《Si和SiO2Si衬底上石墨烯的生长和结构表征》由会员分享，可在线阅读，更多相关《Si和SiO2Si衬底上石墨烯的生长和结构表征（110页珍藏版）》请在金锄头文库上搜索。
1、Si和SiO2Si衬底上石墨烯的生长和结构表征 中国科学技术大学 硕士学位论文 Si和SiO2/Si衬底上石墨烯的生长和结构表征 姓名：李利民 申请学位级别：硕士 专业：同步辐射及应用 指导教师：潘国强；徐彭寿 2011-05 摘要 摘要 石墨烯是一种由碳原子紧密堆积成的单层二维蜂窝状晶格结构的新材料，具 有许多奇特的力学、电学和热学性能，使其在集成电路、功能性复合材料、储能 材料、催化剂载体等方面具有很广泛的应用前景。目前，已发展了多种制备石墨 烯的方法，如：微机械剥离法、化学剥离法、金属衬底外延法和SiC 高温退火法 等。然而，这些方法制备的石墨烯都需要特殊的衬底或者需要把制备的石墨烯转
2、移到绝缘衬底材料上才能进行微电子器件的设计与利用，并且不能与目前的 Si 基半导体工艺相结合。 在本文中，我们探索了在Si 基衬底和SiO /Si 基衬底上沉积固态碳原子的方 2 法直接制备石墨烯薄膜，并通过同步辐射及一些常规的表征方法研究了薄膜的结 构特征，为 Si 基衬底上制备石墨烯做出了有益的探索。主要的研究工作及结果 如下： 1）在Si（111）衬底表面上在不同的衬底温度（400、600、700、800）下 直接沉积固态碳原子制备石墨烯。利用 RHEED、FTIR、Raman 和 NEXAFS 技 术对制备的薄膜进行了结构表征，结果表明：在 400、600 和 700温度下制备 的薄膜
3、仅为无定形碳，而只有在800温度下制备的薄膜才具有石墨烯的特征， 同时发现在800的样品中有SiC 层生成。因此我们认为，衬底温度对Si 衬底上 石墨烯的形成起重要作用，同时，SiC 缓冲层的形成对石墨烯的生长有促进作用。 2）在SiO2/Si 衬底上，利用直接沉积固态碳原子的方法在不同的衬底温度下 （500、600、700、900、1100、1200）制备石墨烯薄膜。利用Raman、NEXAFS 和XPS 技术对薄膜结构进行了结构表征，结果表明：700是石墨烯形成的初始 温度，而 1100是石墨烯形成的最优化温度。随着衬底温度的升高，形成的石 墨烯质量逐渐提高，但是过高的衬底温度会导致氧化层
4、的分解，使形成的石墨烯 质量变差。 关键词：固源分子束外延 石墨烯 硅衬底 SiO2/Si 衬底 I ABSTRACT ABSTRACT Graphene is a new material, comprising of a monolayer of carbon atoms packed into a two-dimensional honeycomb lattice, exihibits a series of unusual mechanical, electrical and thermaldynamic properties and will be widely applied in
5、 integrated circuit, functional composite materials, energy storage materials, catalyst support etc. At present, many production methods of graphene have been developed, such as micromechanical cleavage, chemical stripping, metal substrate epitaxy, SiC thermal annealing, etc. However, the graphene p
6、repared by these methods require special substrates or needs to be transferred to other insulative substrates due to their micro-electrical devices design and application, and it can not be used with the current Si-based semiconductor technology. In this theis, we explore to grow graphene films on t
7、he substrates of SiO2/Si via directely depositing solid-state carbon atoms, moreover, synchrotron radiation SR experimental technology and some normal analysis methods have been employed for the structural charateristics of grown graphene films. The main results are listed as following: 1 Graphene f
8、ilms were grown on Si 111 at different substrate temperature 400,600,700,800 by directly depositing solid-state carbon atoms. The structural properties are characterized by RHEED, FTIR, Raman and NEXAFS. The results indicated that: the films grown at 400, 600, 700 temperature just contained amorphou
9、s carbon, only at the 800 temperature graphene films started to form. Therefore, we thought that substrate temperature played a key role during the formation process of graphene grown on the Si substrates, meanwhile, the formation of a SiC buffer layer was helpful for the growth of graphene. 2 Graph
10、ene films were grown on SiO2/Si substrates at different substrate temperature 500, 600, 700, 900, 1100, 1200 by directly depositing carbon atoms. The structural properties are characterized by Raman, NEXAFS and XPS. The results indicated that: 700 was the initial temperature for the formation of gra
11、phene,and 1100 was the optimal temperature for the growth of graphene on SiO /Si substrate. 2 The quality of graphene films improved with increasing the substrate temperature. However, when the substrate temperature was too high, the partial decomposition of the oxide layer would lead to the poor quality of the grown graphene films. III ABSTRACT Key words: Solid source molecular beam epitaxy SSMBE , Graphene, Si substrate, SiO2/Si substrate IV 中国科学技术大学学位论文原创性声明 本人声明所呈交的学位论文,是本人在导师指导下进行研究工作所取得的成 果。除已特别加以标注和致谢的地方外，论文中不包含任何他人已经发表或撰写 过的研究成果
