Si2302DS Vishay Siliconix N Channel 1 25 W 2 5 V MOSFET 2 1 1597445168 0755 27529455 M P 13286655786 S I 2 3 0 2 是二三极管的一种 属于增强模式场效应晶体管 S I 2 3 0 2 主要参数 晶体管类型 N 沟道M O S F E T 最大功耗P D 1 2 5 W 栅极门限电压V G S 2 5 V 典型值 漏源电压V D S 2 0 V 极限值 2 0 v 漏极电流I D 2 8 A 通态电阻R D S o n 0 1 4 5 o h m 典型值 栅极漏电流I G S S 1 0 0 n A 结温 5 5 t o 1 5 0 替代型号 封装 S O T 2 3 T O 2 3 6 W T 2 3 0 2 W T C 2 3 0 2 S M G 2 3 0 2 C E S 2 3 0 2 K I 2 3 0 2 B D S Si2302DS Vishay Siliconix N Channel 1 25 W 2 5 V MOSFET VDS V rDS on ID A 20 0 085 VGS 4 5 V2 8 20 0 115 VGS 2 5 V2 4 G S D Top View 2 3 TO 236 SOT 23 1 Si2302DS A2 Marking Code ParameterSymbolLimitUnit Drain Source VoltageVDS20 V Gate Source VoltageVGS 8 V Continuous Drain Current TJ 150 C b TA 25 C ID 2 8 A Continuous Drain Current TJ 150 C b TA 70 C ID 2 2 A Pulsed Drain CurrentaIDM10 A Continuous Source Current Diode Conduction bIS1 6 Power Dissipationb TA 25 C PD 1 25 WPower Dissipationb TA 70 C PD 0 80 W Operating Junction and Storage Temperature RangeTJ Tstg 55 to 150 C ParameterSymbolLimitUnit Maximum Junction to Ambientb RthJA 100 C W Maximum Junction to Ambientc RthJA 166 C W Notes a Pulse width limited by maximum junction temperature b Surface Mounted on FR4 Board t 5 sec c Surface Mounted on FR4 Board For SPICE model information via the Worldwide Web 2 2 1597445168 0755 27529455 M P 13286655786 S I 2 3 0 2 N 沟道M O S F E T 1 2 5 W 2 5 V Si2302DS Vishay Siliconix ParameterSymbolTest ConditionsMinTypMaxUnit Static Drain Source Breakdown VoltageV BR DSSVGS 0 V ID 10 A20 V Gate Threshold VoltageVGS th VDS VGS ID 50 A 0 65 V Gate Body LeakageIGSSVDS 0 V VGS 8 V 100nA Zero Gate Voltage Drain CurrentIDSS VDS 20 V VGS 0 V1 AZero Gate Voltage Drain CurrentIDSS VDS 20 V VGS 0 V TJ 55 C10 A On State Drain CurrentaID on VDS 5 V VGS 4 5 V6 AOn State Drain CurrentaID on VDS 5 V VGS 2 5 V4 A Drain Source On ResistancearDS on VGS 4 5 V ID 3 6 A0 07 0 085 Drain Source On ResistancearDS on VGS 2 5 V ID 3 1 A0 085 0 115 Forward TransconductanceagfsVDS 5 V ID 3 6 A10S Diode Forward VoltageVSDIS 1 6 A VGS 0 V0 761 2V Dynamic Total Gate ChargeQg V10 V V4 5 V I3 6 A 5 410 CGate Source ChargeQgsVDS 10 V VGS 4 5 V ID 3 6 A0 65nC Gate Drain ChargeQgd1 60 Input CapacitanceCiss V10 V V0 V f1 MH 340 FOutput CapacitanceCossVDS 10 V VGS 0 V f 1 MHz115pF Reverse Transfer CapacitanceCrss33 Switching Turn On Delay Timetd on V10 V R5 5 1225 Rise Timetr VDD 10 V RL 5 5 I3 6 A V4 5 V R6 3660 ns Turn Off Delay Timetd off DD L ID 3 6 A VGEN 4 5 V RG 6 3460 ns Fall Timetf1025 Notes a Pulse test PW 300 s duty cycle 2 VNLR02 2 3 1597445168 0755 27529455 M P 13286655786 S I 2 3 0 2 N 沟道M O S F E T 1 2 5 W 2 5 V Si2302DS Vishay Siliconix 0 2 4 6 8 10 00 51 01 52 02 5 On Resistance vs Drain Current Output CharacteristicsTransfer Characteristics VDS Drain to Source Voltage V Drain Current A ID VGS Gate to Source Voltage V Drain Current A ID 0 2 4 6 8 10 012345 TC 125 C 55 C 0 0 5 1 V VGS 5 thru 2 5 V 1 5 V 2 V 0 200 400 600 800 1000 048121620 0 6 0 8 1 0 1 2 1 4 1 6 1 8 50050100150 0 1 2 3 4 5 01234567 0 0 03 0 06 0 09 0 12 0 15 0246810 Gate Charge Gate to Source Voltage V Qg Total Gate Charge nC VDS Drain to Source Voltage V C Capacitance pF VGS Crss Coss Ciss VDS 10 V ID 3 6 A On Resistance rDS on ID Drain Current A Capacitance On Resistance vs Junction Temperature VGS 4 5 V ID 3 6 A TJ Junction Temperature C Normalized On Resistance rDS on VGS 2 5 V VGS 4 5 V 25 C 2 4 1597445168 0755 27529455 M P 13286655786 S I 2 3 0 2 N 沟道M O S F E T 1 2 5 W 2 5 V Si2302DS Vishay Siliconix 0 20 40 60 81 01 2 Power W 0 4 0 3 0 2 0 1 0 0 0 1 0 2 50050100150 0 0 04 0 08 0 12 0 16 0 20 02468 Source Drain Diode Forward VoltageOn Resistance vs Gate to Source Voltage Threshold VoltageSingle Pulse Power Normalized Thermal Transient Impedance Junction to Ambient Square Wave Pulse Duration sec 2 1 0 1 0 01 10 410 310 210 11 Normalized Effective Transient Thermal Impedance 30 On Resistance rDS on VSD Source to Drain Voltage V VGS Gate to Source Voltage V Source Current A IS TJ Temperature C Variance V VGS th 0 2 0 1 0 05 0 02 Single Pulse Duty Cycle 0 5 ID 3 6 A ID 250 A 10 1 10 TJ 25 C TJ 150 C 0 010 101 0010 00 Time sec TC 25 C Single Pulse 14 12 8 4 0 2 6 10 2 5 1597445168 0755 27529455 M P 13286655786 S I 2 3 0 2 N 沟道M O S F E T 1 2 5 W 2 5 V 。
