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1、DRV8833 ZHCS016B JANUARY 2011REVISED AUGUST 2011 双通道 H 桥电机驱动器 查询样品: DRV8833 1特性PWM 绕组电流调节/限制 耐热性能增强型表面贴装式封装 2双通道 H 桥电流控制电机驱动器 能够驱动两个直流(DC) 电机或一个步进电机 应用 低 MOSFET 导通电阻 电池供电式玩具 HS + LS 360 m POS 打印机 每个 H 桥的输出电流为 1.5-A RMS、2APP （在 VM= 5V 和 25 条件下）视频安保摄像机 产品可以为 3-A RMS，办公自动化设备 4-A 平行峰顶 游戏机 宽电源电压范围： 机器人 2
2、.7V 至 10.8V 说明 DRV8833 为玩具、打印机及其他机电一体化应用提供了一款双通道桥式电机驱动器解决方案。 该器件具有两个 H 桥驱动器，并能够驱动两个直流 (DC) 电刷电机、一个双极性步进电机、螺线管或其他电感性负 载。 每个 H 桥的输出驱动器模块由 N 沟道功率 MOSFET 组成，这些 MOSFET 被配置成一个H桥，以驱动电机绕组。 每个 H 桥都包括用于调节或限制绕组电流的电路。 借助正确的 PCB 设计，DRV8833 的每个H桥能够连续提供高达 1.5-A RMS （或 DC） 的驱动电流（在 25 和采 用一个 5V VM 电源时）。每个 H 桥可支持高达 2
3、A 的峰值电流。 在较低的 VM 电压条件下，电流供应能力略有下 降。 该器件提供了利用一个故障输出引脚实现的内部关断功能，用于：过流保护、短路保护、欠压闭锁和过热。 另外， 还提供了一种低功耗睡眠模式。 DRV8833 内置于16 引脚HTSSOP 封装或采用 PowerPAD 的QFN 封装（绿色环保： RoHS 和无Sb / Br）。 订购信息(1) 可订购部件正面 封装(2) 号标记 2000 卷带式包装DRV8833PWPR PowerPAD (HTSSOP) - PWPDRV8833 Tube of 90DRV8833PWP 3000 卷带DRV8833RTYR PowerPAD
4、(QFN) - RTYDRV8833 卷盘 （ 250 片 ）DRV8833RTYT (1)如需了解最新的封装及订购信息，敬请查看本文档末的 “封装选项附录”，或查看 TI 网站 。 (2)封装图样、散热数据和符号可登录 获取。 1 Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of Texas Instruments semiconductor products and disclaimers ther
5、eto appears at the end of this data sheet. 2PowerPAD is a trademark of Texas Instruments. PRODUCTION DATA information is current as of publication date. Copyright 2011, Texas Instruments Incorporated Products conform to specifications per the terms of the Texas Instruments standard warranty. Product
6、ion processing does notEnglish Data Sheet: SLVSAR1 necessarily include testing of all parameters. Over- Temp AOUT1 GND AIN1 VM Logic AOUT2 VM Gate Drive similarly, the BIN1 and BIN2 input pins control the state of the BOUT1 and BOUT2 outputs. Table 2 shows the logic. Table 2. H-Bridge Logic xIN1xIN2
7、xOUT1xOUT2FUNCTION Coast/fast 00ZZ decay 01LHReverse 10HLForward Brake/slow 11LL decay The inputs can also be used for PWM control of the motor speed. When controlling a winding with PWM, when the drive current is interrupted, the inductive nature of the motor requires that the current must continue
8、 to flow. This is called recirculation current. To handle this recirculation current, the H-bridge can operate in two different states, fast decay or slow decay. In fast decay mode, the H-bridge is disabled and recirculation current flows through the body diodes; in slow decay, the motor winding is
9、shorted. To PWM using fast decay, the PWM signal is applied to one xIN pin while the other is held low; to use slow decay, one xIN pin is held high. Table 3. PWM Control of Motor Speed xIN1xIN2FUNCTION PWM0Forward PWM, fast decay 1PWMForward PWM, slow decay 0PWMReverse PWM, fast decay PWM1Reverse PW
10、M, slow decay 8Copyright 2011, Texas Instruments Incorporated xOUT1xOUT2 1 2 3 Forward drive Slow decay Fast decay VM 1 2 1 2 3 Reverse drive Slow decay Fast decay xOUT1xOUT2 3 VM 1 2 3 FORWARDREVERSE I= CHOP RISENSE 200 mV ? DRV8833 ZHCS016B JANUARY 2011REVISED AUGUST 2011 Figure 2 shows the curren
11、t paths in different drive and decay modes. Figure 2. Decay Modes Current Control The current through the motor windings may be limited, or controlled, by a fixed-frequency PWM current regulation, or current chopping. For DC motors, current control is used to limit the start-up and stall current of
12、the motor. For stepper motors, current control is often used at all times. When an H-bridge is enabled, current rises through the winding at a rate dependent on the DC voltage and inductance of the winding. If the current reaches the current chopping threshold, the bridge disables the current until
13、the beginning of the next PWM cycle. Note that immediately after the current is enabled, the voltage on the xISEN pin is ignored for a fixed period of time before enabling the current sense circuitry. This blanking time is fixed at 3.75 s. This blanking time also sets the minimum on time of the PWM
14、when operating in current chopping mode. The PWM chopping current is set by a comparator which compares the voltage across a current sense resistor connected to the xISEN pins with a reference voltage. The reference voltage is fixed at 200 mV. The chopping current is calculated in Equation 1. (1) Ex
15、ample: If a 1- sense resistor is used, the chopping current will be 200 mV/1 = 200 mA. Once the chopping current threshold is reached, the H-bridge switches to slow decay mode. Winding current is re-circulated by enabling both of the low-side FETs in the bridge. This state is held until the beginnin
16、g of the next fixed-frequency PWM cycle. Note that if current control is not needed, the xISEN pins should be connected directly to ground. Copyright 2011, Texas Instruments Incorporated9 DRV8833 ZHCS016B JANUARY 2011REVISED AUGUST nSLEEP Operation Driving nSLEEP low will put the device into a low power sleep state. In this state, the H-bridges are disabled, the gate drive charge pump
