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1、Ion Implanter Introduction,Diffusion VS Implantation,What is Ion Implant,For impurity dope control in fabrication of silicon circuit or device Precisely control impurity doping and profile Low Temperature Operation Other,Implant Profile and Active,Implant Profile,Implant and Active,氣體的平均自由動徑,氣體的平均自由
2、動徑()定義為平均一個粒子在碰撞其他粒子前所走的距離。 = 2.33 x 10-20 T / Pd02 (cm) (d0：分子直徑) 在室溫時，平均自由徑與壓力間關係 = 5 x 10-3 / P (cm) ( p：torr)以25C之空氣，在10-3 torr條件下 = 5 x 10-3 / 1x10-3 = 5 (cm),System Overview,Ion source Extraction Region Analyzing Magnet Region Quadrapole and Beam Focus Scan System Beam Monitor and Dosimeter Ne
3、utralizing System,System,Species,P+ dopantB: Boron (B2H6, BF3)In: Indium (InCl, InO3) N+ dopantP: Phosphorus (PH3, P2O5)As: Arsenic (AsH3, As2O3) OthersSi: Silicon (SiH4)Ge: Germanium(GeH4),Ion Source,DC DischargeFreeman typeBernas typeBucket type RF DischargeICP,Freeman type,Ion Source -Parameters,
4、Gas Flow- high gas flow resulting in high arcing rate, high condensation rate ,high cost and poor vacuum. Arc Voltage -the electrons energy to ionize atom and the energy the positive ion impact the filament. Higher arc voltage , higher beam I and short source lifetime . Filament - Source Magnet-,Ber
5、nas type,Bernas type - picture,Bucket type,RP ICP Type,BF3 Ionization Species,PH3 Ionization Species,RF Ionization Species,B2H6BHx+B2Hx+Hx+ (main B2Hx+) PH3PHx+P2Hx+Hx+ (main PHx+) P2Hx/PHx 10%,Extraction Region,Extraction Region II,Electrical Field,Beam Current,Analyzing Magnet Region,Mass Resoluti
6、on,Beam Quality,Mass Resolution X: M/M10 Y: M/M2 BP cross contamination X:PM(31),range29.4,32.6BM(11),range10.4,12.6 Y:PM(31),range23.3,37.7BM(11),range7.75,14.25BF+ P+,Quadrapole and Beam Focus,Focus & Uniformity Control,Scan System I,Vertical,Scan System II,Horizontal,Scan system III,Steep Slope,B
7、eam Monitor,Dosimeter,Neutralizing System,Space Charge Neutralization,Process Concept,Hot Carrier Effect Channel Effect Charging Effect Pressure and Out gassing Cooling,Hot carrier Effect,Hot carrier effects are more severe in n-channel transistors due to the higher impact ionization rate of electro
8、ns vs. holes,Hot Carrier Effect Solution,LDD (Light Doped Drain) 2. Lower Vds,Channel Effect,channel effect can results in poor doping profile and depth control,as well as junction depth shift,Channel Effect Solution,Disorient the beam direction to all crystal axes,Implant through an amorphous oxide
9、 layer,Predamage on the crystal surface,Charging Effect,Substrate charge,Pressure and out gassing,poor vacuum can results in charge neutralization as well as overdose and energy contamination,Cooling,Beam Power = beam I (mA) * beam energy (kV)= the heat from beam transfer to wafer,Safety,X-ray Gas H
10、igh Voltage Phosphorus,X-Ray,Dont against the cover Distant from Ion source Area,High Voltage,Avoid Bypass Interlock Use Ground Bar,Gas,BF3: Process Gas PH3: Process Gas H2: Dilute and Clean Gas Ar: Clean Gas,SDS,SDS2 Adsorbent,Gas Supplied System,SDS Gas Source Technology,Adsorption Characteristics,Safety-Release Rate Test,High Pressure v. Safe Delivery,Phosphorus,Water, H2O2+H2O Aluminum Foil Zipper bag Chemical Solution HNO3 or KOH + H2O +H2O2,
