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1、Public Information 基于超结MOSFET、宽禁带(WBG)及模块的 HEV/EV车载充电器(OBC)及DC-DC方案 Charlie Wang October 2017 Public 2 10/23/2017 Technology Driven Capability Central PV* String PV* pile GaN SiC Silicon Remains Mainstream Technology 10M 1M 100k 10k 1k 1k 10k 100k 1M 10M * PV = photovoltaic inverter; * OBC = onboard
2、 charger fsw Hz Pout W SJ OBC* Silicon : 12V 1700V - Best FOM, Packaging Options Superjunction: 650V 900V - Optimized HV solution SiC: 900V 1200V - High power density performance GaN: 650V - High frequency performance Public 3 10/23/2017 SJ MOSFET 650V Technology Evolution 2004 2011 SJ MOSFET Genera
3、tion 2009 First Gen. SJ MOSFET Best-in-class body diode dv/dt 190m in TO-220, 70m in TO-247 SuperFET I (2004) 50% lower Qg than SF1 World 1st Trench Type 90m in TO-220, 36m in TO-247 Direct replace to SF1 Easy to design by a internal Rg 104m in TO-220, 41m in TO-247 Direct replace to SupreMOS For hi
4、gh efficiency SuperFET II (2012) Easy Drive SuperFET II Fast (2011) SupreMOS (2009) 2015 SuperFET II (2011) 41% lower Rsp than SF2 Direct replace to SF2 72mohm in D2pak 67m in TO-220/F, 25m in TO-247 Auto SuperFET III (2017) Easy Drive 2012 Performance (Efficiency) Design in ( EMI, Controllability )
5、 Low High Easy Hard SF2 FRFET SF3 Easy SF3 FRFET New Smaller Qrr and robust body diode For soft switching topologies Auto SuperFET II (2012) FRFET Auto SuperFET III (2018) FRFET 28m in TO-247 80m in D2pak 2017 2018 SuperFET series : Multi Epi Type SupreMOS : Trench Type New Public 4 10/23/2017 Fast/
6、Easy Drive/FRFET Comparison High efficiency Hard Switching Topologies Reduced Qg and Eoss Hard Switching Topologies Boost PFC,Full Bridge Phase Bidirectional Buck- Boost Semi Bridgeless PFC FAST Version Easy to drive with low gate oscillations. Low EMI and Voltage spikes Controlled lower Coss. Hard/
7、Soft Switching Topologies Boost PFC, Semi Bridgeless PFC, Phase Shift DC-DC Easy Drive Version Fast Body Diode Small Qrr and Trr Robust diode ruggedness Better reliability Soft switching resonant topologies like LLC, LCC, Dual Active Bridge DC-DC FRFET Version By minimized Crss ! By internal Rg ! By
8、 carrier life time control ! Public 5 10/23/2017 110 199 104 41 70 99 67 23 0 50 100 150 200 250 D2PAK Power88 TO-220 TO-247 Minimum Rds(on)(max) m SuperFET III vs. SuperFET II Higher power density Ideal for High Power OBC systems Less paralleling MOSFETs Less space requirements Less critical for la
9、yout interferences of paralleling devices Improved Rsp Blue: SuperFET III Red: SuperFET II Public 6 10/23/2017 Features, Benefits and Applications of SFIII 650V Features Lower RDS(ON) / Same Packages Lowest FOM RDS(ON) max. X Qg typ. Optimized Turn-ON Robust body diode 650V Benefits High Power Densi
10、ty Less paralleling MOSFET High System Efficiency High System Reliability Improved Safety Margin Applications OBC and HV DC-DC Automotive HEV-EV Public 7 10/23/2017 HV MOSFET Portfolio for OBC Systems SuperFET II and III Public 8 10/23/2017 Automotive HV MOSFETs PKG D2PAK TOLL HV TO-247 TO-247-4L RD
11、S(on) 25m NVH025N65S3 (Samples Available) 28m NVHL028N65S3F (Samples Q4,2017) 40m NVHL040N65S3F (Samples Q4,2017) 72m NVBL072N65S3 (Samples Q1,2018) NVH072N65S3 (Samples Available) 82m NVB082N65S3F (Samples Available) NVBL082N65S3F (Samples Q1,2018) NVHL082N65S3F (Samples Q1,2018) 110m NVB110N65S3F
12、(Samples Q4,2017) NVBL110N65S3F (Samples Q2,2018) NVHL110N65S3F (Samples Q1,2018) 150m NVB150N65S3F (Samples Q1,2018) NVBL150N65S3F (Samples Q2,2018) March,2018 April,2018 May,2018 October ,2018 December ,2018 Feb ,2019 March ,2019 October ,2017 April ,2018 May ,2018 November ,2017 June ,2018 August
13、 ,2018 Public 9 10/23/2017 New Package for Fast Switching Applications Package Outline TOLL Standard Package Public 10 10/23/2017 TOLL Package with Kelvin Sense Existing package with no Kelvin Sense Source Wire of 5mil Reference Die Information for HV SF2 attached Public 11 10/23/2017 TO-Leadless Pa
14、ckage -Automotive released portfolio from 40V to 150 -Automotive Development for 650V HV MOSFETs -Very high current capability up to 300A - Smaller footprint than D2PAK -9.8x11.7 mm vs 10.2x15.2 mm 30% less board space * OBC = onboard charger fsw Hz Pout W SJ OBC* Silicon : 12V 1700V - Best FOM, Pac
15、kaging Options Superjunction: 650V 900V - Optimized HV solution SiC: 900V 1200V - High power density performance GaN: 650V - High frequency performance Public 20 10/23/2017 Introduction to WBG Public 21 10/23/2017 Material Symbo l Bandgap Energy (eV) Geranium Ge 0.7 Silicon Si 1.1 Gallium Arsenide GaAs 1.4 Silicon Carbide SiC 3.3 Zinc Oxide ZnO 3.4 Gallium Nitride GaN 3.4 Diamond C 5.5 Wide band gap Bandgap = Energy required to move an electron from its outer shell, so it can move freely inside the material Silicon Carbide compared to Silicon -10x higher dielectric breakdown field streng
