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1、TITLE TMA MEDICI Example 1 - 1.5 Micron N-Channel MOSFET COMMENT Specify a rectangular mesh MESH SMOOTH=1 X.MESH WIDTH=3.0 H1=0.125 Y.MESH N=1 L=-0.025 Y.MESH N=3 L=0. Y.MESH DEPTH=1.0 H1=0.125 Y.MESH DEPTH=1.0 H1=0.250 COMMENT Eliminate some unnecessary substrate nodes ELIMIN COLUMNS Y.MIN=1.1,COMM
2、ENT Specify oxide and silicon regions REGION SILICON REGION OXIDE IY.MAX=3 COMMENT Electrode definition ELECTR NAME=Gate X.MIN=0.625 X.MAX=2.375 TOP ELECTR NAME=Substrate BOTTOM ELECTR NAME=Source X.MAX=0.5 IY.MAX=3 ELECTR NAME=Drain X.MIN=2.5 IY.MAX=3,COMMENT Specify impurity profiles and fixed cha
3、rge PROFILE P-TYPE N.PEAK=3E15 UNIFORM OUT.FILE=mesh1 PROFILE P-TYPE N.PEAK=2E16 Y.CHAR=.25 PROFILE N-TYPE N.PEAK=2E20 Y.JUNC=.34 X.MIN=0.0 WIDTH=.5 +XY.RAT=.75 PROFILE N-TYPE N.PEAK=2E20 Y.JUNC=.34 X.MIN=2.5 WIDTH=.5 +XY.RAT=.75 INTERFAC QF=1E10 PLOT.2D GRID TITLE=“Example 1 - Initial Grid“ FILL SC
4、ALE COMMENT Regrid on doping REGRID DOPING LOG IGNORE=OXIDE RATIO=2 SMOOTH=1 +IN.FILE=mesh1 PLOT.2D GRID TITLE=“Example 1 - Doping Regrid“ FILL SCALE,COMMENT Specify contact parameters CONTACT NAME=Gate N.POLY COMMENT Specify physical models to use MODELS CONMOB FLDMOB SRFMOB2 COMMENT Symbolic facto
5、rization, solve, regrid on potential SYMB CARRIERS=0 METHOD ICCG DAMPED SOLVE REGRID POTEN IGNORE=OXIDE RATIO=.2 MAX=1 SMOOTH=1 + IN.FILE=mesh1 + OUT.FILE=mesh2 PLOT.2D GRID TITLE=“Example 1 - Potential Regrid“ FILL SCALE PLOT.3D DOPING TITLE=“Example 1 - doping“ PLOT.3D ELEC TITLE=“Example 1 - n re
6、gion profile“ PLOT.3D HOLE TITLE=“Example 1 - p region profile“,COMMENT Solve using the refined grid, save solution for later use SYMB CARRIERS=0 SOLVE OUT.FILE=sol COMMENT Impurity profile plots PLOT.1D DOPING X.START=.25 X.END=.25 Y.START=0 Y.END=2 + Y.LOG POINTS BOT=1E15 TOP=1E21 COLOR=2 + TITLE=
7、“Example 1 - Source Impurity Profile“ PLOT.1D DOPING X.START=1.5 X.END=1.5 Y.START=0 Y.END=2 + Y.LOG POINTS BOT=1E15 TOP=1E17 COLOR=2 + TITLE=“Example 1 - Gate Impurity Profile“ PLOT.2D BOUND TITLE=“Example 1 - Impurity Contours“ FILL SCALE CONTOUR DOPING LOG MIN=16 MAX=20 DEL=.5 COLOR=2 CONTOUR DOP
8、ING LOG MIN=-16 MAX=-15 DEL=.5 COLOR=1 LINE=2,MESH SMOOTH=1 X.MESH WIDTH=3.0 H1=0.125 Y.MESH N=1 L=-0.025 Y.MESH N=3 L=0. Y.MESH DEPTH=1.0 H1=0.125 Y.MESH DEPTH=1.0 H1=0.250 ELIMIN COLUMNS Y.MIN=1.1,-0.025,0,REGION SILICON REGION OXIDE IY.MAX=3 COMMENT Electrode definition ELECTR NAME=Gate X.MIN=0.6
9、25 X.MAX=2.375 TOP ELECTR NAME=Bulk BOTTOM ELECTR NAME=Source X.MAX=0.5 IY.MAX=3 ELECTR NAME=Drain X.MIN=2.5 IY.MAX=3,PLOT.2D GRID TITLE=“Example 1 - Doping Regrid“ FILL SCALE,PLOT.2D GRID TITLE=“Example 1 - Potential Regrid“ FILL SCALE,PLOT.3D DOPING TITLE=“Example 1 - doping“,PLOT.3D ELEC TITLE=“E
10、xample 1 - n region profile“,PLOT.3D HOLE TITLE=“Example 1 - p region profile“,PLOT.1D DOPING X.START=.25 X.END=.25 Y.START=0 Y.END=2,PLOT.1D DOPING X.START=1.5 X.END=1.5 Y.START=0 Y.END=2,PLOT.2D BOUND TITLE=“Example 1 - Impurity Contours“ FILL SCALE CONTOUR DOPING LOG MIN=16 MAX=20 DEL=.5 COLOR=2 CONTOUR DOPING LOG MIN=-16 MAX=-15 DEL=.5 COLOR=1 LINE=2,PROFILE P-TYPE N.PEAK=2E16 Y.CHAR=.25,
