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1、2N7002 MOSFET (N-Channel) FEATURES ? High density cell design for low RDS(ON) ? Voltage controlled small signal switch ? Rugged and reliable ? High saturation current capability Marking: 702 MAXIMUM RATINGS (Ta=25 unless otherwise noted) ELECTRICAL CHARACTERISTICS (Ta=25 unless otherwise specified)
2、ParameterSymbolTest conditions Min Typ Max Unit Drain-Source Breakdown Voltage V(BR)DSSVGS=0 V, ID=250 A60 Gate-Threshold Voltage Vth(GS) VDS=VGS, ID=250 A 12.5 V Gate-body Leakage lGSS VDS=0 V, VGS=20 V 80 nA Zero Gate Voltage Drain Current IDSS VDS=60 V, VGS=0 V 80 nA On-state Drain Current ID(ON)
3、 VGS=10 V, VDS=7 V 500 mA VGS=10 V, ID=500mA 7 Drain-Source On-Resistance RDS(on) VGS=5 V, ID=50mA 7 Forward Trans conductance gfs VDS=10 V, ID=200mA 80 ms VGS=10V, ID=500mA 0.53.75 V Drain-source on-voltage VDS(on) VGS=5V, ID=50mA 0.050.375 V Diode Forward Voltage VSD IS=115mA, VGS=0 V 0.551.2 V In
4、put Capacitance Ciss 50 Output Capacitance Coss 25 Reverse Transfer Capacitance Crss VDS=25V, VGS=0V, f=1MHz 5 pF SWITCHING TIME Turn-on Time td(on) 20 Turn-off Time td(off) VDD=25 V, RL=50 ID=500mA,VGEN=10 V RG=25 40 ns SOT-23 1. GATE 2. SOURCE 3. DRAIN * * * * * *These parameters have no way to ve
5、rify. , ParameterSymbolValueUnit Drain-Source Voltage VDS 60V Continuous Drain Current ID0.115A Power Dissipation PD0.225W Thermal Resistance from Junction to Ambient RJA556/W Junction Temperature TJ150 Storage Temperature Tstg-50 +150 Gate-Source Voltage VGS20 V 061218 0 2 4 6 0246810 0.0 0.2 0.4 0
6、.6 0.8 1.0 0.00.40.81.21.6 0.01 0.1 1 012345 0.0 0.2 0.4 0.6 0.8 1.0 0.00.20.40.60.81.0 0 2 4 6 8 ID=50mA ID=500mA IDRDS(ON) Ta=25 Pulsed VGSRDS(ON) ON-RESISTANCE RDS(ON) () GATE TO SOURCE VOLTAGE VGS (V) Ta=25 Pulsed Transfer Characteristics DRAIN CURRENT ID (A) GATE TO SOURCE VOLTAGE VGS (V) Ta=25
7、 Pulsed 0.3 0.03 VSDIS SOURCE CURRENT IS (A) SOURCE TO DRAIN VOLTAGE VSD(V) Ta=25 Pulsed 2N7002Typical Characteristics VGS=10V,9V,8V,7V,6V,5V VGS=2V VGS=4V VGS=3V Output Characteristics DRAIN CURRENT ID (A) DRAIN TO SOURCE VOLTAGE VDS (V) VGS=5V VGS=10V Ta=25 Pulsed ON-RESISTANCE RDS(ON) () DRAIN CURRENT ID (A) N
