/ nB5 : Quad nCE & Quad R/ nB9 : 1st block OTPA : Mask Option 1L : Low grade10. GenerationM : 1st GenerationA : 2nd GenerationB : 3rd GenerationC : 4th GenerationD : 5th Generation12. Package A : COB B : TBGA C : CHIP BIZD : 63-TBGAE : TSOP1 (Lead-Free, 1217)F : WSOP (Lead-Free)G
6、: FBGAH : TBGA (Lead-Free)I : ULGA (Lead-Free)J : FBGA (Lead-Free)K : TSOP1 (1217)L : LGAM : TLGAN : TLGA2P : TSOP1 (Lead-Free)Q : TSOP2 (Lead-Free)R : TSOP2-RS : SMART MEDIAT : TSOP2U : COB (MMC)V : WSOPW : WAFERY : TSOP113. TempC : CommercialI : IndustrialS : SmartMediaB : SmartMedia BLUE0 : NONE
7、(Containing Wafer, CHIP, BIZ, Exception handling code)3 : Wafer Level 314. Bad BlockA : Apple Bad BlockB : Include Bad BlockD : Daisychain SampleK : Sandisk BinL : 15 Bad BlockN : ini. 0 blk, add. 10 blkS : All Good Block0 : NONE (Containing Wafer, CHIP, BIZ, Exception handling code)15. NAND-Reserve
8、d0 : Reserved16. Packing Type- Common to all products, except of Mask ROM- Divided into TAPE & REEL(In Mask ROM, divided into TRAY, AMMO Packing Separately)【举例说明】K9GAG08U0M-PCB0123456789101112131415161718K9GAG08U0详细信息如下：1. Memory (K)2. NAND Flash : 93. Small Classificatio n(SLC : Sin gle Level Cell,
9、 MLC : Multi Level Cell,SM : SmartMedia, S/B : Small Block)G : MLC Normal45. DensityAG : 16G （Note: 这里单位是bit而不是byte，因此实际大小是16Gb=2GB）6. Tech no logy 0 : Normal (x8)7. Orga ni zati on0 : NONE 8 : x88. VccU : 2.7V3.6V9. Mode0 : Normal10. Gen erati on M : 1st Gen eration11.IIII12. PackageP : TSOP1 (Lead
10、-Free)13. TempC : Commercial14. Customer Bad BlockB : In clude Bad Block15. Pre-Program Version0 : None整体描述就是：K9GAG08U0M，三星的 MLC Na nd Flash，工作电压为 2.7V3.6V , x8 (即 I/O 是8位)，大小是2GB( 16Gb , TSOP封装。Hynix 海力士H 2 7 X X X X X X X X X - X X(1) HYNIX(2) PRODUCT FAMILY(4) POWER SUPPLY(VCC)(8) NAND CLASSIFICA
11、TION(7) ORGANIZATION(14) BAD BLOCK(11) PACKAGE TYPE2 : FlashS: SLC + Single Die + Small BlockA: SLC + Double Die + Small BlockB: SLC + Quadruple Die + Small BlockF: SLC + Single Die + Large BlockG: SLC + Double Die + Large BlockH: SLC + Quadruple Die + Large BlockJ: SLC + ODP + Large BlockK: SLC + D
12、SP + Large BlockT: MLC + Single Die + Large BlockU: MLC + Double Die + Large BlockV: MLC + Quadruple Die + Large BlockW: MLC + DSP + Large BlockY: MLC + ODP + Large BlockC: Included Bad BlockE: 15 Bad Block IncludedM: All Good BlockI: TSOP1B: WSOPS: USOPP: LSOP1T: FBGAV: LGAS: WLGAN: VLGAF: ULGAX: W
13、aferM: PGD1 (chip)Y: KGDU: PGD2W: 1stC: 2ndK: 3rdD: 4thMABC(5), (6) DENSITY1: 1 nCE& 1 R/nB;Seque ntial RowReadEn able2: 1 nCE& 1 R/nB;Seque ntial RowReadDisable4: 2 nCE& 2 R/nB;Seque ntial RowReadEn able5: 2 nCE& 2 R/nB;Seque ntial RowReadDisableD: Dual In terface; Seque ntial Row Read DisableF: 4
14、nCE & 4 R/nB ; Seque ntial Row Read Disablemicron镁光nand命名规则www.micr on. com/support/desig nsupport/docume nts/p ngSta ndard NAND Flash Part Numberi ng System Micro ns part nu mberi ng system is available at Sta ndard NAND Flash*MT 29F 2G 08 A A A WP - xx xx xx xx ES : AMicro n Tech no logy Desig n Revisio n (shri nk)A = 1st desig n revisio n1. Sin gle-Supply Flash29F = Single-Supply NAND Flash Production Status 29H = High Speed NAND Bla nk = Production ES = Engin eeri ng samples
