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1、A,Apr,2011 JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors SS8550 TRANSISTOR (PNP) FEATURES High Collector Current Complementary to SS8050 MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage -40 V VCEO Colle
2、ctor-Emitter Voltage -25 V VEBO Emitter-Base Voltage -5 V IC Collector Current -1.5 A PC Collector Power Dissipation 300 mW RJA Thermal Resistance From Junction To Ambient 417 /W Tj Junction Temperature 150 Tstg Storage Temperature -55+150 ELECTRICAL CHARACTERISTICS (Ta=25 unless otherwise specified
3、) Parameter Symbol Test conditions Min Typ Max Unit Collector-base breakdown voltage V(BR)CBO IC=-100A, IE=0 -40 V Collector-emitter breakdown voltage V(BR)CEO IC=-0.1mA, IB=0 -25 V Emitter-base breakdown voltage V(BR)EBO IE=-100A, IC=0 -5 V Collector cut-off current ICBO VCB=-40V, IE=0 -100 nA Coll
4、ector cut-off current ICEO VCE=-20V, IB=0 -100 nA Emitter cut-off current IEBO VEB=-5V, IC=0 -100 nA hFE(1) VCE=-1V, IC=-100mA 120 400 DC current gain hFE(2) VCE=-1V, IC=-800mA 40 Collector-emitter saturation voltage VCE(sat) IC=-800mA, IB=-80mA -0.5 V Base-emitter saturation voltage VBE(sat) IC=-80
5、0mA, IB=-80mA -1.2 V Base-emitter voltage VBE VCE=-1V, IC=-10mA -1 V Transition frequency fT VCE=-10V,IC=-50mA , f=30MHz 100 MHz Collector output capacitance Cob VCB=-10V, IE=0, f=1MHz 20 pF CLASSIFICATION OF hFE(1) RANK L H J RANGE 120200 200350 300400 MARKING Y2 SOT23 1. BASE 2. EMITTER 3. COLLECT
6、OR 【南京南山半导体有限公司 长电贴片三极管选型资料【南京南山半导体有限公司 长电贴片三极管选型资料】 -200-300-400-500-600-700-800-900-1000 -0.1 -1 -10 -100 -1000 -0.0-0.5-1.0-1.5-2.0-2.5-3.0-3.5-4.0-4.5-5.0 -0 -20 -40 -60 -80 -100 -120 -140 -160 -180 -0.1-1-10-100-1000 -200 -300 -400 -500 -600 -700 -800 -900 -1000 -0.1-1-10-100-1000 10 100 -1-10
7、 1 -1-10-100-1000 -1 -10 -100 -1000 -1-10-100 10 100 0255075100125150 0 50 100 150 200 250 300 350 VCE=-1V Ta=25 Ta=100 oC ICVBE BASE-EMMITER VOLTAGE VBE (mV) COLLCETOR CURRENT IC (mA) 1mA 0.9mA 0.8mA 0.7mA 0.6mA 0.5mA 0.4mA 0.3mA 0.2mA IB=0.1mA Static Characteristic COLLECTOR CURRENT IC (mA) COLLEC
8、TOR-EMITTER VOLTAGE VCE (V) =10 Ta=25 Ta=100 BASE-EMITTER SATURATION VOLTAGE VBEsat (mV) COLLECTOR CURRENT IC (mA) ICVBEsat Ta=100 Ta=25 500 VCE=-1V DC CURRENT GAIN hFE COLLECTOR CURRENT IC (mA) IChFE Cob Cib 100 -0.2 f=1MHz IE=0/ IC=0 Ta=25 oC VCB/ VEBCob/ Cib CAPACITANCE C (pF) 20 REVERSE VOLTAGE
9、V (V) Ta=25 0.2 Ta=100 =10 COLLECTOR-EMITTER SATURATION VOLTAGE VCEsat (mV) COLLECTOR CURRENT IC (mA) ICVCEsat TRANSITION FREQUENCY fT (MHz) COLLECTOR CURRENT IC (mA) VCE-10V Ta=25 oC IC fT 500 SS8550Typical Characterisitics Pc Ta COLLECTOR POWER DISSIPATION Pc (mW) AMBIENT TEMPERATURE Ta () A,Apr,2
10、011 Min.Max.Min.Max. A0.9001.1500.0350.045 A10.0000.1000.0000.004 A20.9001.0500.0350.041 b0.3000.5000.0120.020 c0.0800.1500.0030.006 D2.8003.0000.1100.118 E1.2001.4000.0470.055 E12.2502.5500.0890.100 e e11.8002.0000.0710.079 L L10.3000.5000.0120.020 0808 0.550 REF.0.022 REF. Symbol Dimensions In Inc
11、hesDimensions In Millimeters 0.950 TYP.0.037 TYP. 【南京南山半导体有限公司 长电三极管选型资料【南京南山半导体有限公司 长电三极管选型资料】 The bottom gasket The top gasket 30001 PCS 300015 PCS Label on the Reel Label on the Inner Box Label on the Outer Box QA Label Seal the box with the tape Seal the box with the tape Stamp “EMPTY” on the empty box Inner Box: 210 mm 208 mm203 mmOuter Box: 440 mm 440 mm 230 mm
