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1、 JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors KTC3265 TRANSISTOR (NPN) FEATURES ? High DC current gain ? Complementary to KTA1298 MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage 35 V VCEO Collector-Em
2、itter Voltage 30 V VEBO Emitter-Base Voltage 5 V IC Collector Current -Continuous 800 mA PC Collector Power Dissipation 200 mW Tj Junction Temperature 150 Tstg Storage Temperature -55-150 ELECTRICAL CHARACTERISTICS (Ta=25 unless otherwise specified) Parameter Symbol Test conditions Min Typ Max Unit
3、Collector-base breakdown voltage V(BR)CBO IC= 100A, IE=0 35 V Collector-emitter breakdown voltage V(BR)CEO IC= 10mA, IB=0 30 V Emitter-base breakdown voltage V(BR)EBO IE=100A, IC=0 5 V Collector cut-off current ICBO VCB=30 V, IE=0 0.1 A Collector cut-off current IEBO VEB=5 V, IC=0 0.1 A DC current g
4、ain hFE VCE=1V, IC= 100mA 100 320 Collector-emitter saturation voltage VCE(sat) IC=500mA, IB=20mA 0.5 V base-emitter voltage VBE VCE=1V,IC=10mA 0.5 0.8 V Transition frequency fT VCE=5V, IC=10mA f=100MHz 120 MHz Collector output capacitance Cob VCB=10V,IE=0,f=1MHZ 13 pF CLASSIFICATION OF hFE Rank O Y
5、 Range 100-200 160-320 Marking EO EY SOT-23 1. BASE 2. EMITTER 3. COLLECTOR A,May,2011 【南京南山半导体有限公司 长电贴片三极管选型资料【南京南山半导体有限公司 长电贴片三极管选型资料】 110100 0 100 200 300 400 110100 10 100 0.1110 1 10100 200 400 0255075100125150 0 50 100 150 200 250 0.20.40.60.81.01.2 1 10 100 110100 0.0 0.4 0.8 1.2 0.00.51.01.
6、52.02.5 0 40 80 120 160 800 fT IC hFE COMMON EMITTER VCE=1V 303003 Ta=100 Ta=25 DC CURRENT GAIN hFE COLLECTOR CURRENT IC (mA) IC 30 300 303 COLLECTOR-EMITTER SATURATION VOLTAGE VCEsat (mV) COLLECTOR CURRENT IC (mA) =25 Ta=25 Ta=100 ICVCEsat 600 300 10 30 100 3 30.320 Cob Cib REVERSE VOLTAGE V (V) f=
7、1MHz IE=0/IC=0 Ta=25 VCB/ VEBCob/ Cib CAPACITANCE C (pF) 100 530 VCE=5V Ta=25 TRANSITION FREQUENCY fT (MHz) COLLECTOR CURRENT IC (mA) KTC3265Typical Characterisitics COLLECTOR POWER DISSIPATION PC (mW) AMBIENT TEMPERATURE Ta () PC Ta 800 800 VBEIC 300 30 3 Ta=25 Ta=100 COMMON EMITTER VCE=1V COLLECTO
8、R CURRENT IC (mA) BASE-EMMITER VOLTAGE VBE (V) 800303 =25 BASE-EMITTER SATURATION VOLTAGE VBEsat (V) COLLECTOR CURRENT IC (mA) Ta=25 Ta=100 300 ICVBEsat 500uA 450uA 400uA 350uA 300uA 250uA 200uA 150uA Static Characteristic COLLECTOR CURRENT IC (mA) COLLECTOR-EMITTER VOLTAGE VCE (V) 100uA IB=50uA COM
9、MON EMITTER Ta=25 A,May,2011 Min.Max.Min.Max. A0.9001.1500.0350.045 A10.0000.1000.0000.004 A20.9001.0500.0350.041 b0.3000.5000.0120.020 c0.0800.1500.0030.006 D2.8003.0000.1100.118 E1.2001.4000.0470.055 E12.2502.5500.0890.100 e e11.8002.0000.0710.079 L L10.3000.5000.0120.020 0808 0.550 REF.0.022 REF.
10、 Symbol Dimensions In InchesDimensions In Millimeters 0.950 TYP.0.037 TYP. 【南京南山半导体有限公司 长电三极管选型资料【南京南山半导体有限公司 长电三极管选型资料】 The bottom gasket The top gasket 30001 PCS 300015 PCS Label on the Reel Label on the Inner Box Label on the Outer Box QA Label Seal the box with the tape Seal the box with the tape Stamp “EMPTY” on the empty box Inner Box: 210 mm 208 mm203 mmOuter Box: 440 mm 440 mm 230 mm
